MRF5S9101MR1 - 100W 869-960MHz RF Power LDMOS | NXP
Teilenummer: MRF5S9101MR1 ✗ Abgekündigt| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $78.5 | $78,50 |
| 10 | $72.1 | $721,00 |
| 100 | $64.85 | $6.485,00 |
| 500 | $57.2 | $28.600,00 |
| 1.000 | $49.95 | $49.950,00 |
MRF5S9101MR1 Übersicht
A Radio Frequency power transistor is a specialized discrete semiconductor designed to amplify high-frequency signals with substantial output power while maintaining acceptable efficiency and linearity. These devices sit at the final stage of a transmitter chain, immediately before the antenna or filter network, and belong to the broader category of power amplifiers. Within that taxonomy, LDMOS is the dominant silicon technology for sub-3 GHz base-station transmitters because it offers higher gain, better ruggedness, and lower cost-per-watt than competing GaAs or SiGe solutions.
Key specifications of the MRF5S9101MR1 include 17.5 dB power gain measured at 960 MHz / 26 V / 700 mA, a 68 V maximum drain-source voltage rating, 100 W POUT, and 700 mA quiescent test current. The device is rated for 26 V operation and is characterized for both pulsed and CW waveforms in single-carrier and multi-carrier amplifier (MCPA) topologies. The TO-270 WB-4 flange package provides a low thermal-resistance path to the heatsink, enabling continuous operation at full rated output with a conventional extruded aluminum fin.
The MRF5S9101MR1 uses NXP's fifth-generation high-voltage LDMOS process, which integrates an anti-static gate protection network and a thermally matched lead frame. This architecture offers improved thermal conductivity versus earlier MRF5-series packages and supports the high peak-to-average ratios of EDGE and multi-carrier waveforms. The device is also internally matched for input impedance at 900 MHz, simplifying board-level integration with standard microstrip or stripline balun networks.
Typical applications include GSM 900, GSM EDGE 900, and N-CDMA base-station power amplifiers operating in the 869-960 MHz cellular band, as well as multi-carrier amplifier (MCPA) modules, repeaters, and industrial RF heating sub-assemblies. Designers pair the transistor with an NXP or third-driver LDMOS stage (for example MRF5S2100 or similar drivers) to assemble the full RF chain.
When designing with the MRF5S9101MR1, ensure the heatsink compound interface has a thermal resistance below 0.3 C/W and the supply rail includes sufficient bulk capacitance to support peak pulsed current without voltage collapse. The lead-free MRF5S9101NR1/NBR1 variant is form, fit, and function equivalent and replaces the MR1 part where Pb-free assembly is required.
This page consolidates distributor pricing, parameter comparison, drop-in alternatives, and practical RF design guidance not found in the manufacturer datasheet alone.
Drop-in-Alternativen für MRF5S9101MR1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MRF5S9101MR1 (gleiche Bauform und Footprint) – abweichend in Mounting Type, Package / Case, Transistor Type, Application, Power Gain.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MRF5S9101NR1
✅ Drop-In✓ Auf Lager
$61.4 / Stück
Datenblatt ansehen →MRF5S9101NBR1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF5S9101MBR1
✅ Drop-In✓ Auf Lager
$45 / Stück
Datenblatt ansehen →MRF5S9101MR1 Grenzwerte & elektrische Eigenschaften
| Transistortyp | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) |
| Technology | RF Power Field Effect Transistor |
| Frequency Range | 869 MHz to 960 MHz |
| Test Frequency | 960 MHz |
| Test Voltage | 26 V |
| Test Current (Quiescent) | 700 mA |
| Power Output (POUT) | 100 W (CW) |
| Power Gain | 17.5 dB at 960 MHz |
| Drain-Source Voltage (Rated) | 68 V |
| Gehäuse / Bauform | TO-270 WB-4 (Case 1486-03, Style 1) |
| Supplier Device Package | TO-270 WB-4 |
| Montageart | Chassis / Flange Mount (through-hole flange) |
| Lead Free Status | Replaced by MRF5S9101NR1/NBR1 (form/fit/function equivalent) |
| RoHS-Status | Compliant (lead-free N-suffix variants) |
| Application | GSM / GSM EDGE / N-CDMA base station final-stage PA |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) |
MRF5S9101MR1 to-270 wb-4 Pinbelegungsleitfaden
Pinbelegung für MRF5S9101MR1 (to-270 wb-4-Gehäuse). Dieses Leistungsbauteil verfügt über Gate-, Drain- und Source-Anschlüsse. Bei nicht gepolten Gehäusen entnehmen Sie die genaue Ausrichtung von Pin 1 und Footprint-Details dem Herstellerdatenblatt. Typische Anwendungen sind Netzteilentwurf, Motoransteuerung und Lastschaltung.
