MRF6VP3450HR6 - 860 MHz 450W RF Power MOSFET | NXP Semiconductors
Teilenummer: MRF6VP3450HR6 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $285 | $285,00 |
| 10 | $268 | $2.680,00 |
| 100 | $245 | $24.500,00 |
| 500 | $225 | $112.500,00 |
| 1.000 | $210 | $210.000,00 |
MRF6VP3450HR6 Übersicht
A lateral-diffused MOS (LDMOS) power transistor is a specialized MOSFET optimized for RF power amplification rather than low-frequency switching. LDMOS devices achieve high breakdown voltage, high gain, and excellent thermal performance by laterally diffusing the drain region under the gate oxide. Within the broader hierarchy of power transistors, LDMOS sits between traditional silicon MOSFETs and GaN HEMTs in capability, dominating the UHF/VHF broadcast and cellular infrastructure market where 50 V operation is standard.
Key specifications include 50 V drain-source rating, 22.5 dB typical power gain at 860 MHz, 450 W CW output power, 1.4 A typical quiescent bias current, and broadband performance from 470 to 860 MHz. The lateral N-channel enhancement-mode structure enables simple class-AB biasing with a single positive gate supply. The NI-1230 ceramic package provides a low thermal resistance path and is bolt-down compatible with industry-standard broadcast RF pallets.
Typical applications include DVB-T/DVB-T2 UHF TV transmitter final stages, ATSC digital television transmitters, analog VHF/UHF broadcast amplifiers, industrial RF heating sources at 860 MHz, and broadband RF generator instrumentation. The MRF6VP3450HR6 is also used as a driver for higher-power UHF broadcast pallets in stacked amplifier configurations.
When designing with this part, ensure adequate heat-sinking through the bolted flange and maintain proper output load network matching for the target band. The MRF6VP3450HR6 requires a regulated 50 V drain supply and a low-noise gate bias supply; designers should sequence gate voltage before drain voltage to prevent thermal runaway during startup.
This page synthesizes NXP datasheet specifications, parametric alternatives, and application design considerations for the MRF6VP3450HR6, providing engineering context beyond the manufacturer datasheet.
Drop-in-Alternativen für MRF6VP3450HR6 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MRF6VP3450HR6 (gleiche Bauform und Footprint) – abweichend in Configuration, Manufacturer, Mounting Type, Output Power (Pout), Package / Case.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
Für dieses Produkt sind keine Drop-in-Alternativen verfügbar.
Alternativen anfordernMRF6VP3450HR6 Grenzwerte & elektrische Eigenschaften
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Transistortyp | LDMOS (N-Channel Enhancement-Mode Lateral) |
| Drain-Source Voltage (VDS) | 50 V |
| Rated Voltage | 110 V |
| Operating Frequency | 470 MHz to 860 MHz |
| Test Frequency | 860 MHz |
| Output Power (Pout) | 450 W (CW) |
| Test Power Output | 90 W |
| Power Gain (Gps) | 22.5 dB at 860 MHz |
| Drain Current (Test Id) | 1.4 A |
| Gehäuse / Bauform | NI-1230 (ceramic, bolt-down) |
| Configuration | Single, common-source amplifier |
| Montageart | Chassis-mount, bolted flange |
| Technology | Lateral-Diffused MOS (LDMOS) |
| Application | Broadcast TV transmitter final stage / broadband RF amplifier |
MRF6VP3450HR6 Pin-Konfiguration
| Pin 1 | DRAIN — Drain (RF output / 50 V DC supply) |
| Pin 2 | GATE — Gate (DC bias input, ~2.5-3.5 V class-AB) |
| Pin 3 | SOURCE — Source (RF ground / DC return, bolted to chassis) |
| Pin 4 | FLANGE — Mounting flange / thermal pad (bolted to heat sink) |
Sicherer Arbeitsbereich (DC)
Typische Anwendungen
MRF6VP3450HR6 ist geeignet für 6 Anwendungs: DVB-T / DVB-T2 UHF TV Transmitter Final Stage, ATSC Digital Television Transmitter Amplifier, Analog VHF/UHF Broadcast Amplifier, Industrial RF Heating / Plasma Generation, Broadband RF Generator / Test Instrumentation, UHF Driver Stage for kW-Class Broadcast Pallets.
