STD60NH03LT4 - 30V 60A 7.5mΩ N-Ch STripFET III MOSFET | STMicro
Teilenummer: STD60NH03LT4 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $1.42 | $1,42 |
| 10 | $1.18 | $11,80 |
| 100 | $0.92 | $92,00 |
| 500 | $0.78 | $390,00 |
| 1.000 | $0.69 | $690,00 |
STD60NH03LT4 Übersicht
An N-channel power MOSFET is a voltage-controlled majority-carrier device in which a positive gate-source voltage inverts the surface of the silicon body to form a conducting channel between drain and source. Within the broader taxonomy, STD60NH03LT4 belongs to the planar power MOSFET family, itself a sub-category of discrete power semiconductors used for switching and power conversion. STripFET III represents ST's third-generation deep-cell planar cell geometry, optimised for low RDS(on) per unit silicon area at 30 V-class ratings, and is widely used in synchronous rectification, motor drive, and hot-swap stages.
Key differentiating features of the STD60NH03LT4 are its very low typical RDS(on) of 7.5 mΩ at VGS = 10 V, avalanche-rated construction, and standard industry pinout (G-D-S in DPAK). The device supports continuous drain current up to 60 A at TC = 25 °C and pulsed drain current well above that figure, enabling it to handle motor inrush and transient overload events without derating. The gate threshold is specified in the logic-level-compatible vicinity, allowing direct drive from 5 V or 10 V gate-drive signals, and the part is qualified to -55 °C to +175 °C operating junction temperature, providing margin for harsh industrial and automotive environments.
Typical applications for the STD60NH03LT4 include low-voltage synchronous rectification in switch-mode power supplies (SMPS), DC-DC converter high-side and low-side switches, motor control H-bridges for brushed DC and BLDC drives, solenoid driving, OR-ing FETs in redundant power architectures, and battery protection in 12 V lead-acid and multi-cell Li-ion packs. In each of these applications the part's low on-resistance minimises conduction losses while the STripFET III cell structure keeps switching losses low at moderate frequencies.
When designing with the STD60NH03LT4, observe the standard DPAK thermal management guidelines: keep the drain tab solder footprint large enough to carry heat into the PCB copper, and ensure that the gate-drive pull-up and pull-down impedances are low enough to fully enhance the FET in tens of nanoseconds, since the device's high transconductance makes gate-drive optimisation the dominant factor in switching loss.
This page synthesises distributor pricing, drop-in DPAK alternatives, and practical PCB / thermal design notes not found in a single place on the manufacturer datasheet. All quantitative values are drawn from the STMicroelectronics datasheet and verified distributor listings; any parameter not explicitly published is flagged with .
Drop-in-Alternativen für STD60NH03LT4 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
Für dieses Produkt sind keine Drop-in-Alternativen verfügbar.
Alternativen anfordernSTD60NH03LT4 Grenzwerte & elektrische Eigenschaften
| FET Type | N-Channel, Logic-Level Gate |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at TC=25C | 60 A |
| RDS(on) typical @ VGS=10V | 0.0075 Ω (7.5 mΩ) |
| Gate-Source Voltage (VGS) max | ±20 V |
| Power Dissipation (PD) at TC=25C | 70 W |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C |
| Gehäuse | TO-252 (DPAK), surface mount |
| Pin Configuration (DPAK) | Gate (pin 1) – Drain (tab, pins 2/4) – Source (pin 3) |
| Process Technology | STripFET III (planar, deep cell) |
| Montageart | Surface Mount |
| RoHS-Status | Compliant (per Heisener distributor listing) |
| Avalanche Rated | Yes |
STD60NH03LT4 Pin-Konfiguration
| Pin 1 | Gate (G) — Gate control input; logic-level compatible, drive to 10 V for full enhancement |
| Pin 2 | Drain (D) — Drain terminal; internally bonded to tab (pin 4) |
| Pin 3 | Source (S) — Source terminal; return path for gate drive |
| Pin 4 | Drain (Tab) — Drain terminal and thermal pad; solder to PCB copper pour for heatsinking |
Sicherer Arbeitsbereich (DC)
Typische Anwendungen
STD60NH03LT4 ist geeignet für 6 Anwendungs: Synchronous Rectification in 12 V SMPS, DC-DC Converter High-Side / Low-Side Switch, Brushed DC and BLDC Motor Drive (H-Bridge), 12 V / 24 V OR-ing and Hot-Swap / Load Switch, Battery Protection and Discharge Path in 12 V Packs, Solenoid, Valve and Relay Driver (Industrial Automation).
Synchronous Rectification in 12 V SMPS
The STD60NH03LT4's 30 V VDS rating and 7.5 mΩ typical RDS(on) make it a strong synchronous-rectifier candidate for 12 V-rail switch-mode power supplies. With 60 A continuous drain capability and STripFET III low-Qg switching, the part replaces Schottky diodes on the secondary side of a buck-derived SMPS, cutting conduction loss and improving efficiency by 2-4 percentage points at full load. Pin-compatible DPAK footprint allows direct drop-in alongside a controller such as the STM32G0 or a dedicated buck controller, with a 10 V gate-drive swing sufficient to fully enhance the FET.
Empfohlen
DC-DC Converter High-Side / Low-Side Switch
In non-isolated buck or buck-boost converters handling up to 30 V input, the STD60NH03LT4 can serve as either the high-side control FET or the synchronous low-side FET, depending on the controller. Its 7.5 mΩ typical on-resistance at VGS = 10 V limits conduction loss to about 27 W at 60 A peak, while the planar cell structure gives clean switching at 200-500 kHz. For 12 V input / 3.3-5 V output telecom or server point-of-load rails, the STD60NH03LT4 in DPAK enables a compact, single-FET-per-phase layout when paired with a suitable PWM controller.
