CI de memoria
Subcategorías
Productos (875)
W634GU6RB11J - 4Gb DDR3L SDRAM x16 933MHz | Winbond
The Winbond W634GU6RB11J is a 4Gbit DDR3L SDRAM organized as 256M x 16, operating at a clock frequency of 933 MHz (DDR3L-1866) with a data rate of 1866 MT/s. It is housed in a 96-ball VFBGA package (7.5x13 mm) and operates from a 1.35V supply, making it suitable for low-power applications. The device supports parallel interface with a burst length of 8 and features a 20 ns CAS latency. DDR3L (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory (SDRAM) that operates at 1.35V, reducing power consumption by about 20% compared to standard DDR3 (1.5V). It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is commonly used in mobile devices, embedded systems, and industrial applications where power efficiency is critical. Key features include auto self-refresh, auto precharge, data mask, write leveling, ZQ calibration, asynchronous reset, and dynamic on-chip termination (DTC). These features enhance signal integrity and simplify system design. The device supports industrial temperature range from -40°C to +95°C, making it suitable for harsh environments. It is RoHS compliant and halogen-free, aligning with environmental standards. Technically, the W634GU6RB11J uses a 96-ball VFBGA package with a 0.8mm ball pitch, providing excellent thermal and electrical performance. The memory array is organized in 8 banks, and the device supports programmable CAS latency (CL) and additive latency (AL) for flexible timing. The on-die termination (ODT) feature improves signal quality by matching impedance, reducing reflections on the data bus. Typical applications include networking equipment, industrial automation, medical devices, and embedded computing systems where high-density, low-power memory is required. The 4Gb density and x16 organization make it ideal for applications needing moderate memory capacity with a wide data bus. When designing with this device, ensure proper decoupling capacitors near the VDD and VDDQ pins to minimize power supply noise. Also, follow the JEDEC DDR3L layout guidelines for signal integrity, including controlled impedance traces and proper termination.
W634GU6RB12I - 4Gb DDR3L SDRAM x16 800MHz | Winbond
The W634GU6RB12I is a 4Gbit DDR3L SDRAM organized as 256M x 16, operating at 1.35V with a data rate of 800MHz (DDR3L-1600). It is housed in a 96-ball VFBGA (7.5x13mm) package and is designed for industrial temperature range (-40°C to +95°C). This memory IC is ideal for applications requiring high-density, low-power volatile storage. DDR3L (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory (SDRAM) that operates at 1.35V, reducing power consumption by about 20% compared to standard DDR3 (1.5V). It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is commonly used in computing, networking, and embedded systems where power efficiency is critical. Key features include a parallel interface with 800MHz clock speed, 20ns row cycle time, and support for industrial temperature grades. The device is RoHS compliant and halogen-free, meeting environmental standards. The 96-ball VFBGA package offers a compact footprint suitable for space-constrained designs. The W634GU6RB12I utilizes advanced DRAM process technology, providing reliable performance with low power consumption. It supports standard DDR3L features such as on-die termination (ODT), programmable CAS latency, and burst lengths of 8. The industrial temperature grade ensures operation in harsh environments. Typical applications include industrial automation, networking equipment, embedded computing, and automotive infotainment systems. Its high density and low power make it suitable for memory-intensive tasks in these domains. When designing with this device, ensure proper decoupling and signal integrity practices are followed, as high-speed memory interfaces require careful PCB layout to minimize noise and reflections.
W634GU6RB12J - 4Gb DDR3L SDRAM 933MHz | Winbond
The W634GU6RB12J is a 4Gbit DDR3L SDRAM from Winbond Electronics, organized as 256M x 16 and operating at 1.35V. It features a parallel interface with a clock speed of 933 MHz (DDR3L-1866) and a CAS latency of 20 ns. The device is housed in a 96-ball VFBGA package (7.5x13 mm) and is designed for high-bandwidth memory applications. DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high data rates. It is part of the DDR3L memory family, which is widely used in computing, networking, and industrial applications where power efficiency is critical. Key features include a 4Gbit density, x16 organization, 933 MHz clock speed, and support for the DDR3L-1866 specification. The device offers a burst length of 8 and supports on-die termination (ODT) for improved signal integrity. It operates over a temperature range of -40°C to +105°C (TCASE) for the 12J industrial plus grade, making it suitable for harsh environments. The W634GU6RB12J utilizes advanced DRAM process technology to achieve high speed and low power. It includes features such as programmable CAS latency, write leveling, and self-refresh modes to optimize performance and power consumption. The 96-ball VFBGA package provides excellent thermal and electrical performance. Typical applications include embedded systems, networking equipment, industrial automation, and automotive infotainment. The low voltage and high speed make it ideal for power-sensitive designs that require high memory bandwidth. When designing with this device, ensure proper decoupling and signal integrity practices are followed. The DDR3L interface requires careful PCB layout to minimize crosstalk and maintain signal quality at high speeds.