DVB-T / DVB-T2 UHF TV Transmitter Final Stage
The MRF6VP3450HR6 is a direct-fit final-stage amplifier for DVB-T and DVB-T2 UHF digital television transmitters operating in the 470-860 MHz band. Its 50 V drain supply matches the standard broadcast pallet architecture used across the European UHF TV band, while its 22.5 dB power gain reduces driver-stage complexity - a single pre-driver can supply the full 450 W CW output needed for medium-power transmitters. The lateral LDMOS structure is purpose-built for OFDM waveforms, tolerating the high peak-to-average power ratio (PAPR ~8-10 dB) of DVB-T2 signals without gain compression or memory effects that would degrade MER (modulation error ratio). Placed between the 50 V main rail and the bandpass-filter output network with a 2.5-3.5 V gate bias, this part provides the linearity and broadband flatness required for 64-QAM and 256-QAM constellation performance in commercial broadcast plants.
Empfohlen
ATSC Digital Television Transmitter Amplifier
The MRF6VP3450HR6 is well-suited for ATSC 8-VSB digital television transmitter final amplifiers covering UHF channels 14-51 (470-698 MHz). Its 22.5 dB gain at 860 MHz and 450 W CW output capability let ATSC transmitter designers build medium-power (~200 W after combining loss) digital TV transmitters using a single-ended PA brick. The 50 V LDMOS architecture handles the ATSC signal's 6.9 dB PAPR cleanly when operated in class-AB with digital pre-correction, preserving the strict 8-VSB constellation error vector magnitude (EVM) requirements. The broadband 470-860 MHz coverage allows the same amplifier design to be retuned across multiple ATSC channel assignments by swapping only the output matching network.
Empfohlen
Analog VHF/UHF Broadcast Amplifier
The MRF6VP3450HR6 serves as a final or driver stage in 50 V analog television transmitters for legacy NTSC/PAL/SECAM systems still operated in some regions. The high 22.5 dB gain and 450 W output reduce the number of gain stages required, simplifying analog chain design and reducing overall transmitter cost. Its broadband frequency response allows a single amplifier design to cover multiple analog TV channel assignments across the UHF band. Per the NXP datasheet, the device is qualified for '50 volt analog or digital television transmitter equipment', confirming its heritage in analog broadcast service.
Empfohlen
Industrial RF Heating / Plasma Generation
The MRF6VP3450HR6 can be deployed as a CW power source in 860 MHz industrial RF heating and plasma-generation systems, where its 450 W continuous output and 50 V operation suit medium-power dielectric and plasma applications. The broadband 470-860 MHz response allows the same device to be tuned across ISM-adjacent frequencies used in plasma generation, semiconductor etch, and materials processing. Lateral LDMOS robustness against load mismatch (with appropriate circulator protection) makes it suitable for industrial environments where VSWR excursions are common. The NI-1230 bolt-down package simplifies thermal integration into process-tool chassis.
Empfohlen
Broadband RF Generator / Test Instrumentation
The MRF6VP3450HR6 works as a broadband power amplifier output stage in laboratory RF signal generators and test instrumentation covering 470-860 MHz. Its 22.5 dB gain and 450 W capability support general-purpose CW and pulsed test signal generation for EMC, antenna-pattern, and RF-component characterization. The lateral LDMOS device provides stable, repeatable performance across the band, simplifying calibration in production test systems. Engineers can sweep the full UHF band with one amplifier and external matching networks.
