P82B715TD vs P82B715DR Comparaison
Comparaison détaillée côte à côte de P82B715TD par NXP Semiconductors et P82B715DR par Texas Instruments. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | P82B715TD | P82B715DR |
|---|---|---|
| Marque | NXP Semiconductors | Texas Instruments |
| Catégorie | Interface ICs | Interface ICs |
| Statut du cycle de vie | Unknown | Actif |
| Product Type | 2-bit bidirectional I2C-bus and SMBus extender | 2-bit bidirectional I2C/SMBus buffer and cable extender |
| Manufacturer | NXP Semiconductors | — |
| Supply Voltage Range | 3 V to 12 V | — |
| Maximum Bus Frequency | 400 kHz | 400 kHz |
| Buffered Channels | 2 channels: SCL and SDA | — |
| Bus Direction | Bidirectional | — |
| Supported Bus | I2C-bus and derivative SMBus systems | — |
| Process Technology | Bipolar integrated circuit | — |
| Package Type | SO8 plastic small-outline package | — |
| Lead Count | 8 leads | — |
| Lead Pitch | 1.27 mm | — |
| Package Body Length | 4.9 mm | — |
| Package Body Width | 3.9 mm | — |
| Package Body Height | 1.75 mm | — |
| Type de montage | Surface mount | Surface mount |
| Internal Bus Resistance | 30 ohm | — |
| Enable Control | Enable pins present | — |
| Plage de température de fonctionnement | [DATA_NEEDED: operating temperature range] | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| REACH Status | [DATA_NEEDED: REACH status] | — |
| AEC-Q100 Qualification | [DATA_NEEDED: AEC-Q100 qualification] | — |
| Maximum Bus Capacitance | [DATA_NEEDED: maximum bus capacitance] | — |
| Courant de repos | [DATA_NEEDED: quiescent current] | — |
| Operating Supply Voltage Range | — | 3 V to 12 V |
| Bidirectional Channels | — | 2 channels |
| Bus Wiring Capacitance | — | 3 nF |
| Main-Bus Capacitance | — | 400 pF conventional I2C specification limit |
| Courant d'alimentation | — | 22 mA |
| Delay Time | — | 250 ns |
| Capacité d'entrée | — | 3000 pF |
| Boîtier | — | 8-SOIC, 0.154 inch body width, 3.90 mm width |
| Température de fonctionnement | — | -40 C to +85 C |
| Architecture | — | Bipolar IC with unidirectional analog current amplification |
| Driver Compatibility | — | Compatible with TTL-level drivers |
| ESD Robustness | — | +/-2500 V HBM |
| Latch-Up Immunity | — | Greater than 100 mA |
| MSL | — | MSL Level-1-260C-UNLIM |