MW7IC2240NBR1 vs MW6IC2240NBR1 Сравнение

Подробное сравнение бок о бок MW7IC2240NBR1 от NXP Semiconductors и MW6IC2240NBR1 от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.

NXP Semiconductors
MW7IC2240NBR1 MW7IC2240NBR1 - 4W W-CDMA RF LDMOS Power Amplifier | NXP

MW7IC2240NBR1 - 4W W-CDMA RF LDMOS Power Amplifier | NXP

MW7IC2240NBR1 Obsolete
NXP Semiconductors
MW6IC2240NBR1 MW6IC2240NBR1 - 2.11-2.17 GHz 4.5W RF LDMOS Amplifier | NXP

MW6IC2240NBR1 - 2.11-2.17 GHz 4.5W RF LDMOS Amplifier | NXP

MW6IC2240NBR1 Obsolete

Сравнение характеристик

Параметр MW7IC2240NBR1 MW6IC2240NBR1
Бренд NXP Semiconductors NXP Semiconductors
Категория RF Amplifiers RF Amplifiers
Статус жизненного цикла Obsolete Obsolete
Наличие In Stock In Stock
Цена за единицу (USD) $29,00 $19,80
Frequency Range 2110 MHz to 2170 MHz (usable 2000-2200 MHz) 2110 MHz to 2170 MHz
Modulation / RF Type W-CDMA (also TD-SCDMA, LTE) —
Output Power (Average) 4 W Avg. @ 2112.5 MHz, single-carrier W-CDMA —
Supply Voltage (VDD) 28 V (rated 24 V to 32 V operation) —
Quiescent Current Stage 1 (IDQ1) 90 mA 300 mA
Quiescent Current Stage 2 (IDQ2) 420 mA 320 mA
Minimum Gain 15 dB (typical 30 dB) —
Input VSWR 5:1 —
Output VSWR 5:1 —
Nominal Impedance 50 ohm (on-chip matched) —
P1dB (Output) 46 dBm (per distributor listing) —
Technology RF LDMOS (multi-stage integrated) RF LDMOS (Laterally Diffused MOSFET)
Корпус TO-272 WB-16 (over-molded plastic, 16-lead) TO-272 WB-16 (over-molded plastic, 16-lead wideband)
Тип монтажа Surface Mount —
Terminal Finish Matte Tin (Sn) —
Package Body Material Plastic / Epoxy —
Operating Mode 100% PAR tested for W-CDMA-like signals —
Статус RoHS [DATA_NEEDED: RoHS compliance] Compliant
RF Type — Cellular, W-CDMA, TD-SCDMA driver amplifier
Supply Voltage (Operating) — 26 V to 32 V (typical 28 V)
Average Output Power (2-carrier W-CDMA) — 4.5 W (typ)
Power Gain — 29 dB (typ, 2-carrier W-CDMA, Pout = 25 dBm)
Drain Current (operating, Pout=25 dBm avg) — 210 mA (typ)
IM3 (10 MHz offset, 2-carrier W-CDMA) — -59 dBc (typ)
ACPR (5 MHz offset, 2-carrier W-CDMA) — -62 dBc (typ)
VSWR Tolerance — 3:1 at 28 Vdc, 2170 MHz, 20 W CW
Number of Stages — 2 (cascaded, integrated)
Input / Output Matching — On-chip, 50 ohm single-ended
Operating Case Temperature — [DATA_NEEDED: operating case temperature range]

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