MT41K256M16HA-125IT:E - 4Gb DDR3L SDRAM 800MHz | Micron
Référence : MT41K256M16HA-125IT:E ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $6.53 | $6,53 |
| 10 | $5.95 | $59,50 |
| 100 | $5.2 | $520,00 |
| 500 | $4.8 | $2 400,00 |
| 1 000 | $4.5 | $4 500,00 |
MT41K256M16HA-125IT:E Présentation
DDR3L SDRAM is a low-voltage variant of DDR3 SDRAM, operating at 1.35V instead of the standard 1.5V, reducing power consumption by up to 20% while maintaining compatibility with DDR3L and DDR3 systems. It is part of the DRAM memory hierarchy, providing high-speed, volatile storage for computing and embedded systems.
Key features include a density of 4Gb, 256M words of 16 bits each, and a data rate of 800 MHz (DDR3L-1600). The device supports auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic on-chip termination (ODT), ZQ calibration, and write leveling. These features enhance signal integrity and simplify system design.
The MT41K256M16HA-125IT:E uses a CMOS process and operates over a temperature range of -40°C to +95°C, suitable for industrial applications. The 96-ball FBGA package with a 9x14 mm footprint is optimized for space-constrained designs, offering excellent thermal and electrical performance.
Typical applications include networking equipment, servers, industrial computing, and embedded systems where high memory density and low power are critical. The 1.35V operation reduces thermal load, making it suitable for compact, fanless designs.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow Micron's layout guidelines for DDR3L to maintain signal integrity at 800 MHz. The device supports write leveling and ODT, which should be configured according to the memory controller requirements.
Alternatives de remplacement direct pour MT41K256M16HA-125IT:E — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec MT41K256M16HA-125IT:E (même facteur de forme et même empreinte) — différant par Package, Data Rate, Operating Temperature, Supply Voltage, CAS Latency.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K4B4G1646E-BYMA
✓ En stock
$14.3182 / unité
Voir la fiche technique →MT41K256M16HA-125M:E
📋 Alternative de référence (hors catalogue)
MT41K256M16HA-125IT:E TR
📋 Alternative de référence (hors catalogue)
MT41K256M16HA-125XIT:E
📋 Alternative de référence (hors catalogue)
MT41K512M16TNA-125IT:E
📋 Alternative de référence (hors catalogue)
MT41K256M16HA-125IT:E Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Density | 4 Gb |
| Organisation de la mémoire | 256M x 16 |
| Clock Speed | 800 MHz |
| Latence CAS | 13.75 ns |
| Tension d'alimentation | 1.35 V |
| Boîtier | 96-FBGA (9x14 mm) |
| Nombre de broches | 96 |
| Interface | Parallel |
| Température de fonctionnement | -40°C to +95°C |
| Type de montage | Surface Mount |
| Logic Family | CMOS |
| Lead Free | Yes |
| Statut RoHS | Compliant |
| Débit de données | DDR3L-1600 |
Configuration des broches de MT41K256M16HA-125IT:E
| Broche A1 | VDD — Power supply (1.35V) |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche B1 | VSS — Ground |
| Broche B2 | DQ2 — Data input/output 2 |
| Broche B3 | DQ3 — Data input/output 3 |
| Broche C1 | VDDQ — I/O power supply |
| Broche C2 | DQ4 — Data input/output 4 |
| Broche C3 | DQ5 — Data input/output 5 |
| Broche D1 | VSSQ — I/O ground |
| Broche D2 | DQ6 — Data input/output 6 |
| Broche D3 | DQ7 — Data input/output 7 |
| Broche E1 | A0 — Address input 0 |
| Broche E2 | A1 — Address input 1 |
| Broche E3 | A2 — Address input 2 |
| Broche F1 | A3 — Address input 3 |
| Broche F2 | A4 — Address input 4 |
| Broche F3 | A5 — Address input 5 |
| Broche G1 | A6 — Address input 6 |
| Broche G2 | A7 — Address input 7 |
| Broche G3 | A8 — Address input 8 |
| Broche H1 | A9 — Address input 9 |
| Broche H2 | A10/AP — Address input 10 / Auto-precharge |
| Broche H3 | A11 — Address input 11 |
| Broche J1 | A12 — Address input 12 |
| Broche J2 | A13 — Address input 13 |
| Broche J3 | A14 — Address input 14 |
| Broche K1 | BA0 — Bank address 0 |
| Broche K2 | BA1 — Bank address 1 |
| Broche K3 | BA2 — Bank address 2 |
| Broche L1 | CK — Clock input |
| Broche L2 | CK# — Complementary clock input |
| Broche L3 | CKE — Clock enable |
| Broche M1 | CS# — Chip select |
| Broche M2 | RAS# — Row address strobe |
| Broche M3 | CAS# — Column address strobe |
| Broche N1 | WE# — Write enable |
| Broche N2 | ODT — On-die termination |
| Broche N3 | RESET# — Reset |
Applications typiques
MT41K256M16HA-125IT:E convient pour 6 applications: Networking Equipment, Industrial Computing, Servers and Data Centers, Embedded Systems, Automotive Infotainment, Consumer Electronics.
