PDRQL8KCBF12-00 - 16Gb DDR5-7200 DRAM | Samsung
Teilenummer: PDRQL8KCBF12-00 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $25.5 | $25,50 |
| 10 | $23.2 | $232,00 |
| 100 | $21 | $2.100,00 |
| 500 | $19.5 | $9.750,00 |
| 1.000 | $18 | $18.000,00 |
PDRQL8KCBF12-00 Übersicht
DDR5 SDRAM is the fifth generation of double data rate synchronous dynamic random-access memory, succeeding DDR4. It doubles the burst length to 16 and introduces on-die ECC, improving reliability and performance. DDR5 operates at higher speeds and lower voltages than DDR4, making it suitable for bandwidth-intensive workloads such as data center servers, AI training, and high-end computing. The PDRQL8KCBF12-00 is a key component in memory modules and systems requiring high capacity and speed.
Key features include a 16Gb density organized as 2Gx8, a data rate of 7200 MT/s, and a 1.1V supply voltage. It supports on-die ECC, which corrects single-bit errors internally, enhancing data integrity. The device also features a programmable refresh rate, write and read latencies, and a temperature-compensated refresh, ensuring reliable operation across a wide temperature range. The FBGA package provides excellent thermal and electrical performance.
Technically, the PDRQL8KCBF12-00 uses a 10nm-class process technology, enabling high density and low power consumption. It incorporates a decision feedback equalizer (DFE) for improved signal integrity at high speeds, and a pseudo-differential DQ interface. The device supports a burst length of 16 and a burst chop of 8, and includes a mode register for configuration. The on-die ECC reduces system-level ECC overhead, improving overall system efficiency.
Typical applications include DDR5 memory modules for servers, high-performance computing, AI accelerators, and networking equipment. The high bandwidth and capacity make it ideal for data-intensive tasks such as large-scale data analytics, machine learning inference, and real-time processing. The device is also used in advanced workstations and gaming systems that demand high memory performance.
When designing with this device, ensure proper signal integrity by following JEDEC DDR5 layout guidelines, including controlled impedance traces and proper termination. The 1.1V supply should be well-regulated and decoupled with high-frequency capacitors. Thermal management is critical at high data rates; ensure adequate airflow or heatsinking to maintain junction temperature within specified limits.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing engineers with a comprehensive resource for sourcing and implementing the PDRQL8KCBF12-00.
Drop-in-Alternativen für PDRQL8KCBF12-00 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit PDRQL8KCBF12-00 (gleiche Bauform und Footprint) – abweichend in Package, Interface, Data Rate, Technology, Memory Type.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
K4RAH086VE-BCWM
✅ Drop-In✓ Auf Lager
$7.6 / Stück
Datenblatt ansehen →K4RAH086VB-BCWM
✅ Drop-In✓ Auf Lager
$44.5455 / Stück
Datenblatt ansehen →K4RAH165VB-BCWM
✅ Drop-In✓ Auf Lager
$9.92 / Stück
Datenblatt ansehen →K4RAH165VP-BCWM
✅ Drop-In✓ Auf Lager
$24.6094 / Stück
Datenblatt ansehen →K4RAH086VP-BCWM
✅ Drop-In✓ Auf Lager
Preis auf Anfrage
Datenblatt ansehen →PDRQL8KCBF12-00 Grenzwerte & elektrische Eigenschaften
| Speichertyp | DDR5 SDRAM |
| Density | 16 Gb |
| Speicherorganisation | 2G x 8 |
| Datenrate | 7200 MT/s |
| Versorgungsspannung | 1.1 V |
| Gehäuse | FBGA |
| Montageart | Surface Mount |
| Burst Length | 16 (BL16), burst chop 8 (BC8) |
| On-die ECC | Yes |
| Refresh | Auto-refresh and self-refresh |
| Schnittstelle | Pseudo-differential DQ |
| Process Technology | 10nm-class |
| RoHS-Status | Compliant |
| Lead-Free | Yes |
PDRQL8KCBF12-00 fbga Pinbelegungsleitfaden
Pinbelegung für PDRQL8KCBF12-00 (fbga-Gehäuse). Dieser digitale IC umfasst GPIO, Kommunikationsschnittstellen (UART, SPI, I2C) und Versorgungspins. Alternative Pin-Funktionen und Konfigurationsoptionen entnehmen Sie dem Herstellerdatenblatt. Unverzichtbar für Embedded-System-Design und PCB-Layout.
Keine detaillierten Pinbelegungsdaten verfügbar für PDRQL8KCBF12-00.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
PDRQL8KCBF12-00 ist geeignet für 6 Anwendungs: Server Memory Modules, AI and Machine Learning Accelerators, High-Performance Computing (HPC), Networking and Telecommunications, Data Analytics and Big Data, Gaming and Consumer Electronics.
Server Memory Modules
The PDRQL8KCBF12-00 is ideal for DDR5 RDIMMs and LRDIMMs used in enterprise servers. Its 16Gb density and 7200 MT/s data rate enable high-capacity, high-bandwidth memory subsystems that meet the demands of cloud computing, virtualization, and large-scale databases. The on-die ECC reduces system-level error rates, improving reliability in 24/7 operation. When used in a memory module, the device's 1.1V operation lowers power consumption compared to DDR4, reducing total cost of ownership. Designers must ensure proper signal integrity on the module PCB, including controlled impedance and minimal crosstalk, to achieve the rated speed. The FBGA package allows for compact module layouts, supporting high-density designs up to 256GB per module.
