MRF6VP3450HSR5 - 450W RF Power LDMOS, 470-860 MHz | NXP
MPN: MRF6VP3450HSR5 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $145 | $145.00 |
| 10 | $132.5 | $1,325.00 |
| 100 | $121 | $12,100.00 |
| 500 | $112 | $56,000.00 |
| 1,000 | $105 | $105,000.00 |
MRF6VP3450HSR5 Overview
An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) FET is a specialized power transistor designed for high-frequency, high-power amplification. Unlike small-signal MOSFETs used in logic or low-power analog, RF power LDMOS devices use a lateral structure on a silicon die to combine high breakdown voltage, high gain, and good thermal performance in a single robust package. They belong to the broader hierarchy: RF power transistor -> power semiconductor -> discrete semiconductor, and dominate UHF/VHF broadcast, mobile-radio, and industrial-scientific-medical (ISM) power amplifier stages because of their excellent gain linearity and ruggedness under VSWR mismatch.
The MRF6VP3450HSR5 provides 22.5 dB typical gain at 860 MHz, with broadband performance suitable for both analog and digital television transmitter PA stages. The device is optimized for common-source class-AB operation and is rated for continuous-wave (CW) as well as pulsed signal formats. Internally matched partially for ease of use, the transistor integrates ESD protection and is designed for long-term reliability at elevated flange temperatures typical of broadcast service.
Typical applications include UHF digital TV transmitter final stages (DVB-T, ATSC, ISDB-T), analog TV transmitter PAs in the 470-860 MHz band, industrial RF heating and plasma drivers, and broadband general-purpose amplifiers for scientific instrumentation. The wide bandwidth also makes it suitable for multi-channel combiner systems used in shared transmitter facilities.
When designing with the MRF6VP3450HSR5, allocate a substantial copper or spreader heat sink and ensure the bolt-down flange is mounted with proper torque and thermal compound. The drain bias should be applied through a sequenced supply to prevent in-rush currents, and the input/output matching networks must be tuned for the specific frequency sub-band within 470-860 MHz to achieve rated gain and efficiency. A circulator or isolator is recommended at the output to protect the device from load VSWR transients.
This page consolidates distributor inventory, datasheet references, and design guidance for engineers evaluating or sourcing the MRF6VP3450HSR5 for UHF power amplifier designs - information not present on a single distributor or manufacturer page.
Drop-in alternatives for MRF6VP3450HSR5 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with MRF6VP3450HSR5 (same form factor and footprint) — differing in Configuration, Manufacturer, Mounting Type, Output Power (Pout), Package / Case.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
MRF6VP3450HSR6
✅ Drop-In📋 Reference alternative (not in catalog)
MRF6VP3450HR5
✅ Drop-In📋 Reference alternative (not in catalog)
MRF6VP3450HR6
✅ Drop-In✓ In Stock
$210 / Unit
View Datasheet →MRF6VP3450HSR5
✅ Drop-In✓ In Stock
$105 / Unit
View Datasheet →MRF6VP3450HSR5
✅ Drop-In✓ In Stock
$105 / Unit
View Datasheet →MRF6VP3450HSR5 Maximum Ratings & Electrical Characteristics
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) |
| Transistor Type | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Technology | LDMOS (Laterally Diffused MOS) |
| Frequency Range | 470 MHz to 860 MHz |
| Test Frequency | 860 MHz |
| Drain-Source Voltage (Vds) Rated | 110 V minimum |
| Drain-Source Voltage (Vds) Test | 50 V |
| Continuous Drain Current (Id) | 1.4 A |
| Power Gain (Gps) | 22.5 dB typical |
| Output Power (Pout) | 450 W (CW, broadband rating) |
| Pulsed Output Power | 90 W (separate pulsed rating) |
| Package / Case | NI-1230-4S (bolt-down ceramic chassis-mount) |
| Supplier Device Package | NI-1230-4S |
| Mounting Type | Chassis Mount |
| Configuration | Single, common-source |
| Operating Mode | Class AB (typical for UHF broadcast PAs) |
| Qualification | Not Qualified (per partstack listing) |
| Peak Reflow Time | 40 s maximum |
MRF6VP3450HSR5 ni-1230-4s Pin Configuration Guide
Pin configuration for MRF6VP3450HSR5 (ni-1230-4s package). This power device features gate, drain, and source terminals. For non-polarized packages, refer to the manufacturer datasheet for exact pin 1 orientation and footprint details. Common applications include power supply design, motor driving, and load switching.
No detailed pinout data available for MRF6VP3450HSR5.
Refer to the datasheet for full pin configuration.
Typical Applications
MRF6VP3450HSR5 is suitable for 6 applications: UHF Digital TV Transmitter Final Stage, Analog UHF TV Transmitter Amplifier, Industrial RF Heating and Plasma Driver, Broadband Scientific Instrumentation Amplifier, Multi-Channel Combiner Broadcast Facility, High-Power RF Switch-Mode Driver Amplifier.
UHF Digital TV Transmitter Final Stage
The MRF6VP3450HSR5 delivers 450 W CW at 50 V across the 470-860 MHz UHF band with 22.5 dB typical gain, making it ideally suited for the final PA stage of DVB-T, ATSC, and ISDB-T digital television transmitters. Its broadband nature lets one design cover multiple channel allocations without retuning the output matching network. The 50 V bias point keeps DC infrastructure simple, and the high gain reduces driver-stage count, which improves overall transmitter efficiency and lowers total BOM cost.
Recommended
Analog UHF TV Transmitter Amplifier
In legacy analog NTSC/PAL/SECAM UHF transmitters operating between 470 and 860 MHz, the MRF6VP3450HSR5 provides the high CW power and broadband linearity that analog video carriers require. Its 110 V minimum drain breakdown gives ample headroom for analog modulation peaks, and its 22.5 dB gain allows a single-stage PA design in lower-power transmitters. The NI-1230 chassis-mount package simplifies field service and replacement in installed broadcast infrastructure.
