K3KL8L80DM-JGCT - 32Gb LPDDR5X DRAM FBGA-315 | Samsung
Teilenummer: K3KL8L80DM-JGCT ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $100.87 | $100,87 |
| 10 | $95.83 | $958,30 |
| 100 | $90.78 | $9.078,00 |
| 500 | $85.74 | $42.870,00 |
| 1.000 | $80.7 | $80.700,00 |
K3KL8L80DM-JGCT Übersicht
LPDDR5X (Low Power Double Data Rate 5X) is an enhanced, low-power SDRAM interface standard used as main memory in battery-powered and thermally constrained systems. Within the memory hierarchy it belongs to the DRAM family -> synchronous DRAM -> LPDDR -> LPDDR5X, and it differs from DDR5 server DRAM by optimizing power per bit transfer rather than peak channel density.
Key features include the 32 Gbit monolithic die density, an x32 data organization suited to mobile application processors, multi-rail operation (VDD1/VDD2/VDDQ at approximately 1.8 V, 1.05 V, 0.9 V and 0.5 V class rails per the LPDDR5X generation), and operation over -25 C to +85 C. The FBGA-315 package provides low-inductance ball interconnects for multi-gigabit signaling.
Architecturally, LPDDR5X builds on LPDDR5 with enhanced speed-binned operation, dynamic voltage scaling, deep sleep modes, and link ECC features that reduce refresh power and preserve data integrity in always-on AI workloads.
Typical applications are flagship smartphone and tablet main memory, on-device AI accelerators, automotive infotainment and ADAS domains, and compact PC/edge modules.
Design consideration: LPDDR5X signal integrity requires careful length-matched routing, on-die termination tuning, and controller training; verify the exact speed grade suffix against the JEDEC LPDDR5X-compatible controller spec before layout.
This page adds distributor availability signals, same-family drop-in alternatives, and design guidance synthesized beyond the raw Samsung datasheet.
Drop-in-Alternativen für K3KL8L80DM-JGCT – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit K3KL8L80DM-JGCT (gleiche Bauform und Footprint) – abweichend in Density, Interface, Package, RoHS Status, Mounting Type.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
K3KL8L80DM-MGCU
✅ Drop-In✓ Auf Lager
Preis auf Anfrage
Datenblatt ansehen →K3KL8L80CM-MGCT
✅ Drop-In✓ Auf Lager
Preis auf Anfrage
Datenblatt ansehen →K3KL8L80EM-MGCU
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
K3KL9L90CM-MGCT
✅ Drop-In✓ Auf Lager
$36.91 / Stück
Datenblatt ansehen →K3KL7L70EM-MGCU
✅ Drop-In✓ Auf Lager
$12 / Stück
Datenblatt ansehen →K3KL8L80DM-JGCT Grenzwerte & elektrische Eigenschaften
| Manufacturer | Samsung Electronics |
| Product Type | LPDDR5X SDRAM |
| Density | 32 Gbit (4 GB) |
| Speicherorganisation | x32 |
| Gehäuse | FBGA-315 (315-ball BGA) |
| Datenrate | Up to 7500 Mbps (family up to 8.5 Gbps) |
| Schnittstelle | LPDDR5X (JEDEC LPDDR5-compatible, low-power SDRAM) |
| Supply Rails | 500 mV / 900 mV / 1.05 V / 1.8 V |
| Betriebstemperatur | -25C to +85C |
| Power Efficiency | ~20-25% improvement vs LPDDR5 (family figure) |
| Montageart | Surface Mount (BGA) |
| Application Domains | Mobile, PC, automotive, on-device AI |
| RoHS-Status | Compliant |
K3KL8L80DM-JGCT fbga-315 (315-ball bga) Pinbelegungsleitfaden
Pinbelegung für K3KL8L80DM-JGCT (fbga-315 (315-ball bga)-Gehäuse). Dieser digitale IC umfasst GPIO, Kommunikationsschnittstellen (UART, SPI, I2C) und Versorgungspins. Alternative Pin-Funktionen und Konfigurationsoptionen entnehmen Sie dem Herstellerdatenblatt. Unverzichtbar für Embedded-System-Design und PCB-Layout.
Keine detaillierten Pinbelegungsdaten verfügbar für K3KL8L80DM-JGCT.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
K3KL8L80DM-JGCT ist geeignet für 6 Anwendungs: Flagship Smartphone Main Memory, On-Device AI Inference, Automotive Infotainment and ADAS, Compact PC and Edge Computing Modules, Tablets and 2-in-1 Devices, Networking and Edge Server Accelerators.
Flagship Smartphone Main Memory
The K3KL8L80DM-JGCT's 32 Gbit x32 LPDDR5X configuration is a direct fit for flagship smartphone SoC main memory, where multi-gigabit bandwidth feeds CPU clusters, GPUs, and image signal processors. Its FBGA-315 package supports the compact stacking and PoP-style board strategies used in mobile layouts, while the LPDDR5X power envelope (0.5 V class VDDQ) directly extends battery life. Samsung's family data cites up to 8.5 Gbps and roughly 20-25% better efficiency than LPDDR5, which matters most during sustained camera burst capture and on-device model inference. Designers should co-train speed bins with the SoC controller and reserve thermal headroom near the PMIC for the 1.8 V and 1.05 V rails.
Empfohlen
On-Device AI Inference
On-device AI workloads are memory-bandwidth bound, and the K3KL8L80DM-JGCT addresses this with up to 7,500 Mbps data rates and an x32 interface that maximizes per-package bandwidth in a single die. Samsung explicitly positions LPDDR5X for on-device AI, where the ~25% power-efficiency gain over LPDDR5 reduces thermal throttling during sustained transformer inference. The 4 GB per-die density supports quantized multi-billion-parameter models with headroom for the OS. In NPU-centric designs, place the die close to the SoC with length-matched DQ routing under strict skew budgets, and enable deep-sleep modes between inference bursts to exploit the LPDDR5X low-power states for idle-power reduction.
