NTHL040N120SC1 - 1200V 40mΩ SiC MOSFET TO-247 | onsemi
Teilenummer: NTHL040N120SC1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $8.42 | $8,42 |
| 10 | $7.58 | $75,80 |
| 100 | $6.73 | $673,00 |
| 500 | $6.04 | $3.020,00 |
| 1.000 | $5.47 | $5.470,00 |
NTHL040N120SC1 Übersicht
A SiC MOSFET is a unipolar power transistor that uses silicon carbide rather than silicon as the semiconductor material. Because SiC has roughly ten times the critical breakdown field of silicon, the drift region can be made far thinner and more heavily doped for a given blocking voltage, producing much lower on-resistance per unit area, lower gate charge, and the ability to operate at higher junction temperatures. Within the power-semiconductor hierarchy, the NTHL040N120SC1 sits at the device level of power management: SiC MOSFET -> power transistor -> discrete power switch -> power conversion system.
Key features include a 1200 V drain-source breakdown rating, 40 mΩ maximum on-resistance for low conduction loss, 60 A continuous current capability (Tc), and 613 mJ avalanche energy (EAS) starting from Tj = 25C with L = 1 mH, IAS = 35 A. The compact chip size ensures low capacitance and gate charge, directly reducing switching losses.
Technically, the EliteSiC M1 platform delivers superior switching performance and higher reliability compared to silicon IGBTs and superjunction MOSFETs. System-level benefits documented by onsemi include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.
Typical applications include solar string inverters, EV on-board chargers and DC fast charging, three-phase motor drives, server and telecom power supplies, and energy storage converters.
Design consideration: always verify the gate drive level and use an appropriate gate resistor to control dv/dt; SiC devices switch faster than silicon, so layout inductance minimization matters.
This page synthesizes distributor pricing tiers, drop-in alternatives, comparison tables, and practical design notes not found in the manufacturer datasheet.
Drop-in-Alternativen für NTHL040N120SC1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit NTHL040N120SC1 (gleiche Bauform und Footprint) – abweichend in Package, Technology.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
NTHL020N120SC1
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
NTHL015N120SC1
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
NTHL080N120SC1
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
NVHL072N120SC1
✅ Drop-In✓ Auf Lager
$5.45 / Stück
Datenblatt ansehen →NTHL040N120SC1 Grenzwerte & elektrische Eigenschaften
| Technology | Silicon Carbide (SiC), EliteSiC M1 |
| Channel Type | N-Channel |
| VDS (Drain-Source Voltage) | 1200 V |
| RDS(on) (Max) | 40 mΩ |
| Continuous Drain Current (Tc) | 60 A |
| Power Dissipation (Tc) | 348 W |
| Avalanche Energy EAS | 613 mJ (Tj = 25C, L = 1 mH, IAS = 35 A) |
| Gehäuse | TO-247-3L (Through Hole) |
| Montageart | Through Hole |
| Configuration | Single FET |
| RoHS-Status | Compliant |
NTHL040N120SC1 Pin-Konfiguration
| Pin 1 | G — Gate - control terminal for switching |
| Pin 2 | D — Drain - connected to metal mounting tab |
| Pin 3 | S — Source - power and gate-return path (TO-247-3L non-Kelvin) |
Sicherer Arbeitsbereich
Typische Anwendungen
NTHL040N120SC1 ist geeignet für 6 Anwendungs: Solar String Inverter Boost Stage, EV On-Board Charger (OBC), DC Fast Charging Infrastructure, Three-Phase Industrial Motor Drives, Server and Telecom Power Supplies, Energy Storage System (ESS) Converters.
Solar String Inverter Boost Stage
The NTHL040N120SC1 fits solar string inverter boost converters because its 1200 V blocking rating comfortably supports 800-1100 V DC bus architectures derived from modern high-voltage panel strings, while the 40 mΩ on-resistance keeps conduction loss low at typical 20-40 A operating currents. In the boost converter role, the MOSFET switches at 30-100 kHz - far above IGBT practical limits - allowing smaller boost inductors and higher power density. Because SiC switching edges are fast, EMI filter volume can also shrink when dv/dt is managed with an appropriate gate resistor. The net effect is inverter efficiency above 98-99% at the power stage level, directly improving energy yield over the plant lifetime.
Empfohlen
EV On-Board Charger (OBC)
In EV on-board chargers, the NTHL040N120SC1 serves in the PFC stage and the CLLC or LLC DC-DC transformer stage, where its low gate charge from the compact SiC die reduces switching loss at the 100-500 kHz frequencies these topologies demand. The 1200 V rating handles universal three-phase AC input rectified buses and high-voltage 800 V battery architectures. Its 60 A (Tc) current capability supports 7-22 kW OBC power levels with parallel pairing. Avalanche ruggedness of 613 mJ provides robustness against transformer leakage-inductance spikes. Fast SiC switching also shrinks transformer and capacitor size, critical for meeting OBC weight and volume targets.
