BSC520N15NS3 - 150V 21A N-Ch OptiMOS 3 MOSFET | Infineon
Teilenummer: BSC520N15NS3 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $1.62 | $1,62 |
| 10 | $1.45 | $14,50 |
| 100 | $1.18 | $118,00 |
| 500 | $0.96 | $480,00 |
| 1.000 | $0.82 | $820,00 |
| 3.000 | $0.71 | $2.130,00 |
BSC520N15NS3 Übersicht
What is an N-channel power MOSFET? An N-channel MOSFET is a voltage-driven semiconductor switch whose drain current flows when a positive gate-source voltage is applied. MOSFETs belong to the discrete power-semiconductor hierarchy (transistor -> FET -> MOSFET -> power MOSFET -> OptiMOS class), and they sit inside the broader power-electronics tree (switching regulator -> DC-DC converter -> SMPS -> power management). Infineon's OptiMOS family is positioned for low-voltage through high-voltage synchronous rectification, motor drive, and hot-swap roles where conduction and switching losses together set the thermal budget.
Key features include: 150 V drain-source breakdown (V(BR)DSS), 52 mOhm max RDS(on) at VGS = 10 V, 21 A continuous ID, gate-threshold VGS(th) typically 3 V, and an avalanche-rated single-pulse body diode. The SuperSO8 / TDSON-8 footprint reduces footprint vs DPAK while preserving a low thermal resistance path through the drain tab and exposed pad.
Architecturally, the OptiMOS 3 cell uses a trench-gate structure to shrink cell pitch, dropping RDS(on) per unit area versus planar generations. The trade-off is a higher gate charge Qg, so driver design must supply sufficient peak current during the Miller plateau.
Typical applications include synchronous rectification in 48 V telecom and server bus rails, secondary-side rectification on 24 V industrial supplies, brushless DC (BLDC) motor half-bridges, e-bike and power-tool inverters, solar micro-inverters, and hot-swap / OR-ing switches in telecom shelves.
When designing with the BSC520N15NS3, keep the gate-drive voltage above 10 V for full RDS(on) performance, place a gate-source pull-down resistor to hold the device off during start-up, and respect the avalanche energy rating during inductive switching events.
This page synthesizes distributor pricing, drop-in same-package alternatives, and practical design notes not aggregated in the manufacturer datasheet itself.
Drop-in-Alternativen für BSC520N15NS3 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit BSC520N15NS3 (gleiche Bauform und Footprint) – abweichend in Package, Technology, MSL Level.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
BSC520N15NS3G
✅ Drop-In✓ Auf Lager
$0.62 / Stück
Datenblatt ansehen →BSC520N15NS3GATMA1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
STL35N15F3
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
AON6454A
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
SI7430DP-T1-E3
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
BSC520N15NS3 Grenzwerte & elektrische Eigenschaften
| Technology | OptiMOS 3, N-channel trench MOSFET |
| Drain-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID, TC=25C) | 21 A |
| Pulsed Drain Current (IDM) | 84 A |
| On-State Resistance RDS(on) max (VGS=10V) | 52 mOhm |
| Gate-Source Voltage VGS max | +/- 20 V |
| Gate Threshold Voltage VGS(th) typ | 3 V |
| Power Dissipation (TC=25C) | 57 W |
| Betriebs-Sperrschichttemperatur | -55C to +150C |
| Gehäuse | PG-TDSON-8-5 (SuperSO8, 5x6 mm) |
| Montageart | Surface Mount |
| MSL-Level | 1 |
| RoHS-Status | Compliant |
| Avalanche Energy Rated | Yes (single-pulse) |
| Body Diode | Intrinsic, avalanche-rated |
BSC520N15NS3 Pin-Konfiguration
| Pin 1 | S — Source |
| Pin 2 | S — Source |
| Pin 3 | S — Source |
| Pin 4 | G — Gate |
| Pin 5 | D — Drain |
| Pin 6 | D — Drain |
| Pin 7 | D — Drain |
| Pin 8 | D — Drain |
BSC520N15NS3 DC Sicherer Arbeitsbereich
Typische Anwendungen
BSC520N15NS3 ist geeignet für 6 Anwendungs: Synchronous Rectification in 48V Telecom Supplies, Brushless DC (BLDC) Motor Half-Bridge, Solar Micro-Inverter Power Stage, Hot-Swap / OR-ing in Telecom Shelves, Industrial 24V / 96V DC Bus Switching, Power Tool / E-Bike Battery Protection.
