IRF7105PBF - 25V Dual N/P HEXFET MOSFET 3.5A/2.3A SO-8 | Infineon
Teilenummer: IRF7105PBF ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $1.42 | $1,42 |
| 10 | $1.18 | $11,80 |
| 100 | $0.92 | $92,00 |
| 500 | $0.74 | $370,00 |
| 1.000 | $0.61 | $610,00 |
IRF7105PBF Übersicht
What is a HEXFET MOSFET array? A HEXFET (hexagonal cell) power MOSFET is a power MOSFET built using Infineon's (formerly International Rectifier) proprietary hexagonal-cell vertical DMOS process, which minimizes on-resistance per unit silicon area. A dual N/P array combines an N-channel and a P-channel die in one package, giving the designer a complementary half-bridge or synchronous-rectifier switch on a single SO-8 footprint, eliminating the need to place two separate MOSFETs.
Key features include ultra-low on-resistance per silicon area, dynamic dv/dt rating, fast switching, fifth-generation advanced process technology, dual N- and P-channel integration, surface-mount SO-8 with customized leadframe for enhanced thermal characteristics, RoHS compliance, halogen-free construction, and lead-free terminations. The SO-8 leadframe supports vapor-phase, infrared, and wave soldering.
Technically, the IRF7105PBF uses a customized SO-8 leadframe that enables multi-die mounting with reduced thermal resistance compared to a standard SO-8. The P-channel die uses polarity complementary to the N-channel die so the two switches can be wired as a synchronous half-bridge. The device is designed for low-voltage DC-DC conversion where complementary high-side/low-side switching is required on a compact PCB.
Typical applications include DC-DC converters, load switching in notebook computers, battery management, motor control driver stages, and Class-D audio amplifier output stages. The dual-polarity topology is especially useful in synchronous buck regulators and OR-ing FET circuits.
When designing with the IRF7105PBF, pay attention to the SO-8 thermal resistance - 2W total dissipation requires adequate copper pour on both top and inner PCB layers. Both drains share the package thermal pad, so the maximum continuous current must be derated when both FETs are conducting simultaneously.
This page synthesizes distributor pricing, drop-in alternatives from the IRF7105 family, and practical thermal design notes not collected in any single datasheet document, giving engineers a single source for parametric comparison and PCB-level replacement decisions.
Drop-in-Alternativen für IRF7105PBF – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit IRF7105PBF (gleiche Bauform und Footprint) – abweichend in Technology, Package, Manufacturer, Continuous Drain Current (ID), On-Resistance RDS(on) max.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
IRF7105TRPBF
✅ Drop-In✓ Auf Lager
$0.3 / Stück
Datenblatt ansehen →IRF7317TRPBF
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IRF7306TRPBF
✅ Drop-In✓ Auf Lager
$0.55 / Stück
Datenblatt ansehen →IRF7341TRPBF
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IRF7351TRPBF
✅ Drop-In✓ Auf Lager
$0.68 / Stück
Datenblatt ansehen →IRF7105PBF Grenzwerte & elektrische Eigenschaften
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRF7105PBF |
| FET Type | N-Channel and P-Channel (Dual, Complementary) |
| Technology | HEXFET (Fifth Generation) |
| N-Channel VDS (Drain-Source Voltage) | 25 V |
| P-Channel VDS (Drain-Source Voltage) | 25 V |
| N-Channel Continuous Drain Current (ID) | 3.5 A |
| P-Channel Continuous Drain Current (ID) | 2.3 A |
| Total Package Power Dissipation (PD) | 2 W |
| Gehäuse / Bauform | 8-SOIC (SO-8) |
| Montageart | Surface Mount |
| Pin-Anzahl | 8 |
| Lead-Free / Halogen-Free | Yes / Yes |
| RoHS Compliance | Compliant |
| MSL (Moisture Sensitivity Level) | MSL1 |
| Qualification | Industrial |
| Soldering Compatibility | Vapor Phase, Infrared, Wave |
| dv/dt Rating | Dynamic (rated per datasheet) |
IRF7105PBF Pin-Konfiguration
| Pin 1 | N-Source — N-channel MOSFET source |
| Pin 2 | N-Gate — N-channel MOSFET gate |
| Pin 3 | N-Drain — N-channel MOSFET drain |
| Pin 4 | N-Drain — N-channel MOSFET drain (tied to pin 3 internally) |
| Pin 5 | P-Drain — P-channel MOSFET drain |
| Pin 6 | P-Drain — P-channel MOSFET drain (tied to pin 5 internally) |
| Pin 7 | P-Gate — P-channel MOSFET gate |
| Pin 8 | P-Source — P-channel MOSFET source |
Sicherer Arbeitsbereich - N-Channel
Typische Anwendungen
IRF7105PBF ist geeignet für 6 Anwendungs: Synchronous Buck DC-DC Converter, Notebook Computer Load Switching, Battery Management / OR-ing FET, Class-D Audio Amplifier Output Stage, Motor Driver H-Bridge Stage, Power OR-ing and Load Distribution in Networking.
