MT41K256M16HA-125IT:E - 4Gb DDR3L SDRAM 800MHz | Micron
MPN: MT41K256M16HA-125IT:E ✓ Hoạt độngMT41K256M16HA-125IT:E Tóm tắt
DDR3L SDRAM is a low-voltage variant of DDR3 SDRAM, operating at 1.35V instead of the standard 1.5V, reducing power consumption by up to 20% while maintaining compatibility with DDR3L and DDR3 systems. It is part of the DRAM memory hierarchy, providing high-speed, volatile storage for computing and embedded systems.
Key features include a density of 4Gb, 256M words of 16 bits each, and a data rate of 800 MHz (DDR3L-1600). The device supports auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic on-chip termination (ODT), ZQ calibration, and write leveling. These features enhance signal integrity and simplify system design.
The MT41K256M16HA-125IT:E uses a CMOS process and operates over a temperature range of -40°C to +95°C, suitable for industrial applications. The 96-ball FBGA package with a 9x14 mm footprint is optimized for space-constrained designs, offering excellent thermal and electrical performance.
Typical applications include networking equipment, servers, industrial computing, and embedded systems where high memory density and low power are critical. The 1.35V operation reduces thermal load, making it suitable for compact, fanless designs.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow Micron's layout guidelines for DDR3L to maintain signal integrity at 800 MHz. The device supports write leveling and ODT, which should be configured according to the memory controller requirements.
Bộ thay thế dễ dàng lắp đặt cho MT41K256M16HA-125IT:E — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với MT41K256M16HA-125IT:E (cùng hình factor và footprint) — khác nhau ở Package, Data Rate, Operating Temperature, Supply Voltage, CAS Latency.
K4B4G1646E-BYMA
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MT41K256M16HA-125IT:E TR
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MT41K256M16HA-125XIT:E
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MT41K512M16TNA-125IT:E
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MT41K256M16HA-125IT:E Tỷ lệ tối đa & tính chất điện
| Kiểu bộ nhớ | DDR3L SDRAM |
| Density | 4 Gb |
| Tổ chức | 256M x 16 |
| Clock Speed | 800 MHz |
| Latency CAS | 13.75 ns |
| Điện áp cung cấp | 1.35 V |
| Hộp | 96-FBGA (9x14 mm) |
| Số lượng chân | 96 |
| Giao diện | Parallel |
| Nhiệt độ hoạt động | -40°C to +95°C |
| Kiểu lắp đặt | Surface Mount |
| Logic Family | CMOS |
| Lead Free | Yes |
| Trạng thái RoHS | Compliant |
| Tốc độ dữ liệu | DDR3L-1600 |
Cấu hình chân MT41K256M16HA-125IT:E
| Chân A1 | VDD — Power supply (1.35V) |
| Chân A2 | DQ0 — Data input/output 0 |
| Chân A3 | DQ1 — Data input/output 1 |
| Chân B1 | VSS — Ground |
| Chân B2 | DQ2 — Data input/output 2 |
| Chân B3 | DQ3 — Data input/output 3 |
| Chân C1 | VDDQ — I/O power supply |
| Chân C2 | DQ4 — Data input/output 4 |
| Chân C3 | DQ5 — Data input/output 5 |
| Chân D1 | VSSQ — I/O ground |
| Chân D2 | DQ6 — Data input/output 6 |
| Chân D3 | DQ7 — Data input/output 7 |
| Chân E1 | A0 — Address input 0 |
| Chân E2 | A1 — Address input 1 |
| Chân E3 | A2 — Address input 2 |
| Chân F1 | A3 — Address input 3 |
| Chân F2 | A4 — Address input 4 |
| Chân F3 | A5 — Address input 5 |
| Chân G1 | A6 — Address input 6 |
| Chân G2 | A7 — Address input 7 |
| Chân G3 | A8 — Address input 8 |
| Chân H1 | A9 — Address input 9 |
| Chân H2 | A10/AP — Address input 10 / Auto-precharge |
| Chân H3 | A11 — Address input 11 |
| Chân J1 | A12 — Address input 12 |
| Chân J2 | A13 — Address input 13 |
| Chân J3 | A14 — Address input 14 |
| Chân K1 | BA0 — Bank address 0 |
| Chân K2 | BA1 — Bank address 1 |
| Chân K3 | BA2 — Bank address 2 |
| Chân L1 | CK — Clock input |
| Chân L2 | CK# — Complementary clock input |
| Chân L3 | CKE — Clock enable |
| Chân M1 | CS# — Chip select |
| Chân M2 | RAS# — Row address strobe |
| Chân M3 | CAS# — Column address strobe |
| Chân N1 | WE# — Write enable |
| Chân N2 | ODT — On-die termination |
| Chân N3 | RESET# — Reset |
Ứng dụng tiêu biểu
MT41K256M16HA-125IT:E phù hợp cho 6 Áp dụngs: Networking Equipment, Industrial Computing, Servers and Data Centers, Embedded Systems, Automotive Infotainment, Consumer Electronics.