Empfohlen
Automotive Infotainment and ADAS
Automotive cockpit and ADAS platforms use LPDDR5X for high-resolution displays, surround-view camera fusion, and navigation, and Samsung markets LPDDR5X for automotive devices. The documented -25 C to +85 C operating range on the same-die K3KL8L80CM variant covers most cabin and near-engine electronics environments. A 4 GB die per package enables stacked configurations for digital-cluster plus infotainment SoCs. For production, confirm the -JGCT ordering code carries the required automotive qualification level per Samsung's ordering table; infotainment is the typical entry application while safety domains may require Samsung's dedicated automotive LPDDR5X codes with full AEC-level validation.
Empfohlen
Compact PC and Edge Computing Modules
Thin-and-light laptops, mini PCs, and SFF edge modules increasingly adopt LPDDR5X soldered memory for bandwidth and power gains over DDR4/DDR5 SODIMM designs. The K3KL8L80DM-JGCT's FBGA-315 surface-mount footprint lets board designers place 4 GB per die directly under or beside the SoC, freeing the mechanical envelope otherwise consumed by sockets and slots. With 7,500 Mbps-class operation, integrated GPUs gain bandwidth that directly lifts graphics and AI performance. Designers must commit to memory-on-board (no field upgrade), so qualify at least two same-footprint Samsung variants and implement comprehensive boot-time training coverage across process, voltage, and temperature corners.
Empfohlen
Tablets and 2-in-1 Devices
Tablets balance peak performance against passive-cooling constraints, making the K3KL8L80DM-JGCT's efficiency profile valuable: 4 GB per die in x32 LPDDR5X at 0.5 V class VDDQ delivers desktop-class bandwidth without a fan. Multi-display multitasking, 120 Hz panels, and on-device photo/video processing all scale with memory bandwidth, which the LPDDR5X generation supplies via higher data rates rather than higher power. Its -25 C to +85 C range covers enclosed handheld environments. Layout should prioritize VDDQ plane integrity and dense decoupling near the ball field, and firmware should exploit per-bank refresh and self-refresh entry during idle periods to minimize standby drain.
Empfohlen
Networking and Edge Server Accelerators
Edge gateways, 5G baseband cards, and inference accelerators at the network edge use LPDDR5X where DDR5 power budgets are too high. The K3KL8L80DM-JGCT supplies 4 GB of low-latency working memory per die, and multiple dies can be banked to scale capacity while keeping per-watt bandwidth high - Samsung cites up to 8.5 Gbps family operation and ~20% efficiency gain over LPDDR5. In fanless outdoor enclosures, the reduced heat load directly improves reliability. Route memory as point-to-point to the SoC, apply the controller's LPDDR5X training algorithms across temperature, and monitor die temperature via the device's temperature sensor features for adaptive throttling policy.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für K3KL8L80DM-JGCT – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | K3KL8L80DM-MGCU | K3KL8L80CM-MGCT | K3KL8L80EM-MGCU | K3KL9L90CM-MGCT |
|---|---|---|---|---|---|
| Package | FBGA-315 | FBGA-315 - same | FBGA-315 - same | FBGA-315 - same | FBGA-315 family - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 32 Gbit (4 GB) | 32 Gbit (4 GB) | 32 Gbit (4 GB) | 32 Gbit | 36 Gbit |
| Interface | LPDDR5X | LPDDR5X | LPDDR5X | LPDDR5X | LPDDR5X |
Wichtigste Unterscheidungsmerkmale
- LPDDR5X power efficiency (vs. LPDDR5-generation K3KL-family parts)
- Same-footprint second-source options (vs. K3KL8L80DM-MGCU / K3KL8L80CM-MGCT)
- 32 Gbit monolithic density in x32 organization (vs. K3KL7L70EM-MGCU (lower density family member))
Designhinweise
At LPDDR5X data rates (7,500 Mbps class), DQ/CA routing requires length matching with skew budgets of only a few picoseconds, controlled-impedance traces (40-60 ohm), and unbroken reference planes under every signal group. Follow the SoC memory controller vendor's LPDDR5X routing guideline for fly-by clock and CA topology. Estimated: at these edge rates even a 5 mm stub can degrade eye margins, so avoid via stubs on DQ lines or back-drill where necessary.
The device uses multiple rails (500 mV / 900 mV / 1.05 V / 1.8 V classes per Samsung family data). Sequence VDD1/VDD2 before VDDQ per the LPDDR5X power-up procedure and use PMIC rails with fast transient response for VDDQ, since refresh and read bursts create high di/dt. Estimated: a 4 GB die at full bandwidth can draw several hundred milliamps on VDDQ with sub-microsecond transients, demanding low-ESL decoupling and nearby bulk capacitance. Verify rail sequencing order in the controller's power-up checklist.
Do not substitute speed-grade suffixes without verifying controller training coverage: LPDDR5X controllers qualify specific speed bins at boot, and a C/D/E binning difference within the K3KL8L80 family (e.g., K3KL8L80CM-MGCT vs -DM-JGCT) can exceed a validated operating point. Also confirm the ordering-code decode with Samsung's official ordering-information table rather than broker descriptions, as third-party listings frequently conflate suffix letters.
Compliance-Informationen
ROHS compliance stated in distributor listing (JLCPCB for same-die variant K3KL8L80CM-MGCT). REACH, halogen-free and conflict-minerals declarations not present in retrieved data - obtain from Samsung environmental documentation.
