1ED3125MU12FXUMA1 - 14A Isolated Gate Driver | Infineon EiceDRIVER
Teilenummer: 1ED3125MU12FXUMA1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $2.85 | $2,85 |
| 10 | $2.56 | $25,60 |
| 100 | $2.14 | $214,00 |
| 500 | $1.84 | $920,00 |
| 1.000 | $1.55 | $1.550,00 |
1ED3125MU12FXUMA1 Übersicht
An isolated gate driver is a specialized driver IC that provides galvanic isolation between a low-voltage control domain (logic-level PWM from an MCU or DSP) and a high-voltage power domain (gate of a switching power device). Isolated drivers fall within the gate-driver hierarchy: gate driver -> power management -> semiconductor -> discrete switch interface. They are essential where the control logic must remain safely referenced to chassis ground while the switch node floats at hundreds or thousands of volts and switches at kHz-to-MHz dV/dt rates.
Key specifications include 14 A peak output current, 90 ns typical propagation delay, 3000 Vrms isolation voltage, an active Miller clamp to prevent parasitic turn-on, and short-circuit clamping to protect the driven switch during fault events. The wide driver supply range supports both 12 V and 15 V gate-drive rails commonly used for IGBTs and SiC MOSFETs. Built-in undervoltage lockout (UVLO) for the output side ensures the switch cannot operate in its linear region during cold-start or brown-out.
The 1ED3125MU12F (base part number) uses coreless transformer isolation technology, achieving reinforced insulation while keeping propagation delay tightly matched between turn-on and turn-off (typically within 25 ns). This matched delay is critical for high-frequency half-bridge and full-bridge topologies where duty-cycle distortion from delay mismatch would otherwise create DC-bias and thermal runaway in transformers.
Typical applications include industrial motor drives ( servo, VFD ), solar string and central inverters, EV onboard chargers and DC-DC converters, induction heating, UPS systems, and welding power supplies. The 14 A drive strength allows direct switching of large IGBT modules without an external booster stage, reducing BOM cost and board area.
When designing with this driver, place the bootstrap or isolated supply capacitor within 5 mm of the VCC and VBS pins to minimize parasitic inductance. Keep the gate-drive loop area below 50 mm² to control ringing, and route the Miller-clamp return directly to the power-device source/emitter Kelvin pin rather than the driver ground.
This page synthesizes distributor pricing, pin-compatible drop-in alternatives, and practical PCB-layout design notes not found in the manufacturer datasheet alone.
Drop-in-Alternativen für 1ED3125MU12FXUMA1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit 1ED3125MU12FXUMA1 (gleiche Bauform und Footprint) – abweichend in Package, Configuration, Operating Temperature Range, Peak Output Current, Product Family.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
1ED3124MU12FXUMA1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
1ED3123MU12FXUMA1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
1ED3127MU12FXUMA1
✅ Drop-In✓ Auf Lager
$0.74 / Stück
Datenblatt ansehen →1ED3125MU12F
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
Si8271GB-IS
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
UCC21732
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
1ED3125MU12FXUMA1 Grenzwerte & elektrische Eigenschaften
| Manufacturer | Infineon Technologies |
| Product Family | EiceDRIVER Compact 1ED31xx |
| Funktion | Single-channel isolated gate driver |
| Peak Output Current | 14 A |
| Typical Output Current | 10 A |
| Isolation Voltage | 3000 Vrms |
| Propagation Delay (typ) | 90 ns |
| Number of Channels | 1 |
| Isolation Technology | Magnetic coupling (coreless transformer) |
| Gehäuse | PG-DSO-8 |
| Pin-Anzahl | 8 |
| Driver Supply Voltage (VCC) | 3 V to 5.5 V (input side) |
| Output Side Supply (VOUT) | 12 V to 20 V |
| Betriebstemperaturbereich | -40 C to +150 C |
| Active Miller Clamp | Yes |
| Short-Circuit Clamping | Yes |
| Active Shutdown | Yes |
| Undervoltage Lockout (UVLO) | Yes |
| RoHS-Status | Compliant |
1ED3125MU12FXUMA1 Pin-Konfiguration
| Pin 1 | VCC — Input-side 5 V supply (logic domain) |
| Pin 2 | IN+ — Non-inverting PWM input |
| Pin 3 | IN- — Inverting input (tie to GND1 if unused) |
| Pin 4 | GND1 — Input-side ground (control domain) |
| Pin 5 | VOUT — Output-side supply, 12-20 V (gate-drive domain) |
| Pin 6 | OUT — Gate-drive output to power-switch gate |
| Pin 7 | CLAMP / VBS — Active Miller-clamp return / bootstrap supply |
| Pin 8 | GND2 — Output-side ground (power domain) |
Typische Anwendungen
1ED3125MU12FXUMA1 ist geeignet für 6 Anwendungs: Industrial Motor Drives (VFD / Servo), Solar String Inverters, EV Onboard Chargers and DC-DC Converters, Uninterruptible Power Supplies (UPS), Induction Heating and Welding, Server and Telecom Rectifiers.
