VNQ660SPTR-E vs VNQ660SP 비교

다음의 상세 나란히 비교: VNQ660SPTR-E 제조: STMicroelectronics 및 VNQ660SP 제조: STMicroelectronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 VNQ660SPTR-E VNQ660SP
브랜드 STMicroelectronics STMicroelectronics
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $5.37 $2.45
기능 Quad-channel high-side solid-state relay Quad Channel High-Side Solid State Relay
Technology ST VIPower M0-3 (vertical DMOS) VIPower M0-3
Number of Channels 4 4
Switch Type High-side N-channel power MOSFET —
Supply Voltage (VCC) 6 V to 36 V —
Maximum Continuous Output Current (per channel) 6 A —
On-State Resistance (RDS(on)) 40 mOhm typical (per channel) —
Input Compatibility CMOS logic-level inputs CMOS-compatible logic inputs
Protection Features Thermal shutdown, overvoltage clamp, undervoltage shutdown, open-load detection (off state), reverse battery protection —
Status Feedback Analog status flag per channel —
Off-State Quiescent Current [DATA_NEEDED: standby Iq] —
동작 온도 -40 C to +125 C —
패키지 PowerSO-10 with exposed bottom pad PowerSO-10 (10-pin with exposed pad)
실장 유형 Surface Mount Surface Mount
Maximum Power Dissipation 113.6 W (with proper thermal design) —
RoHS 상태 Compliant —
Part Number — VNQ660SP
Manufacturer — STMicroelectronics
출력 구성 — High-Side (N-Channel MOSFET)
On-Resistance RDS(on) per Channel — 50 mΩ (typical)
Continuous Output Current per Channel — 6 A
Supply Voltage VCC — 10 V to 36 V
Open-Load Detection — Yes (off-state)
Undervoltage Shutdown — Yes
Overvoltage Shutdown — Yes
Overvoltage Clamp — Yes (active avalanche)
열 차단 — Yes
Current Limitation — Yes

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