Empfohlen
UHF Driver Stage for kW-Class Broadcast Pallets
The MRF6VP3450HR6 functions as a driver in stacked amplifier configurations feeding higher-power final PAs in kW-class UHF broadcast transmitters. Its 22.5 dB gain delivers ample drive to push a 1 kW-class LDMOS device to full output across the 470-860 MHz band, with the 50 V supply matching standard broadcast combiner architectures. This driver role leverages the part's broadband response so the same pallet design can support multiple regional channel assignments. Designers often pair the MRF6VP3450HR6 with circulator protection and a 3 dB hybrid combiner for reliable kW-system operation.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MRF6VP3450HR6 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MRF6VP3450HR5 | MRF6VP3450HSR6 | MRF6VP3450HSR5 | MRF6VP41KHR6 |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors - same | NXP Semiconductors - same | NXP Semiconductors - same | NXP Semiconductors - same |
| Package | NI-1230 | NI-1230 - same | NI-1230S - same family, different bolt pattern | NI-1230S - same family, different bolt pattern | NI-1230 family - verify flange |
| Drain-Source Voltage | 50 V | 50 V | 50 V | 50 V | 50 V |
| Output Power (CW) | 450 W | 450 W | 450 W | 450 W | ~1000 W (higher power class) |
| Power Gain at 860 MHz | 22.5 dB | 22.5 dB | 22.5 dB | 22.5 dB | ~20 dB (typical for higher Pout class) |
| Operating Frequency | 470-860 MHz | 470-860 MHz | 470-860 MHz | 470-860 MHz | 470-860 MHz (family) |
| Gain Bin | R6 (tight bin) | R5 (wider bin) | R6 (tight bin) | R5 (wider bin) | R6 |
| Technology | LDMOS (N-Channel Lateral) | LDMOS - same | LDMOS - same | LDMOS - same | LDMOS - same |
Wichtigste Unterscheidungsmerkmale
- Industry-standard NI-1230 ceramic bolt-down package (vs. MRF6VP3450HSR6)
- Tight R6 gain bin for matched-pair amplifier designs (vs. MRF6VP3450HR5)
- Lower-cost general-purpose broadcast device (vs. MRF6VP41KHR6)
Designhinweise
The MRF6VP3450HR6 dissipates significant power in CW operation; at 450 W Pout with ~55% drain efficiency, the part dissipates roughly 370 W as heat. Per the NXP datasheet, the NI-1230 ceramic package must be bolted to a heat sink with adequate thermal capacity - a 0.04 C/W or better thermal resistance is typical for broadcast pallets. Use thermal interface material rated for the bolt-down pressure and ensure the flange surface is flat to within 0.001 inch to avoid hot spots. Estimated: at full CW operation, junction temperature should remain below 200 C with proper heat-sink design (max Tj is 225 C per NXP family datasheets).
RF layout for the MRF6VP3450HR6 requires a 50 ohm microstrip or stripline output network tuned for the target band (470-860 MHz), with the gate feed network providing a low-Q broadband match. Per NXP broadcast PA reference designs, keep gate and drain transmission lines short and use a low-inductance ground connection through the bolted flange. Add a drain-side bias choke and gate-side bias choke, each with a quarter-wave resonance well outside the operating band. Decoupling capacitors on both gate and drain bias lines should combine 10uF electrolytic with 100nF and 10nF ceramics for broadband decoupling.
Power supply sequencing is critical for the MRF6VP3450HR6: gate bias must be applied BEFORE the 50 V drain supply to prevent the device from operating without bias, which can cause thermal runaway and device destruction. Per NXP application notes, use a sequenced bias controller or discrete gate-then-drain power-up circuit. The 50 V drain supply should be current-limited to ~120% of expected operating current for fault protection. Include a gate clamping circuit to prevent Vgs from exceeding the +/-20 V maximum rating during turn-off transients.
Do not operate the MRF6VP3450HR6 into an open or highly-mismatched load - reflected power can cause instantaneous device failure. Per NXP recommendations, always include a circulator or dual-directional coupler with reflected-power shutdown in front of the antenna feed. Avoid running the device at zero quiescent current (class-C operation without bias) which can cause thermal cycling damage. Do not exceed 50 V drain supply even momentarily during turn-on/off transients; use a clamped supply rail.
Compliance-Informationen
Compliance data not explicitly stated in the verified web data; NXP/Freescale broadcast RF power transistors in ceramic NI packages historically use lead-bearing die attach and may be exempt from RoHS under EU Directive 2011/65/EU Annex III/IV for high-power RF devices. AEC-Q100 not applicable (broadcast RF power transistor, not automotive).
