K3LKJKJ0CM-MFCP - 24Gb LPDDR5 DRAM 6400Mbps | Samsung
Teilenummer: K3LKJKJ0CM-MFCP ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $28.5 | $28,50 |
| 10 | $26.8 | $268,00 |
| 100 | $24.9 | $2.490,00 |
| 500 | $23.2 | $11.600,00 |
| 1.000 | $21.9 | $21.900,00 |
K3LKJKJ0CM-MFCP Übersicht
LPDDR5 is the fifth generation of low-power synchronous DRAM defined by JEDEC, positioned within the memory hierarchy as mobile DRAM -> LPDDR family -> SDRAM -> semiconductor memory. It is optimized for battery-powered, thermally constrained systems such as smartphones, tablets, and, in the case of this part number, automotive platforms that require high bandwidth with strict power budgets.
Key features of the K3LKJKJ0CM-MFCP include a 24 Gbit (3 GB) die density, a 6400 Mbps data rate (the JEDEC LPDDR5 target speed enabling aggregate transfers up to 51.2 GB/s on 64-bit bus systems), and the triple-supply architecture (1.8V / 1.05V / 0.9V) that separates core and I/O domains for dynamic voltage scaling and power savings of roughly 20% versus LPDDR4X. The 315-ball FBGA (Fine-Pitch Ball Grid Array) package supports high-density surface-mount assembly typical of mobile and automotive memory modules.
According to Samsung Semiconductor documentation, LPDDR5 devices of this class add architectural improvements over LPDDR4X, including bank group mode, a replica-based DFE (decision feedback equalization) receiver, and command/address encoding, all of which reduce switching activity and improve signal integrity at 6400 Mbps.
Typical applications for this component include automotive ADAS and infotainment memory subsystems, high-performance mobile computing, 5G modems, and edge AI accelerators that require high memory bandwidth in a compact footprint.
When designing with this device, verify the exact ball map and speed bin against the official Samsung datasheet for the MFCP package, and pair it with an SoC memory controller that supports the full LPDDR5 protocol, including WCK and DFE training sequences.
This page consolidates distributor sourcing data, drop-in alternative options, and practical design notes not found on the manufacturer's product page.
Drop-in-Alternativen für K3LKJKJ0CM-MFCP – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit K3LKJKJ0CM-MFCP (gleiche Bauform und Footprint) – abweichend in Package, Interface, Density, Organization, Memory Type.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
K3LK8L80CM-MGCT
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
Preis auf Anfrage
Datenblatt ansehen →K3LKCKC0BM-MGCP
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$65.625 / Stück
Datenblatt ansehen →K3LKBKB0BM-MGCP
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$46.62 / Stück
Datenblatt ansehen →K3LKJKJ0CM-MFCP Grenzwerte & elektrische Eigenschaften
| Manufacturer | Samsung Semiconductor, Inc. |
| Product Family | LPDDR5 (Low Power Double Data Rate 5) |
| Density | 24 Gbit (3 GB) |
| Datenrate | 6400 Mbps |
| Gehäuse | 315-ball FBGA |
| Supply Voltage VDD2 | 1.8 V |
| Supply Voltage VDD1 | 1.05 V |
| Supply Voltage VDDQ | 0.9 V |
| Speichertyp | LPDDR5 SDRAM |
| Montageart | Surface Mount (BGA) |
| Operating Mode | Automotive-grade LPDDR5 (per Samsung automotive LPDDR5 listing) |
K3LKJKJ0CM-MFCP 315-ball fbga Pinbelegungsleitfaden
Pinbelegung für K3LKJKJ0CM-MFCP (315-ball fbga-Gehäuse). Dieser digitale IC umfasst GPIO, Kommunikationsschnittstellen (UART, SPI, I2C) und Versorgungspins. Alternative Pin-Funktionen und Konfigurationsoptionen entnehmen Sie dem Herstellerdatenblatt. Unverzichtbar für Embedded-System-Design und PCB-Layout.