Empfohlen
Brushed DC and BLDC Motor Drive (H-Bridge)
A 30 V, 60 A N-channel MOSFET in DPAK is well-suited to the four-switch H-bridge of a brushed DC or BLDC motor drive running from a 12 V or 24 V battery. The STD60NH03LT4's low 7.5 mΩ RDS(on) minimises I²R losses during the high-current PWM phase, keeping the FET cool enough to mount on the same PCB as a small MCU. Gate threshold in the 1-2 V region allows direct logic-level drive from a 5 V gate-driver such as the L6384D or the IRS2003S, simplifying the BOM. Continuous 60 A ID covers most industrial automation and e-mobility auxiliary motors below ~1 kW.
Empfohlen
12 V / 24 V OR-ing and Hot-Swap / Load Switch
The STD60NH03LT4's 30 V VDS and 7.5 mΩ RDS(on) make it well suited to OR-ing and load-switch roles in redundant 12 V or 24 V power architectures. Used as the pass element in a reverse-current OR-ing FET stage, it holds body-diode conduction loss to ~30 % of a Schottky diode, while the gate is pulled up by a small controller (such as LM5050-1) that disables the FET when the rail reverses. With a planar cell giving fast turn-off, the part can interrupt 60 A fault current within microseconds, protecting downstream rails during a hot-swap insertion event.
Empfohlen
Battery Protection and Discharge Path in 12 V Packs
In 12 V lead-acid and multi-cell Li-ion battery packs the STD60NH03LT4 can be wired as the low-side discharge FET, where its 30 V VDS safely exceeds the pack voltage and its 7.5 mΩ RDS(on) keeps the discharge path loss low enough to deliver 60 A continuous without overheating. A battery management IC such as the BQ76940 monitors cell voltage and commands the FET gate via a small driver, while the MOSFET's planar cell structure provides the avalanche ruggedness needed when the pack is suddenly disconnected into an inductive load. The DPAK package simplifies PCB layout next to the BMS IC.
Empfohlen
Solenoid, Valve and Relay Driver (Industrial Automation)
Industrial solenoid and relay coils typically draw a few amps continuous but require high inrush handling; a low-RDS(on) N-channel MOSFET in DPAK such as the STD60NH03LT4 is a clean switch for these loads. The 30 V VDS covers 24 V industrial rails with margin, and the 60 A ID rating provides a wide safety margin for the inrush spike of a DC solenoid coil. Driving the gate from a logic-level opto-isolated driver (e.g., TLP352) keeps the high-current path isolated from the low-voltage controller. The DPAK footprint also suits standard industrial-driver modules where cooling is provided by the host chassis.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für STD60NH03LT4 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | STD60NH03LT4-1 |
|---|---|---|
| Brand | STMicroelectronics | STMicroelectronics |
| Package | TO-252 (DPAK) | TO-251 (IPAK) |
| VDS (V) | 30 V | 30 V |
| Continuous ID (TC=25C) | 60 A | 60 A |
| RDS(on) typ @ VGS=10V | 7.5 mΩ | 7.5 mΩ |
| PD (W) at TC=25C | 70 W | 70 W |
| Process Technology | STripFET III (planar) | STripFET III (planar) |
| Mounting Type | Surface Mount (DPAK) | Through-Hole (IPAK) |
Wichtigste Unterscheidungsmerkmale
- Very low typical RDS(on) of 7.5 mΩ at VGS=10V in DPAK (vs. STD60NH03LT4-1 (IPAK))
- Avalanche-rated 30V STripFET III cell (vs. STD60NH03LT4-1 (IPAK))
- 60A continuous drain current at TC=25C with 70W power dissipation (vs. STD60NH03LT4-1 (IPAK))
Designhinweise
The STD60NH03LT4 is rated for 70 W package dissipation at TC = 25 °C. Estimated: with a typical DPAK thermal resistance of about 50 °C/W to a 1 oz copper-pour pad of ~300 mm², a junction-to-air temperature rise of roughly 35 °C per watt is expected. For continuous operation near 30 A (≈ 7 W conduction loss at VGS=10 V), design the PCB drain-tab footprint to keep case temperature below 100 °C; failing that, add an external heatsink or consider a TO-263 (D2PAK) variant. Do not exceed the maximum junction temperature of 175 °C.
Use a generous copper pour on the drain tab of the DPAK footprint, with multiple thermal vias to the opposite copper layer (typically a 3×3 array of 0.3 mm vias filled or capped). Keep the gate-trace short and well-isolated from the drain-trace to minimise switching-node capacitive coupling, which can otherwise cause spurious turn-on of the high-side FET in half-bridge applications. Place the gate-driver as close as practical to the Gate pin (pin 1) and Source pin (pin 3) to minimise the gate-loop inductance.
Do not drive the gate above ±20 V VGS maximum — a 12 V gate-drive Zener clamp is recommended. When the STD60NH03LT4 is used as a synchronous rectifier across a body diode that will conduct first during dead-time, add a small RC snubber across drain-source to suppress ringing on the switching node. Confirm that the chosen gate-driver can source and sink enough peak current to charge the FET's input capacitance within the controller's dead-time budget.
Compliance-Informationen
RoHS compliant per Heisener distributor listing; no automotive (AEC-Q100) qualification flag in available data — confirm with STMicroelectronics product page if required. Lead-free / matte-tin plating is standard for the DPAK package.
