ULN2003ANE4 vs ULN2003AN Comparaison
Comparaison détaillée côte à côte de ULN2003ANE4 par Texas Instruments et ULN2003AN par Texas Instruments. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | ULN2003ANE4 | ULN2003AN |
|---|---|---|
| Marque | Texas Instruments | Texas Instruments |
| Catégorie | Transistors | Transistors |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,12 | $0,31 |
| Type de transistor | 7 NPN Darlington Pairs | 7 x NPN Darlington Pair Array |
| Configuration | Array (7 channels, common emitter) | — |
| Collector-Emitter Voltage (VCEO max) | 50 V | — |
| Continuous Collector Current (per channel) | 500 mA | — |
| Peak Collector Current (per channel, pulsed) | 500 mA (data not confirmed, [DATA_NEEDED]) | — |
| DC Current Gain (hFE) | 1000 (min), 5000 (typical) | — |
| Input Compatibility | CMOS, TTL, 3.3V/5V logic | — |
| Input Base Resistor (integrated) | 2.7 kOhm | — |
| Clamp Diode Type | Common-cathode flyback diodes | — |
| Collector-Emitter Saturation Voltage (VCEsat) | 0.95 V typical at IC=100mA; 1.35 V at 200mA; 1.7 V at 350mA | — |
| Plage de température de fonctionnement | -20C to +85C (some variants -40C to +105C) [DATA_NEEDED: automotive temp grade] | -20 C to +85 C (TI datasheet) |
| Boîtier | 16-PDIP (N, 0.300 inch / 7.62mm width) | 16-PDIP (N) through-hole |
| Type de montage | Through Hole | Through Hole |
| Nombre de broches | 16 | — |
| Lead Free / RoHS Status | RoHS Compliant (E4 suffix = Pb-free, NiPdAu lead finish) | — |
| Niveau MSL | 1 (unlimited, through-hole) | — |
| Channel-to-Channel Matching | Matched VBE and hFE | — |
| Number of Channels | — | 7 |
| Collector-Emitter Voltage (Vce Max) | — | 50 V |
| Continuous Collector Current (Ic, single output) | — | 500 mA |
| Peak Collector Current | — | 600 mA |
| DC Current Gain (hFE, typical) | — | 1000 (min) |
| Vce(sat) at 100mA | — | 0.9 V to 1.0 V typical |
| Vce(sat) at 350mA | — | 1.1 V typical |
| Input Base Resistance | — | 2.7 kohm integrated |
| Clamp Diodes | — | Yes (common cathode to COM pin) |
| Junction Temperature (max) | — | 150 C |
| Logic Compatibility | — | TTL, CMOS, DTL, PMOS, 5V/3.3V microcontrollers |
| Statut RoHS | — | Compliant (lead-free N suffix) |