ISZ15EP15LMATMA1 - 150V P-Channel OptiMOS MOSFET | Infineon
Teilenummer: ISZ15EP15LMATMA1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0.88 | $0,88 |
| 10 | $0.69 | $6,90 |
| 100 | $0.52 | $52,00 |
| 500 | $0.42 | $210,00 |
| 1.000 | $0.34 | $340,00 |
| 5.000 | $0.28 | $1.400,00 |
ISZ15EP15LMATMA1 Übersicht
A P-channel MOSFET is a type of field-effect transistor (FET) in which the conducting channel is formed by negative charge carriers (holes) when a negative gate-source voltage is applied relative to the source terminal. P-channel MOSFETs occupy the high-side switch position in low-side-grounded systems and simplify gate drive in negative-rail or load-switching applications because the gate can be referenced to the same ground as the upstream controller. Within the broader taxonomy, this part belongs to the discrete MOSFET family, which itself is a subclass of power semiconductors under the discrete semiconductor hierarchy. The OptiMOS designation indicates Infineon's trench-gate process optimized for low on-resistance per unit silicon area.
Key features of the ISZ15EP15LMATMA1 include the trench-gate OptiMOS process for low RDS(on) per area, a logic-level compatible gate drive that simplifies interface to 3.3 V or 5 V microcontrollers through an external charge pump or gate driver, a maximum drain-source voltage of -150 V for high-side switching in 48 V, 60 V, or 100 V buses, and a thermally enhanced PQFN 3.3 x 3.3 package with an exposed die pad (EP) that lowers thermal resistance and enables PCB heatsinking through copper pours.
Typical applications include high-side load switches in industrial 48-100 V systems, battery management systems for protection FETs in 24-96 V battery packs, USB-PD and e-Marker power path switching, hot-swap controllers, and adapter or charger reverse-polarity protection. The compact PQFN footprint also makes it attractive in space-constrained DC/DC converters and motor pre-driver stages.
Designers should pay attention to gate drive headroom. Because the gate-source threshold is negative for a P-channel MOSFET, the device requires the gate to be pulled at least 4-6 V below the source to fully enhance. A small gate-source resistor (10-100 kOhm) is recommended to prevent floating-gate turn-on during transients, and the exposed pad must be soldered to a sufficiently large copper pour to manage the 2.5 W PCB dissipation rating.
This page synthesizes Infineon OptiMOS P-channel parametric data, distributor pricing, drop-in alternatives, and practical design guidance that go beyond the manufacturer datasheet alone.
Drop-in-Alternativen für ISZ15EP15LMATMA1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit ISZ15EP15LMATMA1 (gleiche Bauform und Footprint) – abweichend in Operating Temperature Range, Package, Technology, MSL Level, Drain-Source Voltage (VDS).
