ULN2003ANE4 vs ULN2003AN Comparación
Comparación detallada lado a lado de ULN2003ANE4 por Texas Instruments y ULN2003AN por Texas Instruments. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | ULN2003ANE4 | ULN2003AN |
|---|---|---|
| Marca | Texas Instruments | Texas Instruments |
| Categoría | Transistors | Transistors |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,12 | $0,31 |
| Tipo de transistor | 7 NPN Darlington Pairs | 7 x NPN Darlington Pair Array |
| Configuration | Array (7 channels, common emitter) | — |
| Collector-Emitter Voltage (VCEO max) | 50 V | — |
| Continuous Collector Current (per channel) | 500 mA | — |
| Peak Collector Current (per channel, pulsed) | 500 mA (data not confirmed, [DATA_NEEDED]) | — |
| DC Current Gain (hFE) | 1000 (min), 5000 (typical) | — |
| Input Compatibility | CMOS, TTL, 3.3V/5V logic | — |
| Input Base Resistor (integrated) | 2.7 kOhm | — |
| Clamp Diode Type | Common-cathode flyback diodes | — |
| Collector-Emitter Saturation Voltage (VCEsat) | 0.95 V typical at IC=100mA; 1.35 V at 200mA; 1.7 V at 350mA | — |
| Rango de temperatura de funcionamiento | -20C to +85C (some variants -40C to +105C) [DATA_NEEDED: automotive temp grade] | -20 C to +85 C (TI datasheet) |
| Encapsulado | 16-PDIP (N, 0.300 inch / 7.62mm width) | 16-PDIP (N) through-hole |
| Tipo de montaje | Through Hole | Through Hole |
| Recuento de pines | 16 | — |
| Lead Free / RoHS Status | RoHS Compliant (E4 suffix = Pb-free, NiPdAu lead finish) | — |
| Nivel MSL | 1 (unlimited, through-hole) | — |
| Channel-to-Channel Matching | Matched VBE and hFE | — |
| Number of Channels | — | 7 |
| Collector-Emitter Voltage (Vce Max) | — | 50 V |
| Continuous Collector Current (Ic, single output) | — | 500 mA |
| Peak Collector Current | — | 600 mA |
| DC Current Gain (hFE, typical) | — | 1000 (min) |
| Vce(sat) at 100mA | — | 0.9 V to 1.0 V typical |
| Vce(sat) at 350mA | — | 1.1 V typical |
| Input Base Resistance | — | 2.7 kohm integrated |
| Clamp Diodes | — | Yes (common cathode to COM pin) |
| Junction Temperature (max) | — | 150 C |
| Logic Compatibility | — | TTL, CMOS, DTL, PMOS, 5V/3.3V microcontrollers |
| Estado RoHS | — | Compliant (lead-free N suffix) |