Empfohlen
DC Fast Charging Infrastructure
DC fast charger power modules benefit directly from the NTHL040N120SC1's parameter set: 1200 V blocking for the high-side switch on 800 V bus architectures, 40 mΩ conduction resistance limiting module heat at sustained 30-60 A output currents, and high-frequency SiC switching enabling high-power-density LLC converter stages. With 348 W dissipation capability at Tc and 613 mJ avalanche energy, the device tolerates the transient stresses inherent in grid-tied conversion. Parallel operation of two or more devices scales module power to 30-150 kW; matched VGS(th) selection from reel data minimizes current sharing imbalance in paralleled layouts.
Empfohlen
Three-Phase Industrial Motor Drives
Industrial variable-frequency drives gain from replacing IGBTs with the NTHL040N120SC1: switching at 20-50 kHz versus the 4-16 kHz typical of silicon IGBT drives reduces motor current ripple, audible noise, and torque ripple, while cutting switching loss substantially. The 1200 V class matches 400-690 V AC line architectures with appropriate headroom for transients. The 613 mJ avalanche rating guards against DC-link overshoot events. Lower losses reduce heatsink size, enabling more compact drive cabinets. Designers should apply gate resistors to moderate dv/dt on long motor cable runs, balancing EMI against switching efficiency in this application.
Empfohlen
Server and Telecom Power Supplies
High-efficiency server and telecom rectifiers use the NTHL040N120SC1 in bridgeless totem-pole PFC front ends, a topology only practical with wide-bandgap devices because the high-side switch operates at hard-switching conditions - SiC's near-zero reverse recovery makes this viable where silicon superjunction MOSFETs fail thermally. The 40 mΩ on-resistance keeps conduction loss acceptable at several-kilowatt levels, and the low output charge supports 65-140 kHz operation. Resulting power supplies achieve 96-97% efficiency, meeting 80 PLUS Titanium class targets while reducing cooling demand and data center operating cost.
Empfohlen
Energy Storage System (ESS) Converters
Battery energy storage bidirectional DC-DC converters exploit the NTHL040N120SC1's combination of low RDS(on) and fast switching in dual-active-bridge (DAB) stages linking 400-800 V battery stacks to DC bus. The 1200 V rating withstands battery-side transient excursions, and the 613 mJ avalanche capability adds robustness during fault transients. Bidirectional power flow demands symmetric loss performance, which the SiC MOSFET's lack of body-diard reverse-recovery penalty provides. Operating at 50-100 kHz permits high-power-density magnetics, important for rack-mounted ESS cabinets where volume per kilowatt is a key commercial metric.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für NTHL040N120SC1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | NTHL020N120SC1 | NTHL015N120SC1 | NTHL080N120SC1 | NVHL072N120SC1 |
|---|---|---|---|---|---|
| Package | TO-247-3L | TO-247-3L - same | TO-247-3L - same | TO-247-3L - same | TO-247-3L - same |
| Brand | onsemi | onsemi | onsemi | onsemi | onsemi |
| VDS | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V |
| RDS(on) Max | 40 mΩ | 20 mΩ | 15 mΩ | 80 mΩ | 72 mΩ |
| Technology Platform | EliteSiC M1 | EliteSiC M1 | EliteSiC M1 | EliteSiC M1 | EliteSiC |
| Relative Cost | Medium | Higher | Highest | Lower | Lower |
| Pinout (1/2/3) | Gate / Drain / Source | Gate / Drain / Source - same | Gate / Drain / Source - same | Gate / Drain / Source - same | Gate / Drain / Source - same |
Wichtigste Unterscheidungsmerkmale
- Balanced conduction/switching loss at mid-range cost (vs. NTHL015N120SC1)
- Lower conduction loss than cost-optimized sibling (vs. NTHL080N120SC1)
- Avalanche ruggedness (vs. NTHL080N120SC1)
Designhinweise
The NTHL040N120SC1 is rated 348 W at Tc = 25C, which assumes a near-ideal case-to-heatsink interface. Use a high-conductivity thermal interface material, torque the TO-247 mounting screw to the datasheet specification, and compute Tj as Ta + P x (RthJC + RthCH + RthHA) using the datasheet thermal resistance values. Estimated: at 1200 V bus, 20 A, and 40 mΩ, conduction loss alone is P = I2 x R = 16 W, so total loss including switching must be budgeted before heatsink selection.
SiC switching speeds in the EliteSiC M1 platform create high dv/dt and di/dt. Minimize power loop inductance by keeping the DC-link capacitor close to drain and source pins, and use a low-inductance gate drive loop with a dedicated gate return path to the source pin. Add a small anti-parasitic gate-source resistor (1-2 kΩ) to prevent floating-gate turn-on, and select the gate resistor value to trade switching loss against EMI per the onsemi gate drive application notes.
Do not substitute this 3-lead TO-247-3L part with the 4-lead Kelvin-source NTH4L040N120SC1 without PCB rework - the pinouts differ. In bridge topologies, apply a modest negative gate bias or Miller clamp to prevent dv/dt-induced false turn-on. Verify avalanche conditions against the 613 mJ rating (Tj = 25C, L = 1 mH, IAS = 35 A reference) and derate avalanche energy at elevated junction temperature.
Compliance-Informationen
RoHS compliance per onsemi product documentation; TO-247-3L through-hole package supplied lead-free. REACH, halogen-free, and conflict-minerals declarations available via onsemi compliance portal.
