VNQ660SPTR-E vs VNQ660SP Vergleich

Detaillierter Direktvergleich von VNQ660SPTR-E von STMicroelectronics und VNQ660SP von STMicroelectronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter VNQ660SPTR-E VNQ660SP
Marke STMicroelectronics STMicroelectronics
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $5,37 $2,45
Funktion Quad-channel high-side solid-state relay Quad Channel High-Side Solid State Relay
Technology ST VIPower M0-3 (vertical DMOS) VIPower M0-3
Number of Channels 4 4
Switch Type High-side N-channel power MOSFET —
Supply Voltage (VCC) 6 V to 36 V —
Maximum Continuous Output Current (per channel) 6 A —
On-State Resistance (RDS(on)) 40 mOhm typical (per channel) —
Input Compatibility CMOS logic-level inputs CMOS-compatible logic inputs
Protection Features Thermal shutdown, overvoltage clamp, undervoltage shutdown, open-load detection (off state), reverse battery protection —
Status Feedback Analog status flag per channel —
Off-State Quiescent Current [DATA_NEEDED: standby Iq] —
Betriebstemperatur -40 C to +125 C —
Gehäuse PowerSO-10 with exposed bottom pad PowerSO-10 (10-pin with exposed pad)
Montageart Surface Mount Surface Mount
Maximum Power Dissipation 113.6 W (with proper thermal design) —
RoHS-Status Compliant —
Part Number — VNQ660SP
Manufacturer — STMicroelectronics
Ausgangskonfiguration — High-Side (N-Channel MOSFET)
On-Resistance RDS(on) per Channel — 50 mΩ (typical)
Continuous Output Current per Channel — 6 A
Supply Voltage VCC — 10 V to 36 V
Open-Load Detection — Yes (off-state)
Undervoltage Shutdown — Yes
Overvoltage Shutdown — Yes
Overvoltage Clamp — Yes (active avalanche)
Thermisches Abschalten — Yes
Current Limitation — Yes

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