Networking Equipment
The MT41K256M16HA-125IT:E provides high-density, low-power memory for routers and switches. Its 4Gb capacity and 800 MHz speed support high-throughput packet processing, while 1.35V operation reduces thermal load in dense line cards. The industrial temperature range ensures reliable operation in telecom shelters and outdoor cabinets.
Recommandé
Industrial Computing
In industrial PCs and embedded systems, this DDR3L SDRAM offers reliable memory expansion with 4Gb density. The -40°C to +95°C range suits factory automation and process control. Its 1.35V supply reduces power consumption, enabling fanless designs. The 96-ball FBGA package fits compact motherboards, and features like ODT and write leveling improve signal integrity in noisy industrial environments.
Recommandé
Servers and Data Centers
The MT41K256M16HA-125IT:E is suitable for server memory modules and storage controllers. Its 4Gb density and 800 MHz speed provide high bandwidth for data-intensive workloads. The low 1.35V operation reduces power and cooling costs in data centers. The industrial temperature grade ensures stability in server rooms with variable cooling. Features like auto self-refresh and ZQ calibration enhance reliability.
Recommandé
Embedded Systems
For embedded applications like medical devices and test equipment, this DDR3L SDRAM provides high-speed, low-power memory. The 4Gb capacity supports complex algorithms and data logging. The 1.35V supply is ideal for battery-powered devices. The industrial temperature range allows use in portable and outdoor equipment. The compact FBGA package saves PCB space, and the parallel interface simplifies integration with MCUs.
Recommandé
Automotive Infotainment
The MT41K256M16HA-125IT:E can be used in automotive infotainment systems, providing high-bandwidth memory for navigation and multimedia. Its industrial temperature range covers automotive cabin environments. The 1.35V operation reduces heat generation, important for dashboard electronics. Features like write leveling and ODT ensure reliable operation in electrically noisy automotive environments. However, for AEC-Q100 compliance, consider automotive-grade variants.
Recommandé
Consumer Electronics
In consumer devices like smart TVs and set-top boxes, this DDR3L SDRAM offers cost-effective, high-density memory. The 4Gb capacity supports HD video streaming and multitasking. The 1.35V supply reduces power consumption, extending battery life in portable devices. The compact FBGA package enables slim designs. The industrial temperature range is broader than needed, but ensures reliability in various consumer environments.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MT41K256M16HA-125IT:E — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MT41K256M16HA-125M | MT41K256M16HA-125IT | MT41K256M16HA-125XIT | K4B4G1646E-BYMA |
|---|---|---|---|---|---|
| Package | 96-FBGA (9x14 mm) | E: 96-FBGA (9x14 mm) | E TR: 96-FBGA (9x14 mm) | E: 96-FBGA (9x14 mm) | 96-FBGA (9x14 mm) |
| Brand | Micron Technology | E: Micron Technology | E TR: Micron Technology | E: Micron Technology | Samsung Electronics |
| Density | 4 Gb | E: 4 Gb | E TR: 4 Gb | E: 4 Gb | 4 Gb |
| Organization | 256M x 16 | E: 256M x 16 | E TR: 256M x 16 | E: 256M x 16 | 256M x 16 |
| Clock Speed | 800 MHz | E: 800 MHz | E TR: 800 MHz | E: 800 MHz | 800 MHz |
| Supply Voltage | 1.35 V | E: 1.35 V | E TR: 1.35 V | E: 1.35 V | 1.35 V |
| Operating Temperature | -40°C to +95°C | E: 0°C to +95°C | E TR: -40°C to +95°C | E: -40°C to +95°C | 0°C to +95°C |
| RoHS | Compliant | E: Compliant | E TR: Compliant | E: Compliant | Compliant |
Principaux différenciateurs
- Industrial temperature range (vs MT41K256M16HA-125M:E)
- Low voltage operation (vs K4B4G1646E-BYMA)
- Proven reliability (vs K4B4G1646E-BYMA)
Notes de conception
For DDR3L at 800 MHz, maintain controlled impedance of 40-50 ohms for data lines and 50-60 ohms for address/command lines. Keep trace lengths matched within 100 mils to minimize skew. Use a solid ground plane and place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin.
The MT41K256M16HA-125IT:E requires a clean 1.35V supply. Use a low-dropout regulator or a switching regulator with low ripple. Ensure the power supply can handle peak current spikes during refresh and read/write operations. Add bulk capacitance (10uF) near the memory device to stabilize voltage.
Although the industrial temperature range is -40°C to +95°C, ensure adequate airflow or heatsinking in high-density designs. The 1.35V operation reduces power dissipation, but at 800 MHz, the device can generate significant heat. Monitor junction temperature to stay within limits.
Informations de conformité
RoHS compliant and lead-free per distributor data. Not AEC-Q100 qualified; for automotive, consider Micron's automotive-grade parts.
