NVHL072N120SC1 - 1200V SiC MOSFET, Low RDS(on) | onsemi
Teilenummer: NVHL072N120SC1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.65 | $76,50 |
| 100 | $6.8 | $680,00 |
| 500 | $6.1 | $3.050,00 |
| 1.000 | $5.45 | $5.450,00 |
NVHL072N120SC1 Übersicht
A silicon carbide MOSFET is a type of power transistor that uses a wide-bandgap semiconductor instead of silicon. The wider bandgap (~3.2 eV vs 1.1 eV for silicon) allows the device to block higher voltages, switch faster, and achieve lower specific on-resistance than comparable silicon superjunction or IGBT devices. Within the power semiconductor hierarchy, the SiC MOSFET sits alongside the silicon MOSFET and IGBT as a switch for power conversion, typically driven by a dedicated gate driver IC.
Key features of the NVHL072N120SC1 family include a very low typical RDS(on), ultra-low total gate charge (approximately 56 nC typ. for the related 80 mohm NVHL080N120SC1), and low effective output capacitance (typ. Coss around 80 pF for the 80 mohm variant), all of which reduce switching losses and enable higher switching frequencies. The device is 100% UIL (unclamped inductive load) tested, is AEC-Q101 qualified and PPAP capable, and is halide-free and RoHS compliant, making it suitable for demanding automotive and industrial environments.
Technically, the M1 planar SiC technology delivers superior switching performance and higher reliability compared with silicon devices. The low on-resistance combined with a compact die size yields low gate charge and capacitance; system-level benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced overall system size. These attributes make the part a strong replacement for 1200 V-class IGBTs in hard-switched and resonant topologies.
Typical applications include electric vehicle onboard chargers and DC-DC converters, solar string inverters, three-phase motor drives, industrial power supplies, and DC fast-charging infrastructure. In each case, the 1200 V blocking rating supports direct connection to high-voltage DC buses while the low switching charge keeps losses manageable at 20-100 kHz.
A key design consideration is gate-drive quality: SiC MOSFETs switch quickly, so a tightly coupled gate loop, an appropriate positive/negative gate drive voltage, and careful kelvin-source or low-inductance layout are essential to control ringing and EMI.
This page synthesizes verified distributor data, same-family drop-in alternatives, and practical SiC design notes not found in the manufacturer datasheet alone.
Drop-in-Alternativen für NVHL072N120SC1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit NVHL072N120SC1 (gleiche Bauform und Footprint) – abweichend in Package, Technology.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
NVHL080N120SC1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
NTHL080N120SC1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
NVHL072N120SC1 Grenzwerte & elektrische Eigenschaften
| Device Type | N-Channel Silicon Carbide (SiC) MOSFET, EliteSiC |
| Drain-Source Voltage (VDS) | 1200 V |
| Technology | M1 planar SiC |
| Gehäuse | TO-247-3 (through hole) |
| Montageart | Through Hole |
| 100% UIL Tested | Yes |
| AEC-Q101 | Qualified |
| PPAP | Capable |
| Halide Free | Yes |
| RoHS-Status | Compliant |
NVHL072N120SC1 Pin-Konfiguration
| Pin 1 | G (Gate) — Gate control terminal |
| Pin 2 | D (Drain) — Drain, connected to package tab |
| Pin 3 | S (Source) — Source terminal |
Typische Anwendungen
NVHL072N120SC1 ist geeignet für 6 Anwendungs: EV Onboard Charger (OBC), Solar String Inverter, DC Fast Charging Power Modules, Industrial Three-Phase Motor Drives, High-Voltage DC-DC Converters and Auxiliary Supplies, Energy Storage System (ESS) Bidirectional Converters.
EV Onboard Charger (OBC)
The NVHL072N120SC1 fits EV onboard chargers because its 1200 V blocking rating directly supports 800 V battery systems and PFC stages rectified from global three-phase AC, while the approximately 72 mohm grade minimizes conduction loss at the 10-20 A continuous currents typical of 7-22 kW OBC power stages. In totem-pole PFC and CLLC resonant DC-DC stages, the low family-typical gate charge (56 nC typ. for the 80 mohm sibling) and low Coss reduce both gate-drive and switching losses, allowing 50-100 kHz operation that shrinks transformer and inductor volume. AEC-Q101 qualification and PPAP capability remove an automotive qualification barrier, and 100% UIL testing adds robustness against abnormal switching events. Place the device with a negative-bias-capable gate driver and tight power loop to control ringing at high dv/dt.
Empfohlen
Solar String Inverter
In solar string inverters, the 1200 V rating of the NVHL072N120SC1 is a direct match for 1100 V DC maximum photovoltaic bus voltages with margin for surges. The approximately 72 mohm on-resistance reduces conduction loss in the boost and neutral-point-clamped inverter legs, improving peak and weighted European efficiency figures, while the low effective output capacitance (about 80 pF typ. in the 80 mohm family member) keeps ZVS transitions crisp in resonant or partially soft-switched topologies. Higher switching frequency versus IGBT solutions shrinks magnetics and enables higher power density for wall-mounted inverters. Halide-free, RoHS-compliant construction simplifies environmental compliance for global grid markets. Engineers should budget for surge events per the inverter standards and verify UIS margin, aided by the 100% UIL screen performed on this device family.
Empfohlen
DC Fast Charging Power Modules
DC fast chargers stack power modules on a three-phase PFC plus LLC or DCX architecture where the NVHL072N120SC1 serves in both the PFC switches and the secondary-side synchronous-rectifier-equivalent positions. The 1200 V class handles 800 V DC bus architectures directly, and the low RDS(on) grade limits conduction losses across the wide 150-1000 V output range of fast chargers. Family-typical low QG(tot) around 56 nC (80 mohm sibling) and low Coss reduce per-cycle losses at the 50-100 kHz switching frequencies used for power density targets of 2-4 kW/L. The 100% UIL test screen provides robustness under fault transients common in public charging infrastructure. Use kelvin-source connection or minimize source inductance in the gate loop to preserve clean switching at high di/dt.