Industrial Motor Drives (VFD / Servo)
The 1ED3125MU12FXUMA1 drives IGBT half-bridge modules in 400 V to 690 V industrial VFD and servo drives. Its 14 A peak output directly switches 50 A to 200 A IGBT modules without an external booster, simplifying the BOM. The 3000 Vrms isolation allows the control MCU to remain safely referenced to chassis ground while the switch node floats at the DC bus. Integrated active Miller clamp prevents shoot-through from dV/dt-induced parasitic turn-on at the typical 4-8 kV/us edges of 1200 V IGBTs. The matched 90 ns propagation delay keeps duty-cycle distortion under 1 percent at 20 kHz PWM, preserving inverter efficiency and reducing motor-current harmonics.
Empfohlen
Solar String Inverters
In 1500 V DC solar string inverters, the 1ED3125MU12FXUMA1 drives SiC MOSFET half-bridges operating at 50-100 kHz switching frequency. The 14 A peak current charges and discharges the SiC gate quickly, minimizing switching loss and improving inverter efficiency by 0.3-0.5 percent compared to discrete-driver solutions. The 3000 Vrms isolation provides reinforced insulation per IEC 62109 for PV applications. Short-circuit clamping protects the SiC MOSFET during desaturation events, where a single microsecond of delay can destroy the switch. Active shutdown ensures the IGBT/SiC stays OFF if the output-side supply collapses, preventing catastrophic shoot-through.
Empfohlen
EV Onboard Chargers and DC-DC Converters
The 1ED3125MU12FXUMA1 is used in 3.3 kW to 22 kW EV onboard chargers (OBC) to drive the primary-side IGBTs or SiC MOSFETs of the PFC and isolated DC-DC stages. The 14 A peak drive current is well-matched to 650 V SiC MOSFETs in OBC designs up to 22 kW. The 3000 Vrms isolation meets IEC 61851 and IEC 60664 reinforced-insulation requirements for EV power electronics. The PG-DSO-8 package supports surface-mount assembly onto IMS (insulated metal substrate) PCBs common in automotive power modules. Low propagation delay of 90 ns enables 100 kHz+ switching frequency, shrinking the magnetic components and reducing OBC weight.
Empfohlen
Uninterruptible Power Supplies (UPS)
In online double-conversion UPS systems rated 5 kVA to 50 kVA, the 1ED3125MU12FXUMA1 drives the inverter-stage IGBTs that synthesize the 50/60 Hz output from the DC bus. The 14 A peak current is sufficient for 600 V/100 A IGBT modules commonly used in commercial UPS products. The 90 ns propagation delay enables 20 kHz switching for low acoustic noise and high inverter efficiency (typically 97-98 percent). The active Miller clamp prevents cross-conduction during load steps, where the DC bus can swing between 350 V and 800 V. Reinforced isolation simplifies agency compliance per UL 1778 and IEC 62040.
Empfohlen
Induction Heating and Welding
Induction heating inverters operating at 30-100 kHz and welding power sources requiring high peak currents benefit from the 1ED3125MU12FXUMA1's 14 A peak output and matched 90 ns delay. The driver handles resonant-reset half-bridge and full-bridge topologies where duty-cycle accuracy directly controls heating power. In welding inverters, the active Miller clamp prevents false triggering from the high dV/dt edges of IGBTs switching at 20-50 kHz. The wide output-side supply range (12 V to 20 V) accommodates both IGBT (+15 V drive) and SiC MOSFET (+18 V or +20 V drive) without external level shifters.
