P82B715TD vs P82B715DR तुलना
विस्तृत दोनों ओर की तुलना P82B715TD द्वारा NXP Semiconductors और P82B715DR द्वारा Texas Instruments. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | P82B715TD | P82B715DR |
|---|---|---|
| ब्रांड | NXP Semiconductors | Texas Instruments |
| श्रेणी | Interface ICs | Interface ICs |
| लाइफसाइकिल स्थिति | Unknown | सक्रिय |
| Product Type | 2-bit bidirectional I2C-bus and SMBus extender | 2-bit bidirectional I2C/SMBus buffer and cable extender |
| Manufacturer | NXP Semiconductors | — |
| Supply Voltage Range | 3 V to 12 V | — |
| Maximum Bus Frequency | 400 kHz | 400 kHz |
| Buffered Channels | 2 channels: SCL and SDA | — |
| Bus Direction | Bidirectional | — |
| Supported Bus | I2C-bus and derivative SMBus systems | — |
| Process Technology | Bipolar integrated circuit | — |
| Package Type | SO8 plastic small-outline package | — |
| Lead Count | 8 leads | — |
| Lead Pitch | 1.27 mm | — |
| Package Body Length | 4.9 mm | — |
| Package Body Width | 3.9 mm | — |
| Package Body Height | 1.75 mm | — |
| माउंटिंग प्रकार | Surface mount | Surface mount |
| Internal Bus Resistance | 30 ohm | — |
| Enable Control | Enable pins present | — |
| ऑपरेटिंग तापमान रेंज | [DATA_NEEDED: operating temperature range] | — |
| RoHS स्थिति | [DATA_NEEDED: RoHS status] | Compliant |
| REACH Status | [DATA_NEEDED: REACH status] | — |
| AEC-Q100 Qualification | [DATA_NEEDED: AEC-Q100 qualification] | — |
| Maximum Bus Capacitance | [DATA_NEEDED: maximum bus capacitance] | — |
| क्वाइसेंट करंट | [DATA_NEEDED: quiescent current] | — |
| Operating Supply Voltage Range | — | 3 V to 12 V |
| Bidirectional Channels | — | 2 channels |
| Bus Wiring Capacitance | — | 3 nF |
| Main-Bus Capacitance | — | 400 pF conventional I2C specification limit |
| सप्लाई करंट | — | 22 mA |
| Delay Time | — | 250 ns |
| इनपुट कैपेसिटेंस | — | 3000 pF |
| पैकेज | — | 8-SOIC, 0.154 inch body width, 3.90 mm width |
| ऑपरेटिंग तापमान | — | -40 C to +85 C |
| Architecture | — | Bipolar IC with unidirectional analog current amplification |
| Driver Compatibility | — | Compatible with TTL-level drivers |
| ESD Robustness | — | +/-2500 V HBM |
| Latch-Up Immunity | — | Greater than 100 mA |
| MSL | — | MSL Level-1-260C-UNLIM |