Keine detaillierten Pinbelegungsdaten verfügbar für MRF5S9101MR1.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Estimated DC Sicherer Arbeitsbereich (MRF5S9101MR1)
Typische Anwendungen
MRF5S9101MR1 ist geeignet für 6 Anwendungs: GSM 900 Base Station Final Stage, GSM EDGE Multi-Carrier Amplifier (MCPA), N-CDMA Base Station Power Amplifier, Cellular Repeater and Booster PA, Industrial RF Heating Generator, Public-Safety / Land-Mobile Radio Repeater.
GSM 900 Base Station Final Stage
The MRF5S9101MR1's 100 W CW output capability at 26 V and 17.5 dB gain make it a natural choice for the final power amplifier stage of a 900 MHz GSM base-station transmitter. Its TO-270 WB-4 flange package mounts directly to a chassis-spreader heatsink for sustained CW operation. Placed downstream of a balanced driver pair and inter-stage matching network, it produces the high-purity, high-linearity RF envelope required at the antenna feed. Designers benefit from the device's internal matching around 900 MHz, which simplifies the output combiners and reduces PCB iteration. The 68 V drain rating also provides 2.6:1 derating versus the 26 V operating rail, an engineering factor that improves long-term reliability against transient load-pulling from antenna mismatch events.
Empfohlen
GSM EDGE Multi-Carrier Amplifier (MCPA)
Multi-carrier amplifier modules feeding two or more GSM EDGE carriers through a common final stage benefit from the MRF5S9101MR1's high gain and good linearity at 900 MHz. With 26 V bias and 700 mA quiescent current, the LDMOS part can swing 100 W of composite output power while keeping intermodulation spurs low enough for the EDGE modulation mask. Internally matched input impedance at 960 MHz reduces the need for lossy inter-stage networks, and the wide frequency coverage from 869 to 960 MHz accommodates all cellular bands worldwide. Compared with older silicon bipolar finals, the LDMOS part delivers cleaner error-vector-magnitude (EVM) at the high peak-to-average ratios of EDGE bursts, making it easier to meet spectral-emissions masks with moderate output filtering.
Empfohlen
N-CDMA Base Station Power Amplifier
Originally specified for N-CDMA final stages by NXP/Freescale, the MRF5S9101MR1 remains a popular drop-in or new-build part for legacy N-CDMA base station transmitters operating in the 869-960 MHz band. Its 100 W continuous output rating, low memory-effect characteristics, and TO-270 flange-mount packaging align with the high-linearity requirements of direct-sequence spread signals. Designers integrate the part into a Doherty configuration for efficiency enhancement, where its 17.5 dB gain provides sufficient loop margin for the peaking amplifier. The transistor's high ruggedness against 10:1 VSWR allows it to ride out antenna disconnect events during transmitter commissioning, an important operational consideration in dense cellular deployments.
Empfohlen
Cellular Repeater and Booster PA
Off-air repeaters and indoor cellular boosters operating in the 900 MHz band often need a 50-100 W final stage to extend coverage, and the MRF5S9101MR1 fits exactly that requirement. Its 17.5 dB gain lets the FPGA-based DSP correction loop converge with low residual error after digital predistortion, while the 26 V supply rail simplifies AGC implementation. Used at the head-end of an optical-fiber-distributed DAS system, this NXP LDMOS part delivers the linear power required to feed multiple remote antenna units. The internally-matched input network reduces the booster's BOM count, and the TO-270 package mates with standard outdoor repeater heatsink assemblies.
Empfohlen
Industrial RF Heating Generator
Beyond telecom, the MRF5S9101MR1 is well suited to industrial-class RF generators operating at 869-960 MHz for dielectric heating, food processing, and plasma excitation applications. At 100 W continuous output with proper cooling, it sustains the load long enough for commercial process throughput. Engineers appreciate its 68 V drain rating, which provides extra margin against load mismatch in unfamiliar material loads, and its enhancement-mode gate allows simple +5 V class-C biasing. Compared to vacuum tubes at this power level, the LDMOS part delivers comparable RF output with significantly lower operating cost, easier bias control, and immediate turn-on/turn-off.
