ULN2003ANE4 vs ULN2003AN Vergleich

Detaillierter Direktvergleich von ULN2003ANE4 von Texas Instruments und ULN2003AN von Texas Instruments. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Texas Instruments
ULN2003ANE4 ULN2003ANE4 - 7-Ch NPN Darlington 500mA 16-PDIP | TI

ULN2003ANE4 - 7-Ch NPN Darlington 500mA 16-PDIP | TI

ULN2003ANE4 ✓ Aktiv
Texas Instruments
ULN2003AN ULN2003AN - 50V 500mA 7-Ch Darlington Array | TI | DIP-16

ULN2003AN - 50V 500mA 7-Ch Darlington Array | TI | DIP-16

ULN2003AN ✓ Aktiv

Spezifikationsvergleich

Parameter ULN2003ANE4 ULN2003AN
Marke Texas Instruments Texas Instruments
Kategorie Transistors Transistors
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,12 $0,31
Transistortyp 7 NPN Darlington Pairs 7 x NPN Darlington Pair Array
Configuration Array (7 channels, common emitter) —
Collector-Emitter Voltage (VCEO max) 50 V —
Continuous Collector Current (per channel) 500 mA —
Peak Collector Current (per channel, pulsed) 500 mA (data not confirmed, [DATA_NEEDED]) —
DC Current Gain (hFE) 1000 (min), 5000 (typical) —
Input Compatibility CMOS, TTL, 3.3V/5V logic —
Input Base Resistor (integrated) 2.7 kOhm —
Clamp Diode Type Common-cathode flyback diodes —
Collector-Emitter Saturation Voltage (VCEsat) 0.95 V typical at IC=100mA; 1.35 V at 200mA; 1.7 V at 350mA —
Betriebstemperaturbereich -20C to +85C (some variants -40C to +105C) [DATA_NEEDED: automotive temp grade] -20 C to +85 C (TI datasheet)
Gehäuse 16-PDIP (N, 0.300 inch / 7.62mm width) 16-PDIP (N) through-hole
Montageart Through Hole Through Hole
Pin-Anzahl 16 —
Lead Free / RoHS Status RoHS Compliant (E4 suffix = Pb-free, NiPdAu lead finish) —
MSL-Level 1 (unlimited, through-hole) —
Channel-to-Channel Matching Matched VBE and hFE —
Number of Channels — 7
Collector-Emitter Voltage (Vce Max) — 50 V
Continuous Collector Current (Ic, single output) — 500 mA
Peak Collector Current — 600 mA
DC Current Gain (hFE, typical) — 1000 (min)
Vce(sat) at 100mA — 0.9 V to 1.0 V typical
Vce(sat) at 350mA — 1.1 V typical
Input Base Resistance — 2.7 kohm integrated
Clamp Diodes — Yes (common cathode to COM pin)
Junction Temperature (max) — 150 C
Logic Compatibility — TTL, CMOS, DTL, PMOS, 5V/3.3V microcontrollers
RoHS-Status — Compliant (lead-free N suffix)

Datenblätter & Ressourcen

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