LMG708B0QRXRQ1 - 80V 20A GaN Buck Converter | Texas Instruments
Teilenummer: LMG708B0QRXRQ1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
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| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
LMG708B0QRXRQ1 Übersicht
A synchronous buck converter (also called a step-down switching regulator) is a power management IC that uses switching elements and an inductor to efficiently convert a higher input voltage to a lower output voltage. Within the power supply hierarchy - semiconductor, power management IC, DC/DC converter, buck regulator - synchronous buck converters achieve the highest efficiency by replacing the freewheeling diode with a second actively controlled FET. Integrated GaN FETs push this efficiency further: gallium nitride transistors switch faster and exhibit near-zero reverse-recovery losses compared to silicon MOSFETs, dramatically reducing both switching losses and deadtime requirements.
Key features of the LMG708B0QRXRQ1 include the 20A output capability, the 80V maximum input for industrial and automotive 48V-class rails, low-RDS(on) integrated GaN power stages, and an operating envelope that supports outputs up to 55V. The Q1 suffix indicates Texas Instruments AEC-Q100 automotive qualification discipline, supporting deployment in vehicle power architectures such as 48V-to-12V point-of-load conversion.
Technical strengths center on power density: by combining controller, gate drivers, and GaN FETs in one package, the device eliminates external power stage layout parasitics, minimizes switching-node ringing, and simplifies EMI management. Near-zero deadtime operation avoids the body-diode conduction period that dominates silicon designs, cutting losses at high frequency and high current simultaneously.
Typical applications include 48V automotive and industrial power distribution, high-current point-of-load conversion, telecom and server power stages, and robotics/automation drive supplies where high efficiency and compact size are mandatory.
Design consideration: with 20A of output current, PCB thermal design and inductor selection dominate system performance - follow the TI datasheet layout guidance closely, and as of 2026-08-29 confirm current pricing and stock via authorized distributors.
Drop-in-Alternativen für LMG708B0QRXRQ1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit LMG708B0QRXRQ1 (gleiche Bauform und Footprint) – abweichend in Output Voltage Range, Topology.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
Für dieses Produkt sind keine Drop-in-Alternativen verfügbar.
Alternativen anfordernLMG708B0QRXRQ1 Grenzwerte & elektrische Eigenschaften
| Topologie | Synchronous Buck DC/DC Converter |
| Technology | Integrated GaN FETs, near-zero deadtime switching |
| Maximaler Ausgangsstrom | 20 A |
| Eingangsspannungsbereich | 5 V to 80 V |
| Ausgangsspannungsbereich | 1 V to 55 V (adjustable) or fixed 5 V / 12 V |
| Maximum Junction Temperature | 125 C |
| Montageart | Surface Mount |
| Automotive Qualification | AEC-Q100 (Q1 grade) |
| Anzahl der Ausgänge | 1 |
LMG708B0QRXRQ1 standard Pinbelegungsleitfaden
Pinbelegung für LMG708B0QRXRQ1 (standard-Gehäuse). Dieses Leistungsbauteil verfügt über Gate-, Drain- und Source-Anschlüsse. Bei nicht gepolten Gehäusen entnehmen Sie die genaue Ausrichtung von Pin 1 und Footprint-Details dem Herstellerdatenblatt. Typische Anwendungen sind Netzteilentwurf, Motoransteuerung und Lastschaltung.
Keine detaillierten Pinbelegungsdaten verfügbar für LMG708B0QRXRQ1.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
LMG708B0QRXRQ1 ist geeignet für 6 Anwendungs: 48V Automotive Power Distribution, Industrial 48V Robotics and Automation, Telecom and Server Power Stages, High-Current Point-of-Load Conversion, Solar and Energy Storage Input Conversion, Wireless Infrastructure and Test Equipment.
48V Automotive Power Distribution
In modern 48V vehicle architectures, the LMG708B0QRXRQ1 converts the 48V bus down to 12V or 5V point-of-load rails with up to 20A of output current. Its 80V maximum input provides headroom for load-dump transients, and the Q1 AEC-Q100 qualification supports automotive deployment. The integrated GaN FETs with near-zero deadtime switching keep efficiency high at high step-down ratios, reducing heatsinking and enabling compact zonal power modules.
Empfohlen
Industrial 48V Robotics and Automation
Robotics and factory automation systems increasingly use 48V motor and logic buses. The LMG708B0QRXRQ1 steps 48V down to 12V/5V rails at up to 20A with very high efficiency, thanks to its integrated low-RDS(on) GaN FETs and 125C junction rating. Its high power density allows smaller control boards, while the wide 5V-80V input tolerates industrial supply variation and inductive transients common on factory floors.
