P82B715TD vs P82B715DR Comparación
Comparación detallada lado a lado de P82B715TD por NXP Semiconductors y P82B715DR por Texas Instruments. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | P82B715TD | P82B715DR |
|---|---|---|
| Marca | NXP Semiconductors | Texas Instruments |
| Categoría | Interface ICs | Interface ICs |
| Estado del ciclo de vida | Unknown | Activo |
| Product Type | 2-bit bidirectional I2C-bus and SMBus extender | 2-bit bidirectional I2C/SMBus buffer and cable extender |
| Manufacturer | NXP Semiconductors | — |
| Supply Voltage Range | 3 V to 12 V | — |
| Maximum Bus Frequency | 400 kHz | 400 kHz |
| Buffered Channels | 2 channels: SCL and SDA | — |
| Bus Direction | Bidirectional | — |
| Supported Bus | I2C-bus and derivative SMBus systems | — |
| Process Technology | Bipolar integrated circuit | — |
| Package Type | SO8 plastic small-outline package | — |
| Lead Count | 8 leads | — |
| Lead Pitch | 1.27 mm | — |
| Package Body Length | 4.9 mm | — |
| Package Body Width | 3.9 mm | — |
| Package Body Height | 1.75 mm | — |
| Tipo de montaje | Surface mount | Surface mount |
| Internal Bus Resistance | 30 ohm | — |
| Enable Control | Enable pins present | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| REACH Status | [DATA_NEEDED: REACH status] | — |
| AEC-Q100 Qualification | [DATA_NEEDED: AEC-Q100 qualification] | — |
| Maximum Bus Capacitance | [DATA_NEEDED: maximum bus capacitance] | — |
| Corriente en reposo | [DATA_NEEDED: quiescent current] | — |
| Operating Supply Voltage Range | — | 3 V to 12 V |
| Bidirectional Channels | — | 2 channels |
| Bus Wiring Capacitance | — | 3 nF |
| Main-Bus Capacitance | — | 400 pF conventional I2C specification limit |
| Corriente de alimentación | — | 22 mA |
| Delay Time | — | 250 ns |
| Capacitancia de entrada | — | 3000 pF |
| Encapsulado | — | 8-SOIC, 0.154 inch body width, 3.90 mm width |
| Temperatura de funcionamiento | — | -40 C to +85 C |
| Architecture | — | Bipolar IC with unidirectional analog current amplification |
| Driver Compatibility | — | Compatible with TTL-level drivers |
| ESD Robustness | — | +/-2500 V HBM |
| Latch-Up Immunity | — | Greater than 100 mA |
| MSL | — | MSL Level-1-260C-UNLIM |