Empfohlen
Industrial Three-Phase Motor Drives
For industrial variable-frequency drives on 690 V AC lines, the rectified DC bus sits near 1000 V, making the 1200 V NVHL072N120SC1 an appropriate switch for the inverter bridge. Compared with 1200 V IGBT modules, the SiC MOSFET's lack of tail current cuts turn-off energy substantially, permitting higher PWM frequencies (20-50 kHz) that reduce motor acoustic noise, current ripple, and dc-link capacitor stress. The approximately 72 mohm grade sustains the continuous phase currents of mid-power drives while maintaining efficiency at partial load, where drives spend most operating hours. AEC-Q101 qualification exceeds industrial reliability requirements, giving margin for harsh dusty and thermally cycling environments. Designers should apply negative gate bias at turn-off and snubber the DC link to control dv/dt-induced bearing currents and reflected-wave stress on long motor cables.
Empfohlen
High-Voltage DC-DC Converters and Auxiliary Supplies
In telecom rectifiers, energy-storage converters, and railway auxiliary supplies, the NVHL072N120SC1 enables LLC, phase-shifted full-bridge, and dual-active-bridge converters operating from 400-800 V DC links. The low effective output capacitance (family-typical 80 pF on the 80 mohm sibling) preserves zero-voltage-switching over a wide load range, which is the dominant loss mechanism in hard-driven high-voltage LLC designs. Its approximately 72 mohm RDS(on) limits conduction loss during high-current bursts such as battery pre-charge and overload conditions. The TO-247-3 through-hole package provides high isolation creepage and easy thermal mounting on forced-air heatsinks common in these systems. Verify VGS limits in the datasheet and select a driver with adjustable gate resistance to tune dv/dt against EMI class requirements.
Empfohlen
Energy Storage System (ESS) Bidirectional Converters
Battery energy storage converters use bidirectional AC-DC stages and high-voltage DC-DC stages where the NVHL072N120SC1's 1200 V rating and low on-resistance grade support 1000 V-class battery strings and grid-tie inverters. Because ESS converters cycle continuously at partial load, the SiC MOSFET's flat efficiency curve - no IGBT knee voltage - yields measurably lower energy loss per round trip, directly improving the system's round-trip efficiency metric. Low family gate charge around 56 nC (80 mohm sibling) trims gate-drive losses across the many parallel switches typical of 100 kW+ racks. AEC-Q101 qualification and PPAP capability ease reliability audits demanded by utility-scale ESS procurement. Apply active Miller clamping and symmetric gate resistors to prevent spurious turn-on in fast hard-switched half-bridge legs.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für NVHL072N120SC1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | NVHL080N120SC1 | NTHL080N120SC1 |
|---|---|---|---|
| Package | TO-247-3 | TO-247-3 - same | TO-247-3 - same |
| Brand | onsemi | onsemi | onsemi |
| VDS Rating | 1200 V | 1200 V | 1200 V |
| RDS(on) Grade | ~72 mohm | 80 mohm | 80 mohm |
| Qualification Flow | AEC-Q101, PPAP capable | AEC-Q101, PPAP capable | Standard industrial flow |
| 100% UIL Tested | Yes | Yes | Yes |
| RoHS / Halide Free | Yes / Yes | Yes / Yes | Yes / Yes |
Wichtigste Unterscheidungsmerkmale
- Lowest conduction loss in the verified drop-in group (vs. NVHL080N120SC1)
- Automotive qualification preserved (vs. NTHL080N120SC1)
- Fast switching with low charge (vs. 1200 V silicon IGBTs (general))
Designhinweise
Minimize the power loop and gate loop inductance. In the TO-247-3 package the drain is the tab, so place the DC-link decoupling capacitors directly across the bus with the smallest possible loop to the device. Common-source inductance in the gate return path converts high di/dt into gate-source voltage spikes that can cause spurious turn-on in the complementary device; use a dedicated gate return trace (poor-man's kelvin) or a kelvin-source TO-247-4 family member where ringing is critical.
Drive EliteSiC M1 devices with the positive gate voltage specified in the onsemi datasheet and apply 0 V or slight negative bias at turn-off. Under-driving increases RDS(on) and conduction loss; over-driving risks gate-oxide reliability limits. Choose a dedicated SiC gate driver (e.g. onsemi NCD57000 or NCP51820) with adjustable gate resistance, and start with the datasheet's recommended Rg values when tuning dv/dt against EMI.
Estimated: junction temperature governs RDS(on) in SiC MOSFETs - on-resistance rises with temperature, so calculate conduction loss at operating TJ, not 25 C. For TO-247-3 devices, budget thermal interface material resistance and use a forced-air heatsink sized from the datasheet RthJC plus RthCS plus heatsink chain; verify TJ stays below the datasheet maximum with margin under worst-case load and ambient.
Do not treat the 72 mohm and 80 mohm grades as loss-identical when substituting NVHL080N120SC1 or NTHL080N120SC1 into an NVHL072N120SC1 layout: conduction loss scales with RDS(on), so re-run the thermal and efficiency analysis. Also confirm the qualification flow requirement (AEC-Q101/PPAP vs standard industrial) - the NTHL prefix may not satisfy automotive PPAP documentation.
Compliance-Informationen
Per onsemi product data: AEC-Q101 qualified (discrete device standard; AEC-Q101 is the discrete counterpart of AEC-Q100), PPAP capable, halide-free, RoHS compliant.