Empfohlen
Public-Safety / Land-Mobile Radio Repeater
Public-safety repeaters operating near 900 MHz can leverage the MRF5S9101MR1 for the final PA stage, taking advantage of its 100 W output and ruggedness against antenna mismatch. Its broadband gain response across 869-960 MHz covers trunked radio, P25, TETRA-style, and adjacent public-safety bands without retuning. The TO-270 flange package installs directly into the repeater's chassis as a conduction-cooled stage, supporting 24/7 duty cycles demanded by emergency-service communications. Designers add an isolator at the output to protect the LDMOS part from antenna faults during field deployment and vehicular-mobile install environments.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MRF5S9101MR1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MRF5S9101NR1 | MRF5S9101NBR1 | MRF5S9101MBR1 |
|---|---|---|---|---|
| Package | TO-270 WB-4 (Case 1486-03) | TO-270 WB-4 (Case 1486-03) - same | TO-270 WB-4 (Case 1486-03) - same | TO-270 WB-4 (Case 1486-03) - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors (formerly Freescale) |
| Frequency Range | 869-960 MHz | 869-960 MHz | 869-960 MHz | 869-960 MHz |
| Output Power (POUT) | 100 W CW | 100 W CW | 100 W CW | 100 W CW |
| Power Gain | 17.5 dB at 960 MHz | 17.5 dB at 960 MHz | 17.5 dB at 960 MHz | 17.5 dB at 960 MHz |
| Test Voltage | 26 V | 26 V | 26 V | 26 V |
| Drain-Source Voltage (Rated) | 68 V | 68 V | 68 V | 68 V |
| Lead Finish | Tin-Lead (SnPb) - legacy | Lead-free (Pb-free) RoHS | Lead-free (Pb-free) RoHS | Tin-Lead (SnPb) - leaded equivalent |
| Packaging Format | Tape & Reel (MR1 suffix) | Tape & Reel (NR1 suffix) | Bulk / Tube (NBR1 suffix) | Tape & Reel (MBR1 suffix) |
| RoHS Compliance | Not RoHS (SnPb finish) | RoHS compliant | RoHS compliant | Not RoHS (SnPb finish) |
Wichtigste Unterscheidungsmerkmale
- Mature form/fit/function replacement path with explicit NXP endorsement (vs. MRF5S9101NR1)
- Bulk packaging option for low-volume assembly (vs. MRF5S9101NBR1)
- Highest cross-brand parts availability on Rochester Electronics (vs. MRF5S9101MBR1)
Designhinweise
Estimated: at 100 W CW output and ~55% efficiency, the MRF5S9101MR1 dissipates approximately 80 W of heat. Use a high-grade silicone thermal interface material (TIM) and an extruded aluminum heatsink with thermal resistance below 0.2 C/W, plus forced-air cooling if the chassis temperature rises above 50 C. Mount the flange with the recommended torque to avoid warping the case-to-flange joint, which would increase RθJC.
The TO-270 WB-4 flange is meant for chassis-mount through-hole fastening. The RF input and output leads are formed and soldered into a microstrip or stripline on the PCB adjacent to the heatsink. Keep the gate-bias trace as short and guard-traced as possible; long bias traces can introduce low-frequency memory effects that degrade digital predistortion performance in MCPA designs.
When replacing MRF5S9101MR1 with the NR1 or NBR1 lead-free variant, verify the assembly oven profile accommodates lead-free reflow (peak 245-260 C). The N-suffix parts use NiPdAu or matte-tin finish that requires higher peak temperature than the SnPb-finished MR1 part. Per NXP, no electrical or mechanical re-tuning is required between the variants.
Place a 47-100 uF bulk aluminum-polymer or aluminum-electrolytic capacitor directly at the 26 V drain feed to handle the 700 mA pulsed current. According to the datasheet typical application, a quarter-wave microstrip stub on the gate and drain provides stability margin and prevents parametric oscillation above 1 GHz. Avoid routing sensitive control lines across the output matching network to prevent unintended feedback.
Compliance-Informationen
MRF5S9101MR1 (MR-suffix) is SnPb-leaded and not RoHS compliant. The lead-free N-suffix variants (MRF5S9101NR1 and MRF5S9101NBR1) are RoHS compliant and replace the MR1 part without re-engineering. Halogen-free status was not stated in the verified data and is recorded as 'unknown'. REACH compliance inferred from NXP corporate compliance statements.