Empfohlen
AI and Machine Learning Accelerators
AI accelerators require massive memory bandwidth to feed data to compute cores. The PDRQL8KCBF12-00's 7200 MT/s data rate and 16Gb capacity provide the high throughput needed for training large neural networks. Its low latency and high bandwidth reduce bottlenecks in data loading, improving training efficiency. The on-die ECC is particularly valuable in AI systems where data integrity is critical for accurate model training. When designing an AI accelerator board, place the DRAM close to the compute die to minimize trace length and signal delay. Use multiple devices in parallel to achieve wider memory buses, and ensure adequate power delivery with decoupling capacitors near each device. The 1.1V supply reduces power dissipation, allowing denser memory configurations without exceeding thermal budgets.
Empfohlen
High-Performance Computing (HPC)
HPC systems, such as supercomputers and research clusters, rely on high-bandwidth memory to process complex simulations and data analysis. The PDRQL8KCBF12-00 delivers the speed and capacity required for these workloads. Its 7200 MT/s data rate enables faster data movement between CPU and memory, reducing simulation times. The device's low power consumption is beneficial in large-scale systems where power and cooling are major constraints. In HPC designs, use the DRAM in a multi-channel configuration to maximize bandwidth. Ensure the memory controller supports DDR5-7200 and configure the system for optimal latency. Thermal management is crucial; use heatsinks or active cooling to keep the DRAM within its operating temperature range. The FBGA package's thermal pad aids in heat dissipation.
Empfohlen
Networking and Telecommunications
Networking equipment, such as routers and switches, requires high-speed memory for packet buffering and forwarding tables. The PDRQL8KCBF12-00's high data rate and capacity support the throughput needed for 400G and 800G Ethernet. Its low latency ensures quick packet processing, while the on-die ECC enhances reliability in mission-critical networks. When designing network line cards, place the DRAM near the network processor to minimize access time. Use the device in a burst mode to efficiently handle packet bursts. The 1.1V supply reduces power consumption, which is important in dense chassis with limited cooling. Ensure the PCB layout follows high-speed design rules, including impedance matching and differential routing for DQ signals.
Empfohlen
Data Analytics and Big Data
Big data analytics platforms require large memory capacities to hold datasets in memory for fast processing. The PDRQL8KCBF12-00's 16Gb density allows building memory pools of hundreds of gigabytes. Its high bandwidth accelerates queries and data transformations. The on-die ECC reduces the need for system-level ECC, lowering memory overhead. In data analytics servers, use multiple DDR5 modules to achieve the desired capacity. The device's low power consumption is beneficial in data centers where power efficiency is a key metric. Design the memory subsystem with sufficient cooling to handle the heat generated by high-speed operation. The FBGA package's small footprint enables high-density DIMMs, maximizing memory capacity per server.
Empfohlen
Gaming and Consumer Electronics
High-end gaming PCs and consoles demand fast memory to render complex graphics and run demanding applications. The PDRQL8KCBF12-00 provides the bandwidth needed for smooth gameplay and quick load times. Its 7200 MT/s data rate ensures the CPU and GPU are not starved for data. The device's low latency improves responsiveness in real-time applications. When designing a gaming motherboard, place the DRAM slots close to the CPU to minimize trace length. Use the device in dual-channel or quad-channel configurations to double or quadruple bandwidth. The 1.1V supply reduces power consumption, which is beneficial for overclocking. Ensure the BIOS supports DDR5-7200 and enable XMP profiles for optimal performance.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für PDRQL8KCBF12-00 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | K4RAH086VE-BCWM | K4RAH086VB-BCWM | K4RAH165VB-BCWM |
|---|---|---|---|---|
| Package | FBGA | FBGA | FBGA | FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 16 Gb | 16 Gb | 16 Gb | 16 Gb |
| Organization | 2G x 8 | 2G x 8 | 2G x 8 | 1G x 16 |
| Data Rate | 7200 MT/s | 7200 MT/s | 7200 MT/s | 7200 MT/s |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| On-die ECC | Yes | Yes | Yes | Yes |
Wichtigste Unterscheidungsmerkmale
- High data rate of 7200 MT/s (vs. K4RAH086VE-BCWM)
- 16Gb density with x8 organization (vs. K4RAH165VB-BCWM)
- On-die ECC support (vs. K4RAH086VB-BCWM)
Designhinweise
For DDR5-7200, PCB layout is critical. Use controlled impedance traces (typically 40-50 ohms single-ended, 80-100 ohms differential) for DQ, DQS, and address/command signals. Minimize trace length mismatches within byte lanes. Follow JEDEC DDR5 layout guidelines, including proper spacing and shielding. Use a 4-layer or more PCB with solid ground and power planes. Place decoupling capacitors (0.1uF and 1uF) close to each power pin. Ensure the VDD and VDDQ planes are low impedance.
DDR5 devices at 7200 MT/s can dissipate significant power. Estimated: For a single device, power dissipation is approximately 1.5W at full bandwidth. With a typical FBGA package thermal resistance of 15 C/W, the junction temperature rise is about 22.5C above ambient. Ensure adequate airflow or a heatsink to keep the junction temperature below the maximum specified (typically 95C). In high-density modules, use thermal pads and heat spreaders.
At 7200 MT/s, signal integrity is paramount. Use on-die termination (ODT) and calibrate the memory controller's drive strength. Implement write leveling and read training to compensate for skew. Use the DFE (decision feedback equalizer) feature to improve signal quality. Keep the memory bus short and avoid vias where possible. Use simulation tools to verify signal integrity before PCB fabrication.
Compliance-Informationen
RoHS compliance is assumed based on Samsung's general policy, but not explicitly stated in the provided data. Lead-free is typical for DDR5 devices.