Keine detaillierten Pinbelegungsdaten verfügbar für K3LKJKJ0CM-MFCP.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
K3LKJKJ0CM-MFCP ist geeignet für 6 Anwendungs: Automotive ADAS Domain Controllers, Automotive Infotainment and Cockpit Systems, High-Performance Smartphones and Tablets, 5G Modems and Network Edge Devices, Edge AI Accelerators and Robotics, Industrial Gateways and Telematics.
Automotive ADAS Domain Controllers
The K3LKJKJ0CM-MFCP fits automotive ADAS domain controllers because it combines 24 Gbit density with 6400 Mbps pin speed in Samsung's automotive LPDDR5 family, providing the memory bandwidth that camera, radar, and lidar fusion pipelines demand. At 6400 Mbps, a 64-bit bus delivers about 51.2 GB/s of aggregate bandwidth, sufficient for feeding multiple high-resolution sensor streams into perception accelerators. The triple-rail power design (1.8V/1.05V/0.9V VDDQ) allows the SoC power tree to scale VDDQ dynamically, cutting memory power during low-activity driving phases. The part is used as the main DRAM beside the ADAS SoC, trained at boot via LPDDR5 read/write leveling; designers must confirm the AEC temperature grade in the official datasheet.
Empfohlen
Automotive Infotainment and Cockpit Systems
Digital cockpit and infotainment SoCs drive multiple displays, navigation, and voice assistants concurrently, and the K3LKJKJ0CM-MFCP supplies the frame-buffer and application memory for these workloads. Its 6400 Mbps LPDDR5 interface provides the headroom for 4K display composition and simultaneous rear-camera input, while the 24 Gbit (3 GB) density accommodates multi-instance HMI software. Samsung lists this part in its automotive LPDDR5 table (January 2026), indicating suitability for the automotive thermal and reliability environment. Compared with LPDDR4X, LPDDR5's roughly 20% power saving reduces cockpit heat dissipation, easing enclosure thermal design in dashboards with limited airflow.
Empfohlen
High-Performance Smartphones and Tablets
Flagship mobile SoCs pair with LPDDR5 for application memory, and the 6400 Mbps K3LKJKJ0CM-MFCP supports the bandwidth needed for computational photography, on-device AI inference, and multitasking. Samsung's LPDDR5 platform reaches 51.2 GB/s aggregate transfer on 64-bit buses, roughly 50% above LPDDR4X-4266, directly improving frame rates in camera pipelines and large-language-model inference latency. The 0.9V VDDQ rail and LPDDR5's dynamic voltage scaling cut DRAM active power by about 20% versus the previous generation, extending battery life in a form factor (315-ball FBGA) designed for dense stacked or side-by-side POP-style mounting on mobile PCBs.
Empfohlen
5G Modems and Network Edge Devices
5G baseband processors and edge network appliances require high-throughput DRAM to buffer packet streams and run MAC-layer processing, and the K3LKJKJ0CM-MFCP's 6400 Mbps interface keeps pace with multi-gigabit radio data rates. The 24 Gbit density supports large buffer descriptors and firmware-working sets without external controllers. Samsung LPDDR5's bank-group architecture and DFE-based receiver maintain signal integrity at speed, which matters in edge hardware with constrained layer stackups. Because this LPDDR5 device sits in the automotive-qualified family, it also suits ruggedized roadside units and vehicle-to-infrastructure (V2X) edge nodes exposed to wide temperature ranges.
Empfohlen
Edge AI Accelerators and Robotics
Edge AI modules for robotics and industrial vision need bandwidth-hungry DRAM close to the NPU, and the K3LKJKJ0CM-MFCP provides 24 Gbit of LPDDR5 at 6400 Mbps, feeding activation tensors and model weights at up to 51.2 GB/s on a wide bus. The automotive-family qualification makes it appropriate for autonomous mobile robots and factory AGVs where reliability requirements approach automotive levels. Its triple supply rails (1.8V/1.05V/0.9V) let designers balance performance and thermal budget in sealed enclosures without fans. Boot-time LPDDR5 training must be supported by the companion SoC's memory controller, so verify controller compatibility during platform selection.
