MW7IC2240NBR1 vs MW6IC2240NBR1 Comparaison
Comparaison détaillée côte à côte de MW7IC2240NBR1 par NXP Semiconductors et MW6IC2240NBR1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MW6IC2240NBR1 - 2.11-2.17 GHz 4.5W RF LDMOS Amplifier | NXP
MW6IC2240NBR1 ObsoleteComparaison des spécifications
| Paramètre | MW7IC2240NBR1 | MW6IC2240NBR1 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | RF Amplifiers | RF Amplifiers |
| Statut du cycle de vie | Obsolete | Obsolete |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $29,00 | $19,80 |
| Frequency Range | 2110 MHz to 2170 MHz (usable 2000-2200 MHz) | 2110 MHz to 2170 MHz |
| Modulation / RF Type | W-CDMA (also TD-SCDMA, LTE) | — |
| Output Power (Average) | 4 W Avg. @ 2112.5 MHz, single-carrier W-CDMA | — |
| Supply Voltage (VDD) | 28 V (rated 24 V to 32 V operation) | — |
| Quiescent Current Stage 1 (IDQ1) | 90 mA | 300 mA |
| Quiescent Current Stage 2 (IDQ2) | 420 mA | 320 mA |
| Minimum Gain | 15 dB (typical 30 dB) | — |
| Input VSWR | 5:1 | — |
| Output VSWR | 5:1 | — |
| Nominal Impedance | 50 ohm (on-chip matched) | — |
| P1dB (Output) | 46 dBm (per distributor listing) | — |
| Technology | RF LDMOS (multi-stage integrated) | RF LDMOS (Laterally Diffused MOSFET) |
| Boîtier | TO-272 WB-16 (over-molded plastic, 16-lead) | TO-272 WB-16 (over-molded plastic, 16-lead wideband) |
| Type de montage | Surface Mount | — |
| Terminal Finish | Matte Tin (Sn) | — |
| Package Body Material | Plastic / Epoxy | — |
| Operating Mode | 100% PAR tested for W-CDMA-like signals | — |
| Statut RoHS | [DATA_NEEDED: RoHS compliance] | Compliant |
| RF Type | — | Cellular, W-CDMA, TD-SCDMA driver amplifier |
| Supply Voltage (Operating) | — | 26 V to 32 V (typical 28 V) |
| Average Output Power (2-carrier W-CDMA) | — | 4.5 W (typ) |
| Power Gain | — | 29 dB (typ, 2-carrier W-CDMA, Pout = 25 dBm) |
| Drain Current (operating, Pout=25 dBm avg) | — | 210 mA (typ) |
| IM3 (10 MHz offset, 2-carrier W-CDMA) | — | -59 dBc (typ) |
| ACPR (5 MHz offset, 2-carrier W-CDMA) | — | -62 dBc (typ) |
| VSWR Tolerance | — | 3:1 at 28 Vdc, 2170 MHz, 20 W CW |
| Number of Stages | — | 2 (cascaded, integrated) |
| Input / Output Matching | — | On-chip, 50 ohm single-ended |
| Operating Case Temperature | — | [DATA_NEEDED: operating case temperature range] |