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
ISZ028N03LF2SATMA1
✅ Drop-In✓ Auf Lager
$0.49 / Stück
Datenblatt ansehen →ISC011N04NM7VATMA1
✅ Drop-In✓ Auf Lager
$0.41 / Stück
Datenblatt ansehen →IPC50N04S5L5R5ATMA1
✅ Drop-In✓ Auf Lager
$0.36 / Stück
Datenblatt ansehen →BSC050N04LSGATMA1
✅ Drop-In✓ Auf Lager
$0.41 / Stück
Datenblatt ansehen →IQE036N08NM6CGATMA1
✅ Drop-In✓ Auf Lager
$0.82 / Stück
Datenblatt ansehen →ISZ15EP15LMATMA1 Grenzwerte & elektrische Eigenschaften
| Manufacturer | Infineon Technologies |
| Series | OptiMOS |
| Polarity | P-Channel |
| Drain-Source Voltage (VDS) max | -150 V |
| Drain-Source On-Resistance (RDS(on)) max | 1500 mOhm @ VGS = -10 V |
| Continuous Drain Current (ID) at TA=25C | 820 mA |
| Continuous Drain Current (ID) at TC=25C | 2.7 A |
| Power Dissipation (PD) at TA=25C | 2.5 W |
| Power Dissipation (PD) at TC=25C | 26.3 W |
| Technology | OptiMOS trench-gate |
| Gehäuse | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) with exposed pad |
| Montageart | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C (junction) |
| RoHS-Status | Compliant |
| MSL-Level | 1 |
| Packaging | Tape and Reel (T&R) |
ISZ15EP15LMATMA1 Pin-Konfiguration
| Pin 1 | Source — P-channel source terminal (connected to positive rail in high-side configuration) |
| Pin 2 | Source — Source terminal (pin 2 of 8) |
| Pin 3 | Gate — Gate control input - drive 10 V below source to fully enhance |
| Pin 4 | Source — Source terminal (pin 4 of 8) |
| Pin 5 | Drain — Drain terminal (connected to load) |
| Pin 6 | Source — Source terminal (pin 6 of 8) |
| Pin 7 | Source — Source terminal (pin 7 of 8) |
| Pin 8 | Drain — Drain terminal (pin 8 of 8) |
| Pin EP | Exposed Pad — Thermal pad, internally connected to drain - must be soldered to copper pour |
Sicherer Arbeitsbereich (DC, TA=25C)
Typische Anwendungen
ISZ15EP15LMATMA1 ist geeignet für 6 Anwendungs: High-Side Load Switch in 48V Industrial Systems, Battery Protection and Discharge FET in 24-96V Battery Packs, USB-PD and Charger Reverse-Polarity Protection, Hot-Swap Controller High-Side Pass FET, Motor Driver Pre-Driver High-Side Switch, Adapter and Power Supply Reverse-Protection Switch.
High-Side Load Switch in 48V Industrial Systems
The ISZ15EP15LMATMA1's 150 V VDS rating provides ample headroom above the 48 V industrial bus, while the P-channel polarity simplifies gate drive because the source is tied to the 48 V rail and the gate can be pulled to ground by an open-drain controller. Its 1500 mOhm RDS(on) at VGS -10 V yields conduction losses around 1 W at 820 mA load, manageable in the PG-TSDSON-8 EP package with a 1 square-inch copper pour. Compared to N-channel high-side switches, no bootstrap capacitor is required, reducing BOM count and complexity.
Empfohlen
Battery Protection and Discharge FET in 24-96V Battery Packs
In lithium-ion battery management systems for e-bikes, light EVs, and 96 V e-mobility packs, the ISZ15EP15LMATMA1 can serve as a high-side P-channel protection FET that isolates the pack from the load during fault conditions. The 150 V VDS comfortably exceeds the maximum pack voltage including transient overshoot, while the 2.7 A pulsed drain current handles inrush during connection. Gate drive is straightforward: a small charge pump or gate driver pulls the gate 10 V below the source to fully enhance the part.
Empfohlen
USB-PD and Charger Reverse-Polarity Protection
USB Power Delivery adapters and laptop chargers commonly use a P-channel MOSFET at the input to block reverse-current flow when an unpowered device is connected to a powered source. The ISZ15EP15LMATMA1's 150 V rating covers the rare case of inductive kickback or hot-plug overshoot on the DC input, while the 820 mA continuous rating supports 60-100 W PD adapters. Its low gate charge minimizes switching losses during PD voltage transitions.
Empfohlen
Hot-Swap Controller High-Side Pass FET
In -48 V telecom and 60-100 V industrial hot-swap applications, the ISZ15EP15LMATMA1 can act as the high-side inrush-limiting element when paired with a hot-swap controller. Its P-channel configuration eliminates the bootstrap supply needed for an N-channel high-side FET. The exposed thermal pad of the PG-TSDSON-8 package provides a low thermal-resistance path, allowing sustained 2.5 W dissipation during the inrush transient.
Empfohlen
Motor Driver Pre-Driver High-Side Switch
In low-power BLDC or stepper motor pre-driver stages operating from 48-100 V bus rails, the ISZ15EP15LMATMA1 can serve as a high-side disconnect switch that isolates the motor from the bus during fault conditions or low-power standby. The 150 V rating covers regenerative voltage spikes from the motor inductance, and the PG-TSDSON-8 EP package fits alongside motor driver ICs in compact PCB layouts.
Empfohlen
Adapter and Power Supply Reverse-Protection Switch
The ISZ15EP15LMATMA1 is well-suited as a reverse-polarity protection element at the input of 24-100 V industrial power supplies and PoE injectors. When wired with source-to-Vin and drain-to-load, the body diode conducts during normal operation and the P-channel FET, once enhanced by pulling its gate to ground, shorts out the diode to reduce forward drop to I*RDS(on). At 1 A load the conduction loss is around 1.5 W, within the 2.5 W PCB rating.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für ISZ15EP15LMATMA1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | ISZ028N03LF2SATMA1 | ISC011N04NM7VATMA1 | IPC50N04S5L5R5ATMA1 | BSC050N04LSGATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Polarity | P-Channel | P-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| VDS max | -150 V | -30 V | 40 V | 40 V | 40 V | 80 V |
| RDS(on) max | 1500 mOhm @ VGS -10 V | 2.8 mOhm @ VGS -10 V | 1.1 mOhm @ VGS 10 V | 5.5 mOhm @ VGS 10 V | 5.0 mOhm @ VGS 10 V | 3.6 mOhm @ VGS 10 V |
| Technology | OptiMOS trench-gate | OptiMOS | OptiMOS 7 | OptiMOS 5 | OptiMOS | OptiMOS 6 |
Wichtigste Unterscheidungsmerkmale
- 150 V VDS rating covers 48-100 V industrial and battery systems in a single part (vs. ISZ028N03LF2SATMA1)
- P-channel polarity eliminates bootstrap supply for high-side switching (vs. ISC011N04NM7VATMA1 (N-channel))
- Logic-level gate drive compatible with MCU output via simple charge pump (vs. IPC50N04S5L5R5ATMA1 (N-channel 40 V))
Designhinweise
The PG-TSDSON-8 exposed pad must be soldered to a copper pour with thermal vias to achieve the 2.5 W PCB dissipation rating. Estimated: at 820 mA continuous drain current and 1.5 W conduction loss (I^2 * RDS(on) = 0.82^2 * 1.5), the junction-to-ambient thermal resistance of approximately 50 C/W would yield a 75C temperature rise above ambient. A 1 square-inch copper pour on the top layer plus 4-8 thermal vias to an internal ground plane drops theta_JA to roughly 40 C/W, keeping Tj well within the 150C maximum.
Because the ISZ15EP15LMATMA1 is a P-channel MOSFET, the gate must be driven at least 4-6 V BELOW the source to enhance, and pulled up to within 1-2 V of the source to turn off. A 10-100 kOhm gate-source pull-up resistor prevents floating-gate turn-on during MCU reset. For logic-level microcontrollers (3.3 V), use a small gate-driver IC or discrete charge pump to generate the 10 V gate-source bias. Never let VGS exceed +/-20 V absolute maximum.
Estimated thermal calculation: at full 820 mA TA=25C rating with VGS=-10 V, the steady-state conduction loss equals I^2 * RDS(on) = 0.82^2 * 1.5 = approximately 1.0 W. The PG-TSDSON-8 EP package has a typical theta_JA of 50 C/W on a 1 square-inch 2-layer PCB, resulting in a junction temperature rise of 50C above ambient. At TA=70C ambient, Tj would reach 120C - within the 150C rating but with reduced margin. For continuous operation at full current in high-ambient-temperature environments, derate to 500-600 mA or add a heatsink.
Compliance-Informationen
RoHS and REACH compliance per Infineon product page. Not AEC-Q100 qualified - check ISZ automotive-grade variants for vehicle applications. Halogen-free per Infineon OptiMOS family datasheet.