Empfohlen
Server and Telecom Rectifiers
In 48 V rectifier modules and 400 V to 800 V data-center power shelves, the 1ED3125MU12FXUMA1 drives primary-side switches in totem-pole PFC and LLC stages. The 14 A peak drive current supports 100 kHz+ switching of SiC MOSFETs, allowing higher power density in 1U and 2U form factors. The 3000 Vrms isolation and -40 C to +150 C operating range qualify the driver for harsh-environment telecom outdoor cabinets. Active shutdown maintains safe OFF-state during brown-out, preventing back-conduction through the body diode that could destroy the SiC switch. The PG-DSO-8 small footprint enables high-density PCB layouts.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für 1ED3125MU12FXUMA1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | 1ED3124MU12FXUMA1 | 1ED3123MU12FXUMA1 | 1ED3127MU12FXUMA1 | 1ED3125MU12F | Si8271GB-IS | UCC21732 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Skyworks | Texas Instruments |
| Package | PG-DSO-8 | PG-DSO-8 | PG-DSO-8 | PG-DSO-8 | PG-DSO-8 | PG-DSO-8 (SOIC-8W) | SOIC-8W |
| Peak Output Current | 14 A | 10 A | 6 A | 18 A | 14 A | 10 A | 10 A |
| Isolation Voltage | 3000 Vrms | 3000 Vrms | 3000 Vrms | 3000 Vrms | 3000 Vrms | 2500 Vrms | 5700 Vrms |
| Propagation Delay | 90 ns | 90 ns | 90 ns | 90 ns | 90 ns | 60 ns | 90 ns |
| Active Miller Clamp | Yes | Yes | Yes | Yes | Yes | No (external clamp only) | Yes |
| Output-Side Supply Range | 12 V to 20 V | 12 V to 20 V | 12 V to 20 V | 12 V to 20 V | 12 V to 20 V | 4.5 V to 30 V | 12 V to 33 V |
| Operating Temperature Range | -40 C to +150 C | -40 C to +150 C | -40 C to +150 C | -40 C to +150 C | -40 C to +150 C | -40 C to +125 C | -40 C to +125 C |
Wichtigste Unterscheidungsmerkmale
- Highest peak drive current in the 1ED31xx family while maintaining PG-DSO-8 small footprint (vs. 1ED3124MU12FXUMA1)
- Same EiceDRIVER family pinout allows field upgrades to higher-current 1ED3127 (vs. 1ED3127MU12FXUMA1)
- Integrated active Miller clamp eliminates need for discrete clamp transistors (vs. Si8271GB-IS)
- Higher operating junction temperature than competitor SOIC-8W drivers (vs. UCC21732)
Designhinweise
Keep the gate-drive loop (driver OUT pin to gate to source/emitter back to driver GND2) below 50 mm² to minimize parasitic inductance. At 14 A peak drive current with 5 ns rise time, even 10 nH of loop inductance creates 14 V overshoot that can exceed the gate-oxide rating of SiC MOSFETs. Use a 4-layer PCB with a continuous ground plane on the second layer directly beneath the gate-driver, and place the bootstrap/isolated supply capacitor within 5 mm of the VCC and VOUT pins.
Estimated: At 100 kHz switching frequency driving a 100 nC total gate charge, the driver dissipates approximately Qg x Vcc x fsw = 100 nC x 15 V x 100 kHz = 0.15 W from gate charge alone. Combined with quiescent current loss of ~50 mW, total driver dissipation stays below 0.25 W in typical SiC-MOSFET applications. The PG-DSO-8 package with a JEDEC standard 2s2p test board has theta_JA of approximately 120 C/W, resulting in 30 C junction rise above ambient - well within the 150 C maximum.
Do not tie the Miller-clamp return (pin 7) to the driver GND2; route it directly to the Kelvin source/emitter pin of the power switch. A ground-bounce of even 1 V on the clamp return disables Miller-clamp effectiveness and allows parasitic turn-on. Also, always populate the bootstrap or isolated supply capacitor with at least 1 uF of ceramic capacitance in parallel with 10 uF bulk - undersized decoupling causes VOUT to droop below UVLO threshold during high-side turn-on.
Maintain at least 8 mm creepage and 5 mm clearance between the input-side (pins 1-4) and output-side (pins 5-8) copper traces to preserve the 3000 Vrms reinforced isolation. Do not route any control-domain signals under the IC body or under the output-side copper - the inner transformer barrier of the package requires a 1 mm keepout on inner PCB layers. Place the input-side bypass capacitor within 3 mm of pin 1 (VCC).
Compliance-Informationen
RoHS compliant per DigiKey listing. Not AEC-Q100 qualified (industrial grade). Reach SVHC compliant per Infineon product page.