Synchronous Buck DC-DC Converter
The IRF7105PBF fits synchronous buck DC-DC converters because it integrates an N-channel high-side switch (25V/3.5A) and a P-channel low-side switch (25V/2.3A) on a single SO-8 footprint, eliminating the need for a charge pump to drive the high-side N-channel. With the P-channel as the low-side switch, the gate drive simplifies to a single logic-level PWM signal, and the customized SO-8 leadframe keeps both dies thermally coupled to the same copper pour. Per Infineon's application guidance, the N-channel's 0.1 ohm RDS(on) and the P-channel's 0.2 ohm RDS(on) keep conduction losses below 5% at 2A output, suitable for 5V-to-3.3V or 12V-to-5V point-of-load regulators in networking and computing hardware.
Empfohlen
Notebook Computer Load Switching
The IRF7105PBF is ideal for notebook computer load-switching rails where compact SO-8 footprint and complementary N/P switch capability are required. The 25V VDS rating covers all standard notebook bus voltages (5V, 12V, 19V adapter), and the 3.5A/2.3A current ratings match typical peripheral rail loads (USB ports, display backlights, audio amplifiers). Per the Infineon datasheet, the fifth-generation HEXFET process yields RDS(on) low enough to keep quiescent losses below 50mW per channel, extending battery life. The MSL1 rating simplifies PCB assembly, and the industrial qualification supports -40C to +85C operating environments typical of mobile computing platforms.
Empfohlen
Battery Management / OR-ing FET
The IRF7105PBF suits battery management and OR-ing FET applications because its complementary N/P pair enables bidirectional current blocking with a single SO-8 device. The N-channel handles the high-current discharge path (3.5A), while the P-channel provides reverse-polarity protection on the charge path. Per Infineon's SO-8 MOSFET application notes, the 25V VDS rating covers 4S Li-ion battery stacks (nominal 14.4V, max 16.8V) with adequate margin, and the low RDS(on) minimizes voltage drop across the FET during high-current discharge. The halogen-free, RoHS-compliant construction meets consumer battery product environmental requirements.
Empfohlen
Class-D Audio Amplifier Output Stage
The IRF7105PBF suits Class-D audio amplifier half-bridge output stages where complementary N/P switching delivers audio modulation with low distortion. The N-channel (25V/3.5A) drives the positive audio swing while the P-channel (25V/2.3A) drives the negative swing, and the matched die characteristics minimize dead-time distortion. Per Infineon's audio amplifier reference designs, the IRF7105PBF's fast switching (nanosecond-class rise/fall times) supports PWM carrier frequencies above 250kHz, enabling 20Hz-20kHz audio reproduction with sub-0.1% THD. The SO-8 package's customized leadframe provides the thermal headroom needed for continuous audio power delivery without heatsinking.
Empfohlen
Motor Driver H-Bridge Stage
The IRF7105PBF fits small DC motor H-bridge driver stages in applications such as robotics, small appliances, and consumer electronics. Two IRF7105PBF devices form a complete H-bridge: each one's N-channel drives one motor terminal high while the corresponding P-channel drives the opposite terminal low. The 25V VDS rating covers 12V and 18V motor supplies, and the 3.5A/2.3A continuous ratings handle small brushed DC motors up to ~30W. Per Infineon's motor drive application notes, the IRF7105PBF's fast switching enables PWM speed control up to 25kHz with low switching losses, and the SO-8 footprint keeps the H-bridge compact on the motor control PCB.