Synchronous Rectification in 48V Telecom Supplies
The BSC520N15NS3 fits 48V telecom secondary-side synchronous rectification where 150V VDS provides 3x headroom against bus transients and load-dump spikes, while the 52 mOhm RDS(on) at VGS=10V keeps conduction loss under 0.5W at 10A load. Placed as the low-side FET of a forward or half-bridge stage following the main transformer, it replaces Schottky diode pairs and recovers 2-4% efficiency. The SuperSO8 PG-TDSON-8-5 footprint saves PCB area versus DPAK. According to the Infineon datasheet, gate charge is optimized so a simple 10V gate driver can switch the device at 200kHz without excessive cross-conduction. The exposed drain tab sinks heat efficiently, enabling fanless designs in NEBS-compliant telecom shelves.
Empfohlen
Brushless DC (BLDC) Motor Half-Bridge
BSC520N15NS3 is a good fit as the low-side or high-side switch in 48-72V BLDC motor half-bridges for e-bike controllers, power tools, and small industrial drives. Its 21 A continuous rating matches sub-1kW motor phases, while the 84 A pulsed IDM handles motor locked-rotor inrush events. The OptiMOS 3 cell geometry yields fast switching edges that minimize dead-time losses, and the intrinsic avalanche-rated body diode can commutate the motor's inductive energy without external clamping. The SuperSO8 5x6mm footprint suits compact three-phase inverter PCBs. For matched half-bridge gate drive, pair the BSC520N15NS3 with a dedicated half-bridge driver such as the IR2104 or 3SiPhase.
Empfohlen
Solar Micro-Inverter Power Stage
In sub-300W solar micro-inverter power stages, the BSC520N15NS3 serves as the primary switch on the high-voltage side of a flyback or full-bridge stage, accepting the rectified panel voltage with adequate 150V headroom. The 52 mOhm RDS(on) keeps conduction losses below 1% at full MPPT current, while the small Qg allows ZVS-style switching transitions for higher efficiency. According to the Infineon OptiMOS family datasheet, the device's avalanche energy capability is engineered for the line-current and inductor losses typical in transformer-coupled topologies. The SMD PG-TDSON-8-5 package simplifies automated manufacturing versus through-hole alternatives.
Empfohlen
Hot-Swap / OR-ing in Telecom Shelves
BSC520N15NS3 serves as a 48V rail hot-swap or OR-ing MOSFET in telecom and server shelves, where the 150V VDS provides comfortable headroom against 80V transient spikes and the 52 mOhm RDS(on) keeps in-line conduction loss under 1W at 5A load. Used in the source-following configuration with a gate-bias network, the device blocks reverse-current during feed transitions, while acting as a near-ideal switch during normal operation. The SuperSO8 5x6mm footprint allows higher power density on the front-end board. For parallel OR-ing, multiple BSC520N15NS3 devices share load current with minimal mismatch due to the positive temperature coefficient of RDS(on).
Empfohlen
Industrial 24V / 96V DC Bus Switching
In industrial PLC and motor-drive environments, the BSC520N15NS3 switches 24V to 96V DC buses that can experience inductive kickback from solenoids and contactors. The 150V VDS rating easily exceeds 96V plus inductive ringing, while the OptiMOS 3 trench structure gives fast switching for low-loss PWM control. With 21A continuous current it can drive small DC loads or serve as a solid-state relay. The SuperSO8 package meets the small-footprint requirements of dense industrial PCBs. According to the Infineon datasheet, the device is rated for avalanche-energy single-pulse events, enabling robust behavior during accidental short-circuit events.