Empfohlen
Telecom and Server Power Stages
In telecom rectifiers and server baseboards, intermediate bus voltages in the 36V-60V range must be converted efficiently to point-of-load rails. The LMG708B0QRXRQ1 accepts 5V-80V inputs and delivers up to 20A, with fixed 5V and 12V output options simplifying standard rail designs. Near-zero deadtime GaN switching reduces losses at the high switching frequencies these dense power systems require, cutting total solution size.
Empfohlen
High-Current Point-of-Load Conversion
Where a single high-current rail is needed from a wide-range input, the LMG708B0QRXRQ1 provides a complete synchronous buck solution in one package - controller, gate drivers, and GaN power FETs integrated. Adjustable output from 1V to 55V covers logic, analog, and battery-charging rails up to 20A. Integration removes external power-stage layout parasitics, improving switching-node integrity and easing EMI compliance compared with controller-plus-discrete-FET designs.
Empfohlen
Solar and Energy Storage Input Conversion
Solar string inputs and battery stacks present wide-voltage sources where the LMG708B0QRXRQ1 5V-80V input range and 1V-55V adjustable output are valuable. Converting panel or stack voltage to system rails at up to 20A with GaN efficiency preserves harvested energy, and the 125C junction rating suits enclosed outdoor electronics. Verify input transient suppression for lightning and switching surge conditions per TI reference design guidance.
Empfohlen
Wireless Infrastructure and Test Equipment
RF amplifiers and instruments need clean, efficient supplies at moderate voltages and high current. The LMG708B0QRXRQ1 fixed 12V or adjustable output options feed PA rails directly from 24V-48V distribution buses at up to 20A. GaN near-zero deadtime operation minimizes switching ripple and EMI, easing filtering for noise-sensitive analog loads, while the compact integrated solution fits within dense instrument chassis.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für LMG708B0QRXRQ1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | LMG708B0QRXR | LM70880QRRXRQ1 | TPS54360QDDARQ1 |
|---|---|---|---|---|
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Input Voltage Range | 5 V to 80 V | 5 V to 80 V | 3.5 V to 80 V | 4.5 V to 60 V |
| Output Current | 20 A | 20 A | 8 A | 3.5 A |
| Output Voltage Range | 1 V to 55 V or fixed 5 V / 12 V | 1 V to 55 V or fixed 5 V / 12 V | 0.8 V adjustable or fixed 3.3 V / 5 V / 12 V | 0.8 V adjustable |
| Power FET Technology | Integrated GaN FETs | Integrated GaN FETs | Integrated silicon FETs | Integrated silicon FETs |
| Automotive Qualification | AEC-Q100 (Q1) | No (standard grade) | AEC-Q100 (Q1) | AEC-Q100 (Q1) |
Wichtigste Unterscheidungsmerkmale
- Integrated GaN FETs with near-zero deadtime switching (vs. LM70880QRRXRQ1)
- 80V input with 55V output capability (vs. TPS54360QDDARQ1)
- Trade-off: fewer lower-current drop-in options (vs. TPS54360QDDARQ1)
Designhinweise
At 20A output the LMG708B0QRXRQ1 dissipates conduction and switching losses in its integrated GaN FETs, rated to a maximum junction temperature of 125C. Use heavy PCB copper pours on the exposed thermal connection and the power stage nodes, select a low-DCR inductor, and simulate junction temperature at worst-case VIN, load, and ambient. High step-down ratios (80V to low rails) increase switching-related loss; consider lowering switching frequency or improving airflow at full load.
Because the GaN power FETs are integrated, switching-node parasitics are largely set by PCB layout. Keep the input ceramic capacitor loop as short and wide as possible, place the inductor directly at the switch node, and pour solid ground planes under the IC. Follow the LMG708B0 datasheet layout section and TI reference design (e.g., the LMG708B0 evaluation module guidance) exactly; near-zero deadtime GaN switching leaves little margin for sloppy hot-loop design.
Never exceed the 80V maximum input voltage - automotive 48V systems can experience transients approaching or exceeding this limit, so add appropriate TVS/transient suppression on the input. Do not attempt to deliver full 20A without verifying thermal performance in the final enclosure. Set the output no higher than 55V, and use the feedback divider per the datasheet formula when operating in adjustable mode.
Compliance-Informationen
Q1 suffix indicates AEC-Q100 automotive qualification per TI naming convention. RoHS/REACH status should be confirmed on the TI product page quality section.
