P82B715TD vs P82B715DR 比較
詳細な並列比較: P82B715TD メーカー: NXP Semiconductors および P82B715DR メーカー: Texas Instruments。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | P82B715TD | P82B715DR |
|---|---|---|
| ブランド | NXP Semiconductors | Texas Instruments |
| カテゴリ | Interface ICs | Interface ICs |
| ライフサイクル状態 | Unknown | 有効 |
| Product Type | 2-bit bidirectional I2C-bus and SMBus extender | 2-bit bidirectional I2C/SMBus buffer and cable extender |
| Manufacturer | NXP Semiconductors | — |
| Supply Voltage Range | 3 V to 12 V | — |
| Maximum Bus Frequency | 400 kHz | 400 kHz |
| Buffered Channels | 2 channels: SCL and SDA | — |
| Bus Direction | Bidirectional | — |
| Supported Bus | I2C-bus and derivative SMBus systems | — |
| Process Technology | Bipolar integrated circuit | — |
| Package Type | SO8 plastic small-outline package | — |
| Lead Count | 8 leads | — |
| Lead Pitch | 1.27 mm | — |
| Package Body Length | 4.9 mm | — |
| Package Body Width | 3.9 mm | — |
| Package Body Height | 1.75 mm | — |
| 実装タイプ | Surface mount | Surface mount |
| Internal Bus Resistance | 30 ohm | — |
| Enable Control | Enable pins present | — |
| 動作温度範囲 | [DATA_NEEDED: operating temperature range] | — |
| RoHS ステータス | [DATA_NEEDED: RoHS status] | Compliant |
| REACH Status | [DATA_NEEDED: REACH status] | — |
| AEC-Q100 Qualification | [DATA_NEEDED: AEC-Q100 qualification] | — |
| Maximum Bus Capacitance | [DATA_NEEDED: maximum bus capacitance] | — |
| 静止電流 | [DATA_NEEDED: quiescent current] | — |
| Operating Supply Voltage Range | — | 3 V to 12 V |
| Bidirectional Channels | — | 2 channels |
| Bus Wiring Capacitance | — | 3 nF |
| Main-Bus Capacitance | — | 400 pF conventional I2C specification limit |
| 電源電流 | — | 22 mA |
| Delay Time | — | 250 ns |
| 入力容量 | — | 3000 pF |
| パッケージ | — | 8-SOIC, 0.154 inch body width, 3.90 mm width |
| 動作温度 | — | -40 C to +85 C |
| Architecture | — | Bipolar IC with unidirectional analog current amplification |
| Driver Compatibility | — | Compatible with TTL-level drivers |
| ESD Robustness | — | +/-2500 V HBM |
| Latch-Up Immunity | — | Greater than 100 mA |
| MSL | — | MSL Level-1-260C-UNLIM |