IRF9Z34NSTRRPBF - 55V P-Channel HexFET MOSFET | Infineon
Teilenummer: IRF9Z34NSTRRPBF ✗ Abgekündigt| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $2.45 | $2,45 |
| 10 | $2.18 | $21,80 |
| 100 | $1.95 | $195,00 |
| 500 | $1.72 | $860,00 |
| 1.000 | $1.55 | $1.550,00 |
IRF9Z34NSTRRPBF Übersicht
A P-channel power MOSFET is a voltage-controlled majority-carrier device in which the channel is formed by holes rather than electrons. The IRF9Z34N family belongs to the broader power MOSFET taxonomy: power MOSFET -> discrete semiconductor -> switch-mode power conversion building block. The P-channel variant simplifies gate drive in high-side buck and load-switch topologies because the source is tied to the system rail and the gate can be pulled below it by a logic-level signal, eliminating the need for a bootstrap or charge-pump circuit.
Key parametric features include a gate threshold voltage of -2 V to -4 V, a low on-resistance optimized through advanced HEXFET cell design, avalanche-rated energy handling, and fast switching capability. The D2PAK footprint provides a low-profile surface-mount form factor with a large metal tab that acts as the drain, offering both electrical connection and a thermal dissipation path.
Typical applications include high-side load switches, DC motor drivers, solenoid drivers, synchronous rectifier replacements, and battery protection circuits in industrial and consumer designs. The P-channel polarity makes the IRF9Z34NSTRRPBF especially attractive for reverse-battery protection, where it can block current flow when the supply polarity is reversed without additional control circuitry.
When designing with this device, place the gate pull-up resistor directly at the gate pin to prevent inadvertent conduction during power-up, and ensure the source-to-gate dv/dt during switching transitions stays within the datasheet rating. The avalanche rating requires that inductive kick energy be calculated and compared to EAS to guarantee robust operation in motor and solenoid circuits.
This page synthesizes distributor pricing, drop-in D2PAK alternatives, application-specific design notes, and lifecycle observations not consolidated in the manufacturer datasheet, providing engineers a single reference for design-in and second-source decisions.
Drop-in-Alternativen für IRF9Z34NSTRRPBF – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit IRF9Z34NSTRRPBF (gleiche Bauform und Footprint) – abweichend in Mounting Type, RoHS Status.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
IRF9Z34NSTRLPBF
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IRF9Z34NSPBF
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IRF9Z34NPBF
✅ Drop-In✓ Auf Lager
$0.65 / Stück
Datenblatt ansehen →IRF9Z34NSTRRPBF Grenzwerte & elektrische Eigenschaften
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRF9Z34NSTRRPBF |
| Transistortyp | P-Channel MOSFET (HexFET) |
| Drain-to-Source Voltage (Vdss) | -55 V |
| Continuous Drain Current (Id) at Tc=25C | -19 A |
| Gate Threshold Voltage (Vgs(th)) | -2 V to -4 V |
| Power Dissipation (Pd) | 68 W (Tc) |
| Power Dissipation (Ta) | 3.8 W |
| Thermal Resistance, Junction-to-Case (RthJC) | 2.2 K/W (max) |
| Maximum Junction Temperature | 175 °C |
| Gehäuse / Bauform | D2PAK (TO-263-3), 3-pin (2 + Tab) |
| Montageart | Surface Mount |
| Operating Frequency | Optimized for switching below 100 kHz |
| Avalanche Rated | Yes (fully avalanche rated) |
| RoHS-Status | Compliant (Pb-free suffix PBF) |
| Packaging | Tape & Reel (STR suffix) |
IRF9Z34NSTRRPBF Pin-Konfiguration
| Pin 1 | Gate — MOSFET gate control input |
| Pin 2 | Drain — MOSFET drain (electrically common with the metal tab on the back of the package) |
| Pin 3 | Source — MOSFET source (P-channel: connect to higher potential of the controlled rail) |
Sicherer Arbeitsbereich (SOA) - DC
Typische Anwendungen
IRF9Z34NSTRRPBF ist geeignet für 7 Anwendungs: High-Side Load Switch, Reverse-Battery Protection Circuit, DC Motor Drive (Brushed), Solenoid and Valve Driver, Power OR-ing and Load Sharing, Battery Management and Protection, Synchronous Rectifier Replacement.
High-Side Load Switch
The IRF9Z34NSTRRPBF is well-suited to high-side load-switch applications because its P-channel polarity allows direct ground-referenced gate drive from a logic-level signal. With -55 V Vdss and -19 A continuous drain current at Tc=25 °C, the part handles 12 V/24 V automotive and industrial rails with margin. The 2.2 K/W RthJC and D2PAK package enable compact PCB designs using the drain tab as both electrical connection and thermal dissipation path.
Empfohlen
Reverse-Battery Protection Circuit
The IRF9Z34NSTRRPBF is commonly used in reverse-battery protection topologies because its P-channel polarity naturally blocks current when the supply polarity is inverted. With -55 V Vdss and -19 A continuous Id, the device can carry full load while the gate is held to source potential during normal operation. The fully avalanche-rated die absorbs the inductive kick when the supply is reversed, eliminating the need for a discrete protection diode. D2PAK surface-mount construction simplifies PCB assembly.
Empfohlen
DC Motor Drive (Brushed)
The IRF9Z34NSTRRPBF drives small-to-medium brushed DC motors in industrial and consumer applications. Its -19 A continuous current rating and 68 W power dissipation support motors up to several hundred watts, while the 175 °C maximum junction temperature and avalanche rating tolerate the inductive kick of motor commutator switching. The P-channel configuration simplifies H-bridge design by allowing high-side switches to be driven directly from logic without charge-pump circuits.
