MW7IC2240NBR1 vs MW6IC2240NBR1 Vergleich
Detaillierter Direktvergleich von MW7IC2240NBR1 von NXP Semiconductors und MW6IC2240NBR1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MW6IC2240NBR1 - 2.11-2.17 GHz 4.5W RF LDMOS Amplifier | NXP
MW6IC2240NBR1 ObsoleteSpezifikationsvergleich
| Parameter | MW7IC2240NBR1 | MW6IC2240NBR1 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | RF Amplifiers | RF Amplifiers |
| Lebenszyklusstatus | Obsolete | Obsolete |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $29,00 | $19,80 |
| Frequency Range | 2110 MHz to 2170 MHz (usable 2000-2200 MHz) | 2110 MHz to 2170 MHz |
| Modulation / RF Type | W-CDMA (also TD-SCDMA, LTE) | — |
| Output Power (Average) | 4 W Avg. @ 2112.5 MHz, single-carrier W-CDMA | — |
| Supply Voltage (VDD) | 28 V (rated 24 V to 32 V operation) | — |
| Quiescent Current Stage 1 (IDQ1) | 90 mA | 300 mA |
| Quiescent Current Stage 2 (IDQ2) | 420 mA | 320 mA |
| Minimum Gain | 15 dB (typical 30 dB) | — |
| Input VSWR | 5:1 | — |
| Output VSWR | 5:1 | — |
| Nominal Impedance | 50 ohm (on-chip matched) | — |
| P1dB (Output) | 46 dBm (per distributor listing) | — |
| Technology | RF LDMOS (multi-stage integrated) | RF LDMOS (Laterally Diffused MOSFET) |
| Gehäuse | TO-272 WB-16 (over-molded plastic, 16-lead) | TO-272 WB-16 (over-molded plastic, 16-lead wideband) |
| Montageart | Surface Mount | — |
| Terminal Finish | Matte Tin (Sn) | — |
| Package Body Material | Plastic / Epoxy | — |
| Operating Mode | 100% PAR tested for W-CDMA-like signals | — |
| RoHS-Status | [DATA_NEEDED: RoHS compliance] | Compliant |
| RF Type | — | Cellular, W-CDMA, TD-SCDMA driver amplifier |
| Supply Voltage (Operating) | — | 26 V to 32 V (typical 28 V) |
| Average Output Power (2-carrier W-CDMA) | — | 4.5 W (typ) |
| Power Gain | — | 29 dB (typ, 2-carrier W-CDMA, Pout = 25 dBm) |
| Drain Current (operating, Pout=25 dBm avg) | — | 210 mA (typ) |
| IM3 (10 MHz offset, 2-carrier W-CDMA) | — | -59 dBc (typ) |
| ACPR (5 MHz offset, 2-carrier W-CDMA) | — | -62 dBc (typ) |
| VSWR Tolerance | — | 3:1 at 28 Vdc, 2170 MHz, 20 W CW |
| Number of Stages | — | 2 (cascaded, integrated) |
| Input / Output Matching | — | On-chip, 50 ohm single-ended |
| Operating Case Temperature | — | [DATA_NEEDED: operating case temperature range] |