IRLU024NPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon
MPN: IRLU024NPBF ✓ Hoạt độngIRLU024NPBF Tóm tắt
A HEXFET power MOSFET is a specific class of N-channel enhancement-mode MOSFET built on International Rectifier's (now Infineon) HEXFET cell geometry, which uses a hexagonal cellular layout to maximize channel width per unit silicon area. This geometry produces very low on-resistance, high peak current capability, and rugged avalanche-rated switching behavior. The IRLU024NPBF is the logic-level variant of the 55 V family, meaning VGS(th) is reduced and the device can be fully enhanced at gate voltages compatible with 5 V microcontrollers, gate drivers, and TTL logic outputs - eliminating the need for a separate gate-drive supply in many low-side switch applications.
Key specifications include a continuous drain current of 17 A at TC = 25 °C, pulsed drain current handling suitable for inrush and motor-start transients, an on-resistance of 0.065 Ω maximum, and a total gate charge of approximately 10 nC that enables fast switching at frequencies from DC to several hundred kHz. Thermal resistance junction-to-case is rated at 3.3 °C/W and junction-to-ambient at 110 °C/W (or 50 °C/W PCB-mounted per the datasheet), giving designers a clear thermal budget for heatsink selection. The device is qualified to JEDEC standards and operates over the industrial -55 °C to +175 °C junction temperature range.
Typical applications include low-side switching in DC motor drives, solenoid and relay drivers, automotive 12 V load switching (fuel injectors, lamps, fans), power-OR'ing circuits, battery protection, synchronous-rectifier secondary-side switches, and high-efficiency DC-DC converter low-side FETs. Its logic-level gate and TO-251AA package make it especially suited for through-hole designs where thermal dissipation and mechanical ruggedness are required.
When designing with this device, calculate worst-case conduction loss as ID² × RDS(on) and ensure TC stays below 150 °C using the datasheet thermal derating curve. For switching applications, add a small gate-source resistor (10-100 Ω) to suppress ringing and a flyback or snubber diode across inductive loads to clamp the drain transient below the 55 V VDS rating.
This page synthesizes distributor pricing, drop-in IPAK alternatives, and practical thermal and gate-drive design guidance not found in the standalone datasheet PDF.
Bộ thay thế dễ dàng lắp đặt cho IRLU024NPBF — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IRLU024NPBF (cùng hình factor và footprint) — khác nhau ở Package, Technology, Total Gate Charge (Qg), Continuous Drain Current (ID) at TC=25C, FET Type.
IRLR024NPBF
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRF9Z34NPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRF4905PBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRFR3710ZTRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRFR5505TRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRFR9024NTRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRLU024NPBF Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRLU024NPBF |
| FET Type | N-Channel, Logic-Level |
| Technology | HEXFET Power MOSFET (5th generation) |
| Drain-to-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (ID) at TC=25C | 17 A |
| On-Resistance RDS(on) max at VGS=10V | 65 mOhm |
| Total Gate Charge (Qg) | 10 nC (typical, per listing) |
| Power Dissipation (PD) at TC=25C | 45 W |
| Thermal Resistance Junction-to-Case (RthJC) | 3.3 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | 110 C/W (50 C/W PCB-mounted) |
| Nhiệt độ mối nối hoạt động | -55C to +175C |
| Hộp | IPAK (TO-251AA), Through Hole |
| Kiểu lắp đặt | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free plating) |
| Qualification | JEDEC standard |
| Gate Drive Voltage (optimized) | 10 V (capable of 4.5 V) |
Cấu hình chân IRLU024NPBF
| Chân 1 | Gate — Gate drive input (logic-level, 4.5V-10V) |
| Chân 2 | Drain — Drain terminal (also connected to tab/heatsink) |
| Chân 3 | Source — Source terminal |
Khu vực hoạt động an toàn (DC)
Ứng dụng tiêu biểu
IRLU024NPBF phù hợp cho 6 Áp dụngs: Low-Side DC Motor Driver, Automotive 12 V Load Switch, Solenoid and Relay Driver, Synchronous Rectifier (Low-Side), Battery Protection / Power Path, LED Lighting Driver Switch.
Low-Side DC Motor Driver
The IRLU024NPBF is a strong fit for low-side PWM switching of small DC motors (12-24 V, up to ~10 A continuous) in industrial automation, robotics, and appliance control. Its logic-level gate (4.5 V capable) drives directly from a microcontroller or dedicated gate-driver IC such as the Infineon BTS3050EJXUMA1, eliminating the need for a charge pump. The 65 mΩ RDS(on) keeps conduction loss below 1 W at 5 A continuous, and the 55 V VDS rating provides ample headroom against 24 V bus transients and motor back-EMF. Mount in IPAK with a small heatsink to sustain 2-3 W dissipation in free air.
Được đề xuất
Automotive 12 V Load Switch
The IRLU024NPBF suits automotive 12 V low-side load switching for lamps, fuel injectors, solenoids, and HVAC actuators drawing up to 17 A. Its 55 V VDS comfortably absorbs 12 V load-dump transients (35-40 V), and the logic-level gate interfaces directly with automotive 5 V microcontrollers. Through-hole IPAK packaging withstands vibration and thermal cycling better than SMD equivalents, and the PBF-suffix lead-free plating meets automotive environmental requirements. Designers add a flyback diode across inductive loads and a 100 Ω gate resistor for ringing control.
Được đề xuất
Solenoid and Relay Driver
For industrial solenoid valves, pneumatic actuators, and electromechanical relays in 24 V control systems, the IRLU024NPBF provides fast, low-loss switching. Its 10 nC typical Qg enables sub-microsecond switching at 1 kHz PWM, reducing solenoid heating and allowing proportional valve control. The 17 A continuous rating covers most 24 V industrial solenoid coils drawing 1-3 A continuous with inrush transients to 8 A. A freewheeling diode (e.g., UF3007) across the solenoid is essential; the IPAK package also serves as a heatsink tab when bolted to a small aluminum plate.