Empfohlen
Industrial Gateways and Telematics
Industrial IoT gateways and vehicle telematics units log sensor data, run local analytics, and maintain secure communication stacks, all of which benefit from the K3LKJKJ0CM-MFCP's combination of 3 GB capacity and 6400 Mbps bandwidth. Samsung's automotive LPDDR5 listing supports use in extended-temperature telematics hardware, and LPDDR5's power efficiency suits always-on designs that monitor fleets continuously. The 315-ball FBGA package mounts on standard SMD lines, simplifying manufacturing. For designs where cost dominates and bandwidth needs are modest, the same Samsung LPDDR5 family offers smaller-density SKUs on related packages, letting procurement consolidate suppliers while matching memory size to the application.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für K3LKJKJ0CM-MFCP – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | K3LK8L80CM-MGCT | K3LKCKC0BM-MGCP | K3LKBKB0BM-MGCP |
|---|---|---|---|---|
| Package | 315-ball FBGA | FBGA (LPDDR5 family - verify ball count) | FBGA (LPDDR5 family - verify ball count) | FBGA (LPDDR5 family - verify ball count) |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Type | LPDDR5 | LPDDR5 | LPDDR5 | LPDDR5 |
| VDD2 / VDD1 / VDDQ | 1.8 V / 1.05 V / 0.9 V | 1.8 V / 1.05 V / 0.9 V (LPDDR5 standard) | 1.8 V / 1.05 V / 0.9 V (LPDDR5 standard) | 1.8 V / 1.05 V / 0.9 V (LPDDR5 standard) |
Wichtigste Unterscheidungsmerkmale
- Maximum JEDEC LPDDR5 speed bin (vs. K3LK8L80CM-MGCT)
- Automotive-family qualification (vs. Consumer-grade LPDDR5 parts)
- Triple-rail power architecture (vs. LPDDR4X alternatives)
Designhinweise
The K3LKJKJ0CM-MFCP requires three supply rails: 1.8V (VDD2), 1.05V (VDD1), and 0.9V (VDDQ). Power each rail with a dedicated buck converter capable of handling LPDDR5 peak currents during simultaneous read/write bursts; sequencing between VDD2 and VDDQ must follow the Samsung datasheet power-up procedure to avoid latch-up. Estimated: a 64-bit LPDDR5-6400 interface at full utilization can draw several hundred milliamps on VDDQ, so budget the 0.9V rail with at least 50% headroom and place bulk capacitance near the regulator output.
At 6400 Mbps, LPDDR5 signal integrity dominates the design. Match trace lengths within the datasheet skew budget for CA, DQ, DQS, and WCK groups, use ODT settings from the controller training algorithm, and reference all high-speed traces to a solid ground plane. The 315-ball FBGA requires via-in-pad or fan-out microvias; keep stub lengths minimal. Follow the Samsung LPDDR5 layout application note for impedance targets (typically 40 ohms for DQ at these rates) and simulate the eye diagram at the corner process points.
The full datasheet for this exact part number is distributed under NDA; do not copy ball maps or timing parameters from other LPDDR5 part numbers or vendors, as they differ between densities and packages. The MFCP suffix defines the specific package and revision. Verify the automotive temperature grade, refresh scheme, and AC timings with the official Samsung document before tape-out, and reserve controller firmware flexibility for different density organization in case of supply substitutions.
Compliance-Informationen
Compliance declarations were not found in the provided public web data for this exact part number. The part appears in Samsung's automotive LPDDR5 listing, suggesting automotive qualification, but formal AEC-Q100 grade must be confirmed from the official datasheet or Samsung documentation. Obtain RoHS/REACH declarations from Samsung or your distributor.