Empfohlen
Solenoid and Valve Driver
The IRF9Z34NSTRRPBF is well-matched to industrial solenoid and proportional valve driver circuits. Its -55 V Vdss withstands the inductive flyback of de-energizing coils, and the avalanche rating (EAS) handles repetitive inductive transients without external snubbers in many designs. The 2.2 K/W RthJC keeps the junction temperature low even at sustained 68 W dissipation. P-channel polarity enables ground-side gate drive, simplifying isolation requirements in 24 V industrial systems.
Empfohlen
Power OR-ing and Load Sharing
The IRF9Z34NSTRRPBF serves in low-frequency power OR-ing circuits where two supplies meet at a common load. Its low Rds(on) minimizes conduction loss, and the P-channel configuration back-to-back with a second device provides true reverse-current blocking without a Schottky diode. With -19 A continuous current and D2PAK surface-mount package, the part suits redundant supply designs in telecom and server equipment. The 175 °C junction rating supports hot-ambient operation.
Empfohlen
Battery Management and Protection
The IRF9Z34NSTRRPBF supports battery management subsystems as a charge/discharge FET in multi-cell battery packs. Its -55 V Vdss handles transient spikes from inductive loads, and -19 A continuous current suits medium-capacity packs. The P-channel configuration simplifies the high-side disconnect path in 12 V/24 V battery systems. The fully avalanche-rated die absorbs fault energy during short-circuit events, and the 175 °C maximum junction temperature tolerates thermal stress during fault clearing.
Empfohlen
Synchronous Rectifier Replacement
The IRF9Z34NSTRRPBF can replace Schottky rectifiers in low-frequency synchronous rectification paths where the lower forward drop of a MOSFET outweighs the gate drive complexity. At -19 A continuous Id, the part handles secondary-side rectification in 12 V/24 V buck converters. The P-channel polarity allows ground-referenced gate drive in some topologies, and the avalanche rating tolerates the dead-time cross-conduction transient better than a Schottky diode.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für IRF9Z34NSTRRPBF – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | IRF9Z34NSTRLPBF | IRF9Z34NSPBF | IRF9Z34NPBF |
|---|---|---|---|---|
| Package | D2PAK (TO-263-3) | D2PAK (TO-263-3) - same | D2PAK (TO-263-3) - same | TO-220-3 - same pin function (G-D-S), through-hole |
| Brand | Infineon | Infineon | Infineon | Infineon |
| Vdss (V) | -55 V | -55 V | -55 V | -55 V |
| Continuous Id (A) | -19 A (Tc=25C) | -19 A (Tc=25C) | -19 A (Tc=25C) | -19 A (Tc=25C) |
| Vgs(th) (V) | -2 to -4 V | -2 to -4 V | -2 to -4 V | -2 to -4 V |
| Pd (W) at Tc | 68 W | 68 W | 68 W | 68 W |
| RthJC (K/W max) | 2.2 | 2.2 | 2.2 | 2.2 |
| Max Junction Temp (C) | 175 | 175 | 175 | 175 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Through-Hole |
Wichtigste Unterscheidungsmerkmale
- Active product status with confirmed Pb-free finish and broad distributor stock (vs. IRF9Z34NSTRLPBF)
- Identical die and electrical performance, differing only by reel orientation (vs. IRF9Z34NSPBF)
- Surface-mount D2PAK vs through-hole TO-220 in same die (vs. IRF9Z34NPBF)
Designhinweise
Estimated: at Pd = 7 W continuous dissipation in the D2PAK package, the junction temperature rise is approximately 15.4 °C above case temperature (7 W × 2.2 K/W). With a 25 °C ambient and case-to-ambient resistance dominated by the PCB copper pour, total Tj rise of ~50 °C is typical for a 1 sq inch drain pad with thermal vias. For Pd above 20 W, increase the drain copper area to at least 4 sq inches and add a topside thermal plane stitched with 0.3 mm vias on 1.2 mm pitch. Do not rely on the plastic package body for heat removal - the metal tab is the dominant thermal path.
Use a D2PAK land pattern compliant with IPC-7520 or the Infineon application note footprint. Place a minimum of six 0.3 mm thermal vias in the drain pad, tented or filled to prevent solder wicking during reflow. Keep gate and source traces short to minimize parasitic inductance - a gate resistor of 10-100 Ω dampens ringing on the gate node. Add a 10 kΩ gate-to-source pull-down resistor to prevent inadvertent turn-on during power-up transients. Per the datasheet, observe 1 mm clearance between the drain tab and any signal trace to maintain voltage isolation.
Do not exceed -55 V Vdss even for transient spikes - inductive flyback on motor and solenoid loads routinely exceeds 2x the supply voltage. Add a TVS or RCD snubber sized to clamp the spike below 44 V (80% of Vdss) for design margin. For P-channel operation, never allow Vgs to exceed ±20 V - the gate oxide is thin and ESD-sensitive. The 'N' in IRF9Z34N denotes the advanced HEXFET process generation; substituting with earlier IRF9Z34 (no N) parts requires complete parametric re-verification.
The IRF9Z34NSTRRPBF's gate charge Qg and Miller plateau voltage directly affect switching loss in high-frequency designs. For switching above 50 kHz, a dedicated gate driver (such as the FAN7392 or TC4427) is recommended because the part's high Qg cannot be driven quickly by a logic-level GPIO. Source inductance degrades switching performance significantly - place the source-sense return path directly to the source pin, not to the load ground, to avoid dv/dt-induced turn-on.
Compliance-Informationen
PBF suffix denotes Pb-free lead finish and RoHS conformity. AEC-Q100 qualification status not stated in verified data; consult Infineon automotive-grade product line for qualified equivalents if required.