W9425G6JH-5 - 256Mbit DDR400 SDRAM, 16Mx16, 2.5V TSOP-II | Winbond
The Winbond W9425G6JH-5 is a 256 Mbit DDR SDRAM organized as 4M x 4 banks x 16 bits, housed in a 66-pin TSOP-II surface-mount package and rated for DDR400/CL3 operation at 2.5V. The -5 speed grade delivers a peak data bandwidth of up to 400 Mwords per second under the JEDEC DDR-I specification, making it suitable for legacy embedded graphics, networking line cards, set-top boxes, and industrial controllers that required double-data-rate throughput in the mid-2000s. The device is fabricated in a CMOS process and includes on-chip refresh, burst counter, and self-refresh support. A DDR SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) is a type of volatile memory that transfers data on both the rising and falling edges of the clock, effectively doubling the peak throughput of a single-data-rate SDRAM of the same bus frequency. DDR-I sits at the base of the DDR family hierarchy (DDR -> DDR SDRAM -> volatile memory -> DRAM -> semiconductor memory) and was standardized by JEDEC as the JESD79 specification family. Compared to its predecessor SDR SDRAM, DDR-I uses a 2n-prefetch architecture, SSTL-2 I/O, and requires a 2.5V supply for VDD plus a 2.5V supply for VDDQ. Key specifications of the W9425G6JH-5 include 4,194,304 words per bank across 4 banks, a 16-bit data bus width, a CAS Latency (CL) of 3 at DDR400, a 66-pin TSOP-II mechanical outline measuring 0.400 inch wide, and the -5I industrial temperature grade option that supports -40C to +85C. The chip operates from a single 2.5V VDD supply with a separate VDDQ rail terminated to VTT for the SSTL-2 interface. Internally, the device uses a 4-bank architecture with dual-bank operation and supports burst lengths of 2, 4, 8, and full page. The W9425G6JH-5 is constructed with a prefetch I/O scheme synchronized to the internal SDRAM clock, achieving DDR400 compliance when paired with a host controller that drives the SSTL-2 signaling at 200 MHz with 3n CBR. The 4-bank architecture allows interleaved operations across banks while one bank is being precharged, improving effective bandwidth in streaming workloads. Self-refresh mode permits low-power standby retention, making the device suitable for battery-backed or low-duty-cycle embedded systems. Typical applications for the W9425G6JH-5 include DDR1 main memory in industrial PCs, networking switches, digital video recorders, and printer controllers. The wide 16-bit bus simplifies interface to ASICs and low-cost processors without requiring multiple narrow-DRAM chips. Designers choose this Winbond part where Micron, Samsung, and Nanya equivalents are also qualified in 2018. When designing with the W9425G6JH-5, place VTT termination resistors within 1 inch of the DQ/DQS pins and follow JEDEC DDR-I routing guidelines. Decouple VDDQ with 0.1uF and 10uF capacitors near each pin and route DQS in matched-length pairs with the byte lane. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers an actionable single reference for sourcing and design-in of the W9425G6JH-5.
W948D6FBHX5I - 256Mb LPDDR SDRAM 200MHz | Winbond
The Winbond Electronics W948D6FBHX5I is a 256 Mbit Mobile Low-Power DDR (LPDDR / mobile DDR) SDRAM memory IC organized as 4M words x 4 banks x 16 bits, operating at up to 200 MHz with a 5 ns clock cycle, supplied in a 60-ball VFBGA (8x9 mm, 0.80 mm ball pitch) package. LPDDR SDRAM is a volatile DRAM variant optimized for battery-powered and thermally constrained systems. Unlike standard DDR DRAM, mobile LPDDR uses a 1.8 V core supply, deeper power-down modes, a temperature-compensated self-refresh (TCSR) feature, and partial-array self-refresh (PASR) to cut standby current. In the memory hierarchy it sits between SRAM and standard DDR SDRAM, forming the main-memory tier of embedded SoC platforms. Key features of the W948D6FBHX5I include the x16 parallel data interface, which reduces bus width and pin count versus x32 parts, a 200 MHz clock rate supporting LPDDR-200 throughput of 400 MB/s per pin pair, and the industrial temperature variant denoted by the I suffix in the ordering code. The VFBGA ball-grid package minimizes board area at 72 mm2 and improves signal integrity through short, controlled-impedance ball interconnects. Internally the device uses four independent banks with a burst length of 2, 4, or 8, allowing efficient random and sequential access. Power management modes include deep power-down, self-refresh, and power-down, with typical operating current in the tens of milliamp range and standby current in the microamp range when self-refresh is enabled. Typical applications include industrial HMI and gateways, portable medical instruments, telematics and tracking devices, and embedded Linux/RTOS systems where an application processor requires 32 MB of low-power main memory. When designing with this part, match the controller timing registers to the 5 ns cycle time and route the address/control bus as a matched-length fly-by or point-to-point group within the 1.8 V SSTL-18-style I/O regime; series termination is usually unnecessary at this speed for short traces. This page consolidates distributor availability, pricing tiers, drop-in same-family alternatives, and practical design notes not found in the manufacturer datasheet.
W949D2DBJX5I - 512Mb LPDDR SDRAM 200MHz x32 | Winbond
The Winbond Electronics W949D2DBJX5I is a 512Mbit Low Power DDR (