VNQ660SPTR-E vs VNQ660SP Comparación
Comparación detallada lado a lado de VNQ660SPTR-E por STMicroelectronics y VNQ660SP por STMicroelectronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
STMicroelectronics
VNQ660SPTR-E - Quad 6A High-Side Smart Power Switch | STMicroelectronics
VNQ660SPTR-E ✓ ActivoSTMicroelectronics
VNQ660SP - 6A Quad High-Side Solid State Relay, PowerSO-10 | STMicroelectronics
VNQ660SP ✓ ActivoComparación de especificaciones
| Parámetro | VNQ660SPTR-E | VNQ660SP |
|---|---|---|
| Marca | STMicroelectronics | STMicroelectronics |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $5,37 | $2,45 |
| Función | Quad-channel high-side solid-state relay | Quad Channel High-Side Solid State Relay |
| Technology | ST VIPower M0-3 (vertical DMOS) | VIPower M0-3 |
| Number of Channels | 4 | 4 |
| Switch Type | High-side N-channel power MOSFET | — |
| Supply Voltage (VCC) | 6 V to 36 V | — |
| Maximum Continuous Output Current (per channel) | 6 A | — |
| On-State Resistance (RDS(on)) | 40 mOhm typical (per channel) | — |
| Input Compatibility | CMOS logic-level inputs | CMOS-compatible logic inputs |
| Protection Features | Thermal shutdown, overvoltage clamp, undervoltage shutdown, open-load detection (off state), reverse battery protection | — |
| Status Feedback | Analog status flag per channel | — |
| Off-State Quiescent Current | [DATA_NEEDED: standby Iq] | — |
| Temperatura de funcionamiento | -40 C to +125 C | — |
| Encapsulado | PowerSO-10 with exposed bottom pad | PowerSO-10 (10-pin with exposed pad) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Maximum Power Dissipation | 113.6 W (with proper thermal design) | — |
| Estado RoHS | Compliant | — |
| Part Number | — | VNQ660SP |
| Manufacturer | — | STMicroelectronics |
| Configuración de salida | — | High-Side (N-Channel MOSFET) |
| On-Resistance RDS(on) per Channel | — | 50 mΩ (typical) |
| Continuous Output Current per Channel | — | 6 A |
| Supply Voltage VCC | — | 10 V to 36 V |
| Open-Load Detection | — | Yes (off-state) |
| Undervoltage Shutdown | — | Yes |
| Overvoltage Shutdown | — | Yes |
| Overvoltage Clamp | — | Yes (active avalanche) |
| Apagado térmico | — | Yes |
| Current Limitation | — | Yes |