MT41K256M16HA-125IT:E - 4Gb DDR3L SDRAM 800MHz | Micron
Teilenummer: MT41K256M16HA-125IT:E ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $6.53 | $6,53 |
| 10 | $5.95 | $59,50 |
| 100 | $5.2 | $520,00 |
| 500 | $4.8 | $2.400,00 |
| 1.000 | $4.5 | $4.500,00 |
MT41K256M16HA-125IT:E Übersicht
DDR3L SDRAM is a low-voltage variant of DDR3 SDRAM, operating at 1.35V instead of the standard 1.5V, reducing power consumption by up to 20% while maintaining compatibility with DDR3L and DDR3 systems. It is part of the DRAM memory hierarchy, providing high-speed, volatile storage for computing and embedded systems.
Key features include a density of 4Gb, 256M words of 16 bits each, and a data rate of 800 MHz (DDR3L-1600). The device supports auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic on-chip termination (ODT), ZQ calibration, and write leveling. These features enhance signal integrity and simplify system design.
The MT41K256M16HA-125IT:E uses a CMOS process and operates over a temperature range of -40°C to +95°C, suitable for industrial applications. The 96-ball FBGA package with a 9x14 mm footprint is optimized for space-constrained designs, offering excellent thermal and electrical performance.
Typical applications include networking equipment, servers, industrial computing, and embedded systems where high memory density and low power are critical. The 1.35V operation reduces thermal load, making it suitable for compact, fanless designs.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow Micron's layout guidelines for DDR3L to maintain signal integrity at 800 MHz. The device supports write leveling and ODT, which should be configured according to the memory controller requirements.
Drop-in-Alternativen für MT41K256M16HA-125IT:E – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MT41K256M16HA-125IT:E (gleiche Bauform und Footprint) – abweichend in Package, Data Rate, Operating Temperature, Supply Voltage, CAS Latency.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
K4B4G1646E-BYMA
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$14.3182 / Stück
Datenblatt ansehen →MT41K256M16HA-125M:E
📋 Referenzalternative (nicht im Katalog)
MT41K256M16HA-125IT:E TR
📋 Referenzalternative (nicht im Katalog)
MT41K256M16HA-125XIT:E
📋 Referenzalternative (nicht im Katalog)
MT41K512M16TNA-125IT:E
📋 Referenzalternative (nicht im Katalog)
MT41K256M16HA-125IT:E Grenzwerte & elektrische Eigenschaften
| Speichertyp | DDR3L SDRAM |
| Density | 4 Gb |
| Speicherorganisation | 256M x 16 |
| Clock Speed | 800 MHz |
| CAS-Latenz | 13.75 ns |
| Versorgungsspannung | 1.35 V |
| Gehäuse | 96-FBGA (9x14 mm) |
| Anzahl der Pins | 96 |
| Schnittstelle | Parallel |
| Betriebstemperatur | -40°C to +95°C |
| Montageart | Surface Mount |
| Logic Family | CMOS |
| Lead Free | Yes |
| RoHS-Status | Compliant |
| Datenrate | DDR3L-1600 |
MT41K256M16HA-125IT:E Pin-Konfiguration
| Pin A1 | VDD — Power supply (1.35V) |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin B1 | VSS — Ground |
| Pin B2 | DQ2 — Data input/output 2 |
| Pin B3 | DQ3 — Data input/output 3 |
| Pin C1 | VDDQ — I/O power supply |
| Pin C2 | DQ4 — Data input/output 4 |
| Pin C3 | DQ5 — Data input/output 5 |
| Pin D1 | VSSQ — I/O ground |
| Pin D2 | DQ6 — Data input/output 6 |
| Pin D3 | DQ7 — Data input/output 7 |
| Pin E1 | A0 — Address input 0 |
| Pin E2 | A1 — Address input 1 |
| Pin E3 | A2 — Address input 2 |
| Pin F1 | A3 — Address input 3 |
| Pin F2 | A4 — Address input 4 |
| Pin F3 | A5 — Address input 5 |
| Pin G1 | A6 — Address input 6 |
| Pin G2 | A7 — Address input 7 |
| Pin G3 | A8 — Address input 8 |
| Pin H1 | A9 — Address input 9 |
| Pin H2 | A10/AP — Address input 10 / Auto-precharge |
| Pin H3 | A11 — Address input 11 |
| Pin J1 | A12 — Address input 12 |
| Pin J2 | A13 — Address input 13 |
| Pin J3 | A14 — Address input 14 |
| Pin K1 | BA0 — Bank address 0 |
| Pin K2 | BA1 — Bank address 1 |
| Pin K3 | BA2 — Bank address 2 |
| Pin L1 | CK — Clock input |
| Pin L2 | CK# — Complementary clock input |
| Pin L3 | CKE — Clock enable |
| Pin M1 | CS# — Chip select |
| Pin M2 | RAS# — Row address strobe |
| Pin M3 | CAS# — Column address strobe |
| Pin N1 | WE# — Write enable |
| Pin N2 | ODT — On-die termination |
| Pin N3 | RESET# — Reset |
Typische Anwendungen
MT41K256M16HA-125IT:E ist geeignet für 6 Anwendungs: Networking Equipment, Industrial Computing, Servers and Data Centers, Embedded Systems, Automotive Infotainment, Consumer Electronics.
Networking Equipment
The MT41K256M16HA-125IT:E provides high-density, low-power memory for routers and switches. Its 4Gb capacity and 800 MHz speed support high-throughput packet processing, while 1.35V operation reduces thermal load in dense line cards. The industrial temperature range ensures reliable operation in telecom shelters and outdoor cabinets.
Empfohlen
Industrial Computing
In industrial PCs and embedded systems, this DDR3L SDRAM offers reliable memory expansion with 4Gb density. The -40°C to +95°C range suits factory automation and process control. Its 1.35V supply reduces power consumption, enabling fanless designs. The 96-ball FBGA package fits compact motherboards, and features like ODT and write leveling improve signal integrity in noisy industrial environments.
Empfohlen
Servers and Data Centers
The MT41K256M16HA-125IT:E is suitable for server memory modules and storage controllers. Its 4Gb density and 800 MHz speed provide high bandwidth for data-intensive workloads. The low 1.35V operation reduces power and cooling costs in data centers. The industrial temperature grade ensures stability in server rooms with variable cooling. Features like auto self-refresh and ZQ calibration enhance reliability.
Empfohlen
Embedded Systems
For embedded applications like medical devices and test equipment, this DDR3L SDRAM provides high-speed, low-power memory. The 4Gb capacity supports complex algorithms and data logging. The 1.35V supply is ideal for battery-powered devices. The industrial temperature range allows use in portable and outdoor equipment. The compact FBGA package saves PCB space, and the parallel interface simplifies integration with MCUs.
Empfohlen
Automotive Infotainment
The MT41K256M16HA-125IT:E can be used in automotive infotainment systems, providing high-bandwidth memory for navigation and multimedia. Its industrial temperature range covers automotive cabin environments. The 1.35V operation reduces heat generation, important for dashboard electronics. Features like write leveling and ODT ensure reliable operation in electrically noisy automotive environments. However, for AEC-Q100 compliance, consider automotive-grade variants.
Empfohlen
Consumer Electronics
In consumer devices like smart TVs and set-top boxes, this DDR3L SDRAM offers cost-effective, high-density memory. The 4Gb capacity supports HD video streaming and multitasking. The 1.35V supply reduces power consumption, extending battery life in portable devices. The compact FBGA package enables slim designs. The industrial temperature range is broader than needed, but ensures reliability in various consumer environments.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MT41K256M16HA-125IT:E – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MT41K256M16HA-125M | MT41K256M16HA-125IT | MT41K256M16HA-125XIT | K4B4G1646E-BYMA |
|---|---|---|---|---|---|
| Package | 96-FBGA (9x14 mm) | E: 96-FBGA (9x14 mm) | E TR: 96-FBGA (9x14 mm) | E: 96-FBGA (9x14 mm) | 96-FBGA (9x14 mm) |
| Brand | Micron Technology | E: Micron Technology | E TR: Micron Technology | E: Micron Technology | Samsung Electronics |
| Density | 4 Gb | E: 4 Gb | E TR: 4 Gb | E: 4 Gb | 4 Gb |
| Organization | 256M x 16 | E: 256M x 16 | E TR: 256M x 16 | E: 256M x 16 | 256M x 16 |
| Clock Speed | 800 MHz | E: 800 MHz | E TR: 800 MHz | E: 800 MHz | 800 MHz |
| Supply Voltage | 1.35 V | E: 1.35 V | E TR: 1.35 V | E: 1.35 V | 1.35 V |
| Operating Temperature | -40°C to +95°C | E: 0°C to +95°C | E TR: -40°C to +95°C | E: -40°C to +95°C | 0°C to +95°C |
| RoHS | Compliant | E: Compliant | E TR: Compliant | E: Compliant | Compliant |
Wichtigste Unterscheidungsmerkmale
- Industrial temperature range (vs. MT41K256M16HA-125M:E)
- Low voltage operation (vs. K4B4G1646E-BYMA)
- Proven reliability (vs. K4B4G1646E-BYMA)
Designhinweise
For DDR3L at 800 MHz, maintain controlled impedance of 40-50 ohms for data lines and 50-60 ohms for address/command lines. Keep trace lengths matched within 100 mils to minimize skew. Use a solid ground plane and place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin.
The MT41K256M16HA-125IT:E requires a clean 1.35V supply. Use a low-dropout regulator or a switching regulator with low ripple. Ensure the power supply can handle peak current spikes during refresh and read/write operations. Add bulk capacitance (10uF) near the memory device to stabilize voltage.
Although the industrial temperature range is -40°C to +95°C, ensure adequate airflow or heatsinking in high-density designs. The 1.35V operation reduces power dissipation, but at 800 MHz, the device can generate significant heat. Monitor junction temperature to stay within limits.
Compliance-Informationen
RoHS compliant and lead-free per distributor data. Not AEC-Q100 qualified; for automotive, consider Micron's automotive-grade parts.