Được đề xuất
Synchronous Rectifier (Low-Side)
The IRLU024NPBF works as a secondary-side low-side synchronous rectifier in isolated DC-DC converters and forward-derived topologies operating below 55 V. Its low 65 mΩ RDS(on) reduces conduction loss compared to Schottky diodes, especially above 3 A load. The logic-level gate interfaces directly with synchronous-rectifier controller outputs. At frequencies above 200 kHz, designers evaluate Qrr and body-diode reverse-recovery - fifth-generation HEXFET behavior is acceptable for most telecom and industrial bus converters up to 5 A output.
Được đề xuất
Battery Protection / Power Path
In multi-cell battery packs and portable equipment, the IRLU024NPBF serves as a power-path or reverse-polarity protection switch. Its 55 V VDS exceeds typical 4S Li-ion (16.8 V max) and 6S NiMH (12 V max) pack voltages, while the 17 A ID covers peak discharge pulses. Low RDS(on) minimizes voltage drop during high-current discharge, extending usable battery capacity. The logic-level gate allows direct control from a battery-management IC or fuel-gauge output, and the IPAK footprint supports through-hole constructions common in battery-pack assemblies.
Được đề xuất
LED Lighting Driver Switch
The IRLU024NPBF is suitable for switching constant-current LED strings in architectural lighting, automotive tail-light drivers, and 24 V industrial luminaires. Its 55 V VDS supports long LED strings up to 14-16 high-brightness LEDs in series, while 17 A ID handles high-power LED arrays at full PWM dimming duty. The 4.5 V capable gate drives directly from 5 V microcontroller PWM outputs, and the IPAK package provides thermal headroom for continuous 2-3 W dissipation when mounted with modest copper area. Use it in low-side PWM dimming configurations up to a few kHz.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IRLU024NPBF — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IRLR024NPBF | IRF9Z34NPBF | IRF4905PBF | IRFR3710ZTRPBF | IRFR5505TRPBF | IRFR9024NTRPBF |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | TO-251AA (IPAK, through-hole) | TO-252AA (DPAK, SMD) | TO-251AA (IPAK) - same | TO-251AA (IPAK) - same | TO-252AA (DPAK, SMD) | TO-252AA (DPAK, SMD) | TO-252AA (DPAK, SMD) |
| FET Type / Polarity | N-Channel | N-Channel | P-Channel | P-Channel | N-Channel | P-Channel | P-Channel |
| VDS (Drain-Source Voltage) | 55 V | 55 V | -55 V | -55 V | 100 V | -55 V | -55 V |
| Continuous Drain Current (ID) | 17 A | 17 A | -17 A | -74 A | 56 A | -18 A | -11 A |
| RDS(on) max at VGS=10V | 65 mOhm | 65 mOhm | 140 mOhm | 20 mOhm | 9 mOhm | 110 mOhm | 175 mOhm |
| Power Dissipation (PD) | 45 W | 45 W | 45 W | 130 W | 140 W | 48 W | 38 W |
| Gate Drive Voltage | 10 V optimized (4.5 V capable, logic-level) | 10 V optimized (4.5 V capable) | 10 V standard | 10 V standard | 10 V standard | 10 V standard | 10 V standard |
| Unit Price (qty 1000, approx) | $0.61 | $0.58 | $0.92 | $1.85 | $0.79 | $1.05 | $0.68 |
Bảo phân biệt quan trọng
- Through-hole IPAK packaging for rugged mechanical construction (vsIRLR024NPBF)
- Logic-level gate compatible with 5 V microcontrollers (vsIRF4905PBF)
- Lower price and broader inventory than P-channel equivalents in same package (vsIRFR5505TRPBF)
Ghi chú thiết kế
The IPAK (TO-251AA) package is rated 45 W at TC = 25 °C with RthJC = 3.3 °C/W. In free air (RthJA ≈ 110 °C/W) the IRLU024NPBF dissipates only about 1.4 W max before TJ hits 175 °C - usable but tight. Mount the tab to a PCB copper area of at least 200 mm², or bolt to a clip-on heatsink, to drop RthJA to 50 °C/W or lower and sustain 2-3 W continuous dissipation. Estimated: at 5 A continuous load and RDS(on) = 65 mΩ, conduction loss is 5² × 0.065 ≈ 1.6 W, manageable with modest copper.
Keep the gate-loop (gate-to-source return) physically short - typically under 10 mm - to suppress gate-oscillation on a logic-level MOSFET. Place a 10-100 Ω gate-source resistor in parallel with the gate-source path (physically close to the package) to damp high-frequency ringing caused by the gate-drain capacitance (Miller effect). For switching above 100 kHz, add a small RC snubber (e.g., 10 Ω + 1 nF) across drain-source if ringing exceeds 10% of VDS.
Do not drive the IRLU024NPBF gate from a high-impedance source - logic-level HEXFETs have low VGS(th) (around 1-2 V) and are susceptible to accidental turn-on from dv/dt-induced Miller current on the drain. Always keep the gate pulled below VGS(th) when the device should be off, either with a pull-down resistor (10-100 kΩ) or by holding the driver output low. For inductive loads, add a freewheeling diode rated above the peak forward current with reverse recovery faster than 100 ns; otherwise, the body diode reverse-recovery can spike VDS above 55 V.
Thông tin tuân thủ
PBF suffix denotes lead-free matte-tin plating per Infineon part-numbering convention. JEDEC-qualified per datasheet front page. Not AEC-Q100 qualified - automotive designers should verify qualification status with Infineon or select an automotive-grade equivalent.
