ULN2003ANE4 vs ULN2003AN Comparação

Comparação detalhada lado a lado de ULN2003ANE4 por Texas Instruments e ULN2003AN por Texas Instruments. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Texas Instruments
ULN2003ANE4 ULN2003ANE4 - 7-Ch NPN Darlington 500mA 16-PDIP | TI

ULN2003ANE4 - 7-Ch NPN Darlington 500mA 16-PDIP | TI

ULN2003ANE4 ✓ Ativo
Texas Instruments
ULN2003AN ULN2003AN - 50V 500mA 7-Ch Darlington Array | TI | DIP-16

ULN2003AN - 50V 500mA 7-Ch Darlington Array | TI | DIP-16

ULN2003AN ✓ Ativo

Comparação de especificações

Parâmetro ULN2003ANE4 ULN2003AN
Marca Texas Instruments Texas Instruments
Categoria Transistors Transistors
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $0,12 $0,31
Tipo de transistor 7 NPN Darlington Pairs 7 x NPN Darlington Pair Array
Configuration Array (7 channels, common emitter) —
Collector-Emitter Voltage (VCEO max) 50 V —
Continuous Collector Current (per channel) 500 mA —
Peak Collector Current (per channel, pulsed) 500 mA (data not confirmed, [DATA_NEEDED]) —
DC Current Gain (hFE) 1000 (min), 5000 (typical) —
Input Compatibility CMOS, TTL, 3.3V/5V logic —
Input Base Resistor (integrated) 2.7 kOhm —
Clamp Diode Type Common-cathode flyback diodes —
Collector-Emitter Saturation Voltage (VCEsat) 0.95 V typical at IC=100mA; 1.35 V at 200mA; 1.7 V at 350mA —
Faixa de temperatura de operação -20C to +85C (some variants -40C to +105C) [DATA_NEEDED: automotive temp grade] -20 C to +85 C (TI datasheet)
Encapsulamento 16-PDIP (N, 0.300 inch / 7.62mm width) 16-PDIP (N) through-hole
Tipo de montagem Through Hole Through Hole
Contagem de pinos 16 —
Lead Free / RoHS Status RoHS Compliant (E4 suffix = Pb-free, NiPdAu lead finish) —
Nível MSL 1 (unlimited, through-hole) —
Channel-to-Channel Matching Matched VBE and hFE —
Number of Channels — 7
Collector-Emitter Voltage (Vce Max) — 50 V
Continuous Collector Current (Ic, single output) — 500 mA
Peak Collector Current — 600 mA
DC Current Gain (hFE, typical) — 1000 (min)
Vce(sat) at 100mA — 0.9 V to 1.0 V typical
Vce(sat) at 350mA — 1.1 V typical
Input Base Resistance — 2.7 kohm integrated
Clamp Diodes — Yes (common cathode to COM pin)
Junction Temperature (max) — 150 C
Logic Compatibility — TTL, CMOS, DTL, PMOS, 5V/3.3V microcontrollers
Status RoHS — Compliant (lead-free N suffix)

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