Recommended
Industrial RF Heating and Plasma Driver
The 470-860 MHz band overlaps with several industrial-scientific-medical (ISM) allocations where high-power RF sources drive plasma reactors, RF drying ovens, and dielectric heaters. The MRF6VP3450HSR5's 450 W CW rating and rugged LDMOS construction handle the continuous-duty cycles typical of industrial RF heating. Its high gain reduces the number of driver stages needed, simplifying the overall RF chain. The bolt-down NI-1230 package mounts directly to a process-water-cooled heatsink for continuous operation.
Recommended
Broadband Scientific Instrumentation Amplifier
Research instruments such as NMR/MRI sub-systems, particle accelerator RF drivers, and plasma physics experiments require broadband high-power amplifiers in the UHF range. The MRF6VP3450HSR5 offers 450 W across the full 470-860 MHz span with 22.5 dB gain, allowing a single amplifier module to cover multiple experiment setups. The device's lateral MOSFET structure provides low memory effects and good pulse fidelity, important for scientific pulsed-RF applications up to the 90 W pulsed rating.
Recommended
Multi-Channel Combiner Broadcast Facility
Broadcast facilities often share antennas through channel combiners that require multiple high-power PAs operating on adjacent UHF channels. The MRF6VP3450HSR5's broadband matching and 22.5 dB gain allow several amplifiers to feed a single combiner with predictable phase and gain behavior across the band. Its 50 V bias simplifies shared power-supply design, while the bolt-down NI-1230 package enables standard 19-inch rack PA module construction used in shared transmitter sites.
Recommended
High-Power RF Switch-Mode Driver Amplifier
Although primarily marketed for linear broadcast service, the MRF6VP3450HSR5 also functions as a driver for higher-power tube or solid-state final stages in switch-mode DVB-T2 transmitter architectures. Its 22.5 dB gain and 50 V bias make it easy to interface with standard 50 V modulator/driver chains, while its 110 V breakdown withstands the transient overshoots of switch-mode combiners. The NI-1230 package supports direct water-cooling integration in high-duty-cycle service.
Recommended
Recommended Products Summary
Engineering reference data for MRF6VP3450HSR5 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MRF6VP3450HSR6 | MRF6VP3450HR5 | MRF6VP3450HR6 | MRF6VP3450HSR5 (Freescale) |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | Freescale Semiconductor |
| Package | NI-1230-4S | NI-1230-4S (same) | NI-1230-4S (same) | NI-1230-4S (same) | NI-1230-4S (same) |
| Frequency Range | 470-860 MHz | 470-860 MHz | 470-860 MHz | 470-860 MHz | 470-860 MHz |
| Test Voltage Vds | 50 V | 50 V | 50 V | 50 V | 50 V |
| Power Gain | 22.5 dB typical | 22.5 dB typical | 22.5 dB typical (HR sub-band) | 22.5 dB typical (HR sub-band) | 22.5 dB typical |
| Output Power (CW) | 450 W | 450 W | 450 W | 450 W | 450 W |
| Drain Breakdown Voltage | 110 V minimum | 110 V minimum | 110 V minimum | 110 V minimum | 110 V minimum |
Key Differentiators
- Highest gain (22.5 dB) in its UHF 450 W class (vs Generic 450 W UHF LDMOS competitors)
- Single broadband part covers full UHF TV band (vs Narrow-band competitor 450 W UHF parts)
- Same-package RoHS-revised sibling HSR6 available (vs MRF6VP3450HSR5 (R5 non-RoHS))
Design Notes
Estimated: at Pout = 450 W with typical 35% drain efficiency, the device dissipates roughly 835 W internally. The NI-1230 copper flange must be bolted to a heatsink with thermal compound and the case-to-sink thermal resistance kept below 0.1 C/W to maintain the flange below the 200 C rating. For continuous broadcast service a water-cooled cold plate is recommended; forced air with a high CFM fan is acceptable for laboratory or intermittent duty.
The NI-1230 package is chassis-mount rather than PCB-mount. Design the RF input and output networks on a separate low-loss substrate (Rogers RO4003C or similar) mounted adjacent to the package leads, with 50 ohm microstrip transitions tuned for the operating sub-band. Keep the gate matching network physically short - excessive lead inductance at the gate degrades gain and stability margin. Star-ground the bias feed on the output side to prevent feedback into the input network.
Do not operate the MRF6VP3450HSR5 without a sequenced 50 V drain supply - in-rush current can exceed the 1.4 A continuous Id rating and trip the bias controller. Always include an output circulator or isolator rated for at least 450 W CW to protect the device from antenna VSWR transients. The drain bias should be applied after the gate bias is established; remove gate bias first on shutdown. Exceeding 110 V Vds even transiently will permanently damage the die.
Mount the input and output matching networks orthogonally to minimize coupling between gate and drain. Use brass or copper mounting hardware for the NI-1230 flange to maximize thermal transfer. Place bias feed networks on the drain side well away from the input network and decouple them with at least 10 uF electrolytic plus 100 nF ceramic capacitors at the package lead. The bolt pattern must follow the NI-1230 datasheet outline exactly to avoid mechanical stress on the ceramic.
Compliance Information
RoHS and lead-free status not available in verified distributor data as of 2026-10-16 - the HSR5 designation suggests a non-RoHS BOM while the HSR6 sibling is the RoHS-revised variant per the NXP datasheet. AEC-Q100 not applicable (RF power transistor, not an automotive IC). Conflict-minerals compliance assumed per NXP corporate policy.
