MW7IC2240NBR1 vs MW6IC2240NBR1 Comparación
Comparación detallada lado a lado de MW7IC2240NBR1 por NXP Semiconductors y MW6IC2240NBR1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MW6IC2240NBR1 - 2.11-2.17 GHz 4.5W RF LDMOS Amplifier | NXP
MW6IC2240NBR1 ObsoleteComparación de especificaciones
| Parámetro | MW7IC2240NBR1 | MW6IC2240NBR1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | RF Amplifiers | RF Amplifiers |
| Estado del ciclo de vida | Obsolete | Obsolete |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $29,00 | $19,80 |
| Frequency Range | 2110 MHz to 2170 MHz (usable 2000-2200 MHz) | 2110 MHz to 2170 MHz |
| Modulation / RF Type | W-CDMA (also TD-SCDMA, LTE) | — |
| Output Power (Average) | 4 W Avg. @ 2112.5 MHz, single-carrier W-CDMA | — |
| Supply Voltage (VDD) | 28 V (rated 24 V to 32 V operation) | — |
| Quiescent Current Stage 1 (IDQ1) | 90 mA | 300 mA |
| Quiescent Current Stage 2 (IDQ2) | 420 mA | 320 mA |
| Minimum Gain | 15 dB (typical 30 dB) | — |
| Input VSWR | 5:1 | — |
| Output VSWR | 5:1 | — |
| Nominal Impedance | 50 ohm (on-chip matched) | — |
| P1dB (Output) | 46 dBm (per distributor listing) | — |
| Technology | RF LDMOS (multi-stage integrated) | RF LDMOS (Laterally Diffused MOSFET) |
| Encapsulado | TO-272 WB-16 (over-molded plastic, 16-lead) | TO-272 WB-16 (over-molded plastic, 16-lead wideband) |
| Tipo de montaje | Surface Mount | — |
| Terminal Finish | Matte Tin (Sn) | — |
| Package Body Material | Plastic / Epoxy | — |
| Operating Mode | 100% PAR tested for W-CDMA-like signals | — |
| Estado RoHS | [DATA_NEEDED: RoHS compliance] | Compliant |
| RF Type | — | Cellular, W-CDMA, TD-SCDMA driver amplifier |
| Supply Voltage (Operating) | — | 26 V to 32 V (typical 28 V) |
| Average Output Power (2-carrier W-CDMA) | — | 4.5 W (typ) |
| Power Gain | — | 29 dB (typ, 2-carrier W-CDMA, Pout = 25 dBm) |
| Drain Current (operating, Pout=25 dBm avg) | — | 210 mA (typ) |
| IM3 (10 MHz offset, 2-carrier W-CDMA) | — | -59 dBc (typ) |
| ACPR (5 MHz offset, 2-carrier W-CDMA) | — | -62 dBc (typ) |
| VSWR Tolerance | — | 3:1 at 28 Vdc, 2170 MHz, 20 W CW |
| Number of Stages | — | 2 (cascaded, integrated) |
| Input / Output Matching | — | On-chip, 50 ohm single-ended |
| Operating Case Temperature | — | [DATA_NEEDED: operating case temperature range] |