Empfohlen
Power Tool / E-Bike Battery Protection
BSC520N15NS3 is used as the protection / discharge MOSFET in 36V-72V battery packs for power tools and e-bikes, where 150V VDS covers 20s Li-ion packs with margin, and the 52 mOhm RDS(on) keeps voltage drop under 200 mV at peak 5A continuous discharge. The intrinsic avalanche-rated body diode can absorb regen current from BLDC deceleration without external TVS. The SuperSO8 5x6mm SMD package fits inside the slim battery housing. The OptiMOS 3 process is robust against the short-circuit abuse typical in field-deployed battery systems. Always pair with a dedicated battery protection IC and PTC fuse for full pack safety.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für BSC520N15NS3 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | BSC520N15NS3G | BSC520N15NS3GATMA1 | IPB107N15N3 G | STL35N15F3 | AON6454A | SI7430DP-T1-E3 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | STMicroelectronics | Alpha & Omega Semiconductor | Vishay Siliconix |
| Package | PG-TDSON-8-5 (SuperSO8 5x6) | PG-TDSON-8-5 (SuperSO8 5x6) - same | PG-TDSON-8-5 (SuperSO8 5x6) - same | TO-263 D2PAK - different footprint | PowerFLAT 5x6 - same footprint | DFN 5x6 - same footprint | PowerPAK SO-8 - same footprint |
| Drain-Source Voltage (VDS) | 150 V | 150 V | 150 V | 150 V | 150 V | 150 V | 150 V |
| Continuous Drain Current (ID @ TC=25C) | 21 A | 21 A | 21 A | 107 A | 35 A | 30 A | 24 A |
| On-Resistance RDS(on) max at VGS=10V | 52 mOhm | 52 mOhm | 52 mOhm | 28 mOhm | 50 mOhm | 55 mOhm | 75 mOhm |
| Technology Family | OptiMOS 3 trench | OptiMOS 3 trench | OptiMOS 3 trench | OptiMOS 3 trench | STripFET III | AlphaMOS | TrenchFET Gen IV |
| Power Dissipation (TC=25C) | 57 W | 57 W | 57 W | 250 W | 100 W | 83 W | 78 W |
| RoHS Compliance | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
Wichtigste Unterscheidungsmerkmale
- OptiMOS 3 technology leadership at 150V class (vs. STL35N15F3 (STMicroelectronics STripFET III))
- Drop-in same-package alternatives available across brands (vs. Cross-package DPAK alternatives like IPB107N15N3)
- Avalanche-energy rated body diode for hard-switched commutation (vs. Vishay SI7430DP-T1-E3)
Designhinweise
Estimated: At TC=25C, full ID=21A dissipation is P=I^2*R=21^2*0.052=22.9W with RDS(on) at 25C; the package can dissipate 57W at TC=25C with infinite heatsink. In real designs with 50C case rise, derate to ~3-5W continuous. Always check thermal resistance from datasheet figure (theta_JC) and apply to junction-rise calculation: TJ = TC + P*(theta_JC). For the SuperSO8 footprint, copper-pour area on the drain tab is the dominant heat path.
Place the gate-drive loop area (gate to source) as small as possible - this loop carries the di/dt during switching and stray inductance. Use a wide source-return trace or Kelvin connection to pin 2/3 (source sense) when available, separated from the high-current source path. Place input/output capacitors on the same side of the board as the drain tab to minimize the power loop inductance, which would otherwise produce ringing during fast switching edges.
Do not exceed +/-20V on VGS even transiently; ESD strikes during handling can punch through the gate oxide. Use a 10k pull-down resistor from gate to source to prevent inadvertent turn-on during controller start-up or loss of gate drive. Avoid operating in linear (active) region during switching transitions - shoot-through in half-bridges causes thermal runaway. Avalanche energy rating is single-pulse; repeated avalanche events above the rating will degrade RDS(on) over time.
Compliance-Informationen
RoHS and REACH compliant per Infineon product page. The 'G' suffix denotes lead-free terminal finish. Halogen-free status not explicitly stated in the verified web data; defaulting to 'unknown'.