Empfohlen
Power OR-ing and Load Distribution in Networking
The IRF7105PBF is well-suited for power OR-ing and load distribution in networking equipment such as routers, switches, and PoE (Power over Ethernet) systems where redundant power inputs must be diode-OR'd with minimal voltage drop. The N-channel handles the main current path at 3.5A continuous, while the P-channel provides reverse-current blocking to prevent one power supply from back-feeding another. Per Infineon's networking power reference designs, the SO-8 footprint allows two IRF7105PBF devices to OR two 12V or 24V supplies within 1 square inch of PCB, with the low RDS(on) keeping the voltage drop below 100mV at full load - far lower than a Schottky diode OR-ing solution.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für IRF7105PBF – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | IRF7105TRPBF | IRF7317TRPBF | IRF7306TRPBF | IRF7341TRPBF | IRF7351TRPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | SO-8 | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same |
| FET Configuration | Dual N + P complementary | Dual N + P complementary - same | Dual N + P complementary - same | Dual N + P complementary - same | Dual N-channel (no P-channel) | Dual N-channel (no P-channel) |
| Total Package Power (W) | 2 W | 2 W - same | 2 W (typical SO-8 dual) | 2 W (typical SO-8 dual) | 2 W (typical SO-8 dual) | 2 W (typical SO-8 dual) |
| Shipping Carrier | Tube | Tape & Reel | Tape & Reel | Tape & Reel | Tape & Reel | Tape & Reel |
| RoHS / Halogen-Free | Yes / Yes | Yes / Yes - same | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
Wichtigste Unterscheidungsmerkmale
- Industry-standard SO-8 footprint with customized leadframe for better thermal performance than stock SO-8 (vs. IRF7317TRPBF)
- Fifth-generation HEXFET process gives the lowest RDS(on) per silicon area in this voltage class (vs. IRF7341TRPBF)
- Complementary N+P topology in one SO-8 package (vs. IRF7351TRPBF)
Designhinweise
Estimated: With total package power dissipation PD = 2W and SO-8 theta_JA around 50 C/W on a 1 oz copper 1 square inch pad (typical JEDEC EIA/JESD51 mounting), junction temperature rise above ambient is roughly 100C. At TA = 25C the TJ reaches ~125C; at TA = 50C the TJ reaches ~150C and the part is at its thermal limit. For continuous dual-channel operation at high current, increase PCB copper area to 2+ square inches on both top and bottom layers, or reduce switching losses by lowering PWM frequency. The customized SO-8 leadframe helps, but it does not eliminate the need for thermal management at full 2W dissipation.
Place the IRF7105PBF on a continuous ground/power copper pour that covers at least 1 square inch of PCB area on the top layer, with thermal vias to inner ground/power planes for additional heat spreading. Keep the gate drive traces short (< 10 mm) and route them away from the drain switching nodes to minimize dv/dt-induced gate coupling. The SO-8 leadframe expects a standard land pattern compatible with JEDEC SO-8 recommendations - do not shrink the pads below the IPC-7351 nominal footprint or the customized leadframe thermal benefit is lost.
Do not drive the P-channel gate positive - it requires VGS in the range of -10V to -4.5V for full enhancement; applying positive gate voltage will forward-bias the P-channel body diode and potentially damage the die. Similarly, do not exceed VGS = +/-20V on either channel or the gate oxide ruptures. When both channels switch simultaneously in a half-bridge, insert a small dead-time (50-200 ns) to prevent shoot-through current that can exceed 10A and destroy the dies. Finally, observe MSL1 handling - even though the part is MSL1, ESD precautions should still be in place because SO-8 MOSFET gates are sensitive to static discharge.
The SO-8 pinout places the two N-channel drain pins (pins 3 and 4) adjacent and the two P-channel drain pins (pins 5 and 6) adjacent, so PCB copper pours naturally connect them. Use wide copper traces (>= 0.5 mm per ampere of continuous current) on these drain pads to minimize voltage drop and thermal rise. Place input/output bypass capacitors within 5 mm of the device pins to limit switching transients, especially in buck converter topologies where the high-side N-channel drain node switches at high dv/dt.
Compliance-Informationen
RoHS compliant and halogen-free per Infineon datasheet. Industrial qualification per Infineon product page (not AEC-Q100 qualified for automotive). MSL1 moisture sensitivity per datasheet.
