P82B715TD vs P82B715DR Vergleich
Detaillierter Direktvergleich von P82B715TD von NXP Semiconductors und P82B715DR von Texas Instruments. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | P82B715TD | P82B715DR |
|---|---|---|
| Marke | NXP Semiconductors | Texas Instruments |
| Kategorie | Interface ICs | Interface ICs |
| Lebenszyklusstatus | Unknown | Aktiv |
| Product Type | 2-bit bidirectional I2C-bus and SMBus extender | 2-bit bidirectional I2C/SMBus buffer and cable extender |
| Manufacturer | NXP Semiconductors | — |
| Supply Voltage Range | 3 V to 12 V | — |
| Maximum Bus Frequency | 400 kHz | 400 kHz |
| Buffered Channels | 2 channels: SCL and SDA | — |
| Bus Direction | Bidirectional | — |
| Supported Bus | I2C-bus and derivative SMBus systems | — |
| Process Technology | Bipolar integrated circuit | — |
| Package Type | SO8 plastic small-outline package | — |
| Lead Count | 8 leads | — |
| Lead Pitch | 1.27 mm | — |
| Package Body Length | 4.9 mm | — |
| Package Body Width | 3.9 mm | — |
| Package Body Height | 1.75 mm | — |
| Montageart | Surface mount | Surface mount |
| Internal Bus Resistance | 30 ohm | — |
| Enable Control | Enable pins present | — |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature range] | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant |
| REACH Status | [DATA_NEEDED: REACH status] | — |
| AEC-Q100 Qualification | [DATA_NEEDED: AEC-Q100 qualification] | — |
| Maximum Bus Capacitance | [DATA_NEEDED: maximum bus capacitance] | — |
| Ruhestrom | [DATA_NEEDED: quiescent current] | — |
| Operating Supply Voltage Range | — | 3 V to 12 V |
| Bidirectional Channels | — | 2 channels |
| Bus Wiring Capacitance | — | 3 nF |
| Main-Bus Capacitance | — | 400 pF conventional I2C specification limit |
| Versorgungsstrom | — | 22 mA |
| Delay Time | — | 250 ns |
| Eingangskapazität | — | 3000 pF |
| Gehäuse | — | 8-SOIC, 0.154 inch body width, 3.90 mm width |
| Betriebstemperatur | — | -40 C to +85 C |
| Architecture | — | Bipolar IC with unidirectional analog current amplification |
| Driver Compatibility | — | Compatible with TTL-level drivers |
| ESD Robustness | — | +/-2500 V HBM |
| Latch-Up Immunity | — | Greater than 100 mA |
| MSL | — | MSL Level-1-260C-UNLIM |