MW7IC2240NBR1 vs MW6IC2240NBR1 비교

다음의 상세 나란히 비교: MW7IC2240NBR1 제조: NXP Semiconductors 및 MW6IC2240NBR1 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

NXP Semiconductors
MW7IC2240NBR1 MW7IC2240NBR1 - 4W W-CDMA RF LDMOS Power Amplifier | NXP

MW7IC2240NBR1 - 4W W-CDMA RF LDMOS Power Amplifier | NXP

MW7IC2240NBR1 Obsolete
NXP Semiconductors
MW6IC2240NBR1 MW6IC2240NBR1 - 2.11-2.17 GHz 4.5W RF LDMOS Amplifier | NXP

MW6IC2240NBR1 - 2.11-2.17 GHz 4.5W RF LDMOS Amplifier | NXP

MW6IC2240NBR1 Obsolete

사양 비교

파라미터 MW7IC2240NBR1 MW6IC2240NBR1
브랜드 NXP Semiconductors NXP Semiconductors
카테고리 RF Amplifiers RF Amplifiers
수명 주기 상태 Obsolete Obsolete
재고 상태 In Stock In Stock
단가 (USD) $29.00 $19.80
Frequency Range 2110 MHz to 2170 MHz (usable 2000-2200 MHz) 2110 MHz to 2170 MHz
Modulation / RF Type W-CDMA (also TD-SCDMA, LTE) —
Output Power (Average) 4 W Avg. @ 2112.5 MHz, single-carrier W-CDMA —
Supply Voltage (VDD) 28 V (rated 24 V to 32 V operation) —
Quiescent Current Stage 1 (IDQ1) 90 mA 300 mA
Quiescent Current Stage 2 (IDQ2) 420 mA 320 mA
Minimum Gain 15 dB (typical 30 dB) —
Input VSWR 5:1 —
Output VSWR 5:1 —
Nominal Impedance 50 ohm (on-chip matched) —
P1dB (Output) 46 dBm (per distributor listing) —
Technology RF LDMOS (multi-stage integrated) RF LDMOS (Laterally Diffused MOSFET)
패키지 TO-272 WB-16 (over-molded plastic, 16-lead) TO-272 WB-16 (over-molded plastic, 16-lead wideband)
실장 유형 Surface Mount —
Terminal Finish Matte Tin (Sn) —
Package Body Material Plastic / Epoxy —
Operating Mode 100% PAR tested for W-CDMA-like signals —
RoHS 상태 [DATA_NEEDED: RoHS compliance] Compliant
RF Type — Cellular, W-CDMA, TD-SCDMA driver amplifier
Supply Voltage (Operating) — 26 V to 32 V (typical 28 V)
Average Output Power (2-carrier W-CDMA) — 4.5 W (typ)
Power Gain — 29 dB (typ, 2-carrier W-CDMA, Pout = 25 dBm)
Drain Current (operating, Pout=25 dBm avg) — 210 mA (typ)
IM3 (10 MHz offset, 2-carrier W-CDMA) — -59 dBc (typ)
ACPR (5 MHz offset, 2-carrier W-CDMA) — -62 dBc (typ)
VSWR Tolerance — 3:1 at 28 Vdc, 2170 MHz, 20 W CW
Number of Stages — 2 (cascaded, integrated)
Input / Output Matching — On-chip, 50 ohm single-ended
Operating Case Temperature — [DATA_NEEDED: operating case temperature range]

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