Networking Equipment
The MT41K256M16HA-125IT:E provides high-density, low-power memory for routers and switches. Its 4Gb capacity and 800 MHz speed support high-throughput packet processing, while 1.35V operation reduces thermal load in dense line cards. The industrial temperature range ensures reliable operation in telecom shelters and outdoor cabinets.
Được đề xuất
Industrial Computing
In industrial PCs and embedded systems, this DDR3L SDRAM offers reliable memory expansion with 4Gb density. The -40°C to +95°C range suits factory automation and process control. Its 1.35V supply reduces power consumption, enabling fanless designs. The 96-ball FBGA package fits compact motherboards, and features like ODT and write leveling improve signal integrity in noisy industrial environments.
Được đề xuất
Servers and Data Centers
The MT41K256M16HA-125IT:E is suitable for server memory modules and storage controllers. Its 4Gb density and 800 MHz speed provide high bandwidth for data-intensive workloads. The low 1.35V operation reduces power and cooling costs in data centers. The industrial temperature grade ensures stability in server rooms with variable cooling. Features like auto self-refresh and ZQ calibration enhance reliability.
Được đề xuất
Embedded Systems
For embedded applications like medical devices and test equipment, this DDR3L SDRAM provides high-speed, low-power memory. The 4Gb capacity supports complex algorithms and data logging. The 1.35V supply is ideal for battery-powered devices. The industrial temperature range allows use in portable and outdoor equipment. The compact FBGA package saves PCB space, and the parallel interface simplifies integration with MCUs.
Được đề xuất
Automotive Infotainment
The MT41K256M16HA-125IT:E can be used in automotive infotainment systems, providing high-bandwidth memory for navigation and multimedia. Its industrial temperature range covers automotive cabin environments. The 1.35V operation reduces heat generation, important for dashboard electronics. Features like write leveling and ODT ensure reliable operation in electrically noisy automotive environments. However, for AEC-Q100 compliance, consider automotive-grade variants.
Được đề xuất
Consumer Electronics
In consumer devices like smart TVs and set-top boxes, this DDR3L SDRAM offers cost-effective, high-density memory. The 4Gb capacity supports HD video streaming and multitasking. The 1.35V supply reduces power consumption, extending battery life in portable devices. The compact FBGA package enables slim designs. The industrial temperature range is broader than needed, but ensures reliability in various consumer environments.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho MT41K256M16HA-125IT:E — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | MT41K256M16HA-125M | MT41K256M16HA-125IT | MT41K256M16HA-125XIT | K4B4G1646E-BYMA |
|---|---|---|---|---|---|
| Package | 96-FBGA (9x14 mm) | E: 96-FBGA (9x14 mm) | E TR: 96-FBGA (9x14 mm) | E: 96-FBGA (9x14 mm) | 96-FBGA (9x14 mm) |
| Brand | Micron Technology | E: Micron Technology | E TR: Micron Technology | E: Micron Technology | Samsung Electronics |
| Density | 4 Gb | E: 4 Gb | E TR: 4 Gb | E: 4 Gb | 4 Gb |
| Organization | 256M x 16 | E: 256M x 16 | E TR: 256M x 16 | E: 256M x 16 | 256M x 16 |
| Clock Speed | 800 MHz | E: 800 MHz | E TR: 800 MHz | E: 800 MHz | 800 MHz |
| Supply Voltage | 1.35 V | E: 1.35 V | E TR: 1.35 V | E: 1.35 V | 1.35 V |
| Operating Temperature | -40°C to +95°C | E: 0°C to +95°C | E TR: -40°C to +95°C | E: -40°C to +95°C | 0°C to +95°C |
| RoHS | Compliant | E: Compliant | E TR: Compliant | E: Compliant | Compliant |
Bảo phân biệt quan trọng
- Industrial temperature range (vsMT41K256M16HA-125M:E)
- Low voltage operation (vsK4B4G1646E-BYMA)
- Proven reliability (vsK4B4G1646E-BYMA)
Ghi chú thiết kế
For DDR3L at 800 MHz, maintain controlled impedance of 40-50 ohms for data lines and 50-60 ohms for address/command lines. Keep trace lengths matched within 100 mils to minimize skew. Use a solid ground plane and place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin.
The MT41K256M16HA-125IT:E requires a clean 1.35V supply. Use a low-dropout regulator or a switching regulator with low ripple. Ensure the power supply can handle peak current spikes during refresh and read/write operations. Add bulk capacitance (10uF) near the memory device to stabilize voltage.
Although the industrial temperature range is -40°C to +95°C, ensure adequate airflow or heatsinking in high-density designs. The 1.35V operation reduces power dissipation, but at 800 MHz, the device can generate significant heat. Monitor junction temperature to stay within limits.
Thông tin tuân thủ
RoHS compliant and lead-free per distributor data. Not AEC-Q100 qualified; for automotive, consider Micron's automotive-grade parts.
