VNQ660SPTR-E vs VNQ660SP 对比

详细并排对比 VNQ660SPTR-E 出自 STMicroelectronics 和 VNQ660SP 出自 STMicroelectronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

STMicroelectronics
VNQ660SPTR-E VNQ660SPTR-E - Quad 6A High-Side Smart Power Switch | STMicroelectronics

VNQ660SPTR-E - Quad 6A High-Side Smart Power Switch | STMicroelectronics

VNQ660SPTR-E ✓ 量产中

规格对比

参数 VNQ660SPTR-E VNQ660SP
品牌 STMicroelectronics STMicroelectronics
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $5.37 $2.45
功能 Quad-channel high-side solid-state relay Quad Channel High-Side Solid State Relay
Technology ST VIPower M0-3 (vertical DMOS) VIPower M0-3
Number of Channels 4 4
Switch Type High-side N-channel power MOSFET —
Supply Voltage (VCC) 6 V to 36 V —
Maximum Continuous Output Current (per channel) 6 A —
On-State Resistance (RDS(on)) 40 mOhm typical (per channel) —
Input Compatibility CMOS logic-level inputs CMOS-compatible logic inputs
Protection Features Thermal shutdown, overvoltage clamp, undervoltage shutdown, open-load detection (off state), reverse battery protection —
Status Feedback Analog status flag per channel —
Off-State Quiescent Current [DATA_NEEDED: standby Iq] —
工作温度 -40 C to +125 C —
封装 PowerSO-10 with exposed bottom pad PowerSO-10 (10-pin with exposed pad)
安装类型 Surface Mount Surface Mount
Maximum Power Dissipation 113.6 W (with proper thermal design) —
RoHS 状态 Compliant —
Part Number — VNQ660SP
Manufacturer — STMicroelectronics
输出配置 — High-Side (N-Channel MOSFET)
On-Resistance RDS(on) per Channel — 50 mΩ (typical)
Continuous Output Current per Channel — 6 A
Supply Voltage VCC — 10 V to 36 V
Open-Load Detection — Yes (off-state)
Undervoltage Shutdown — Yes
Overvoltage Shutdown — Yes
Overvoltage Clamp — Yes (active avalanche)
热关断 — Yes
Current Limitation — Yes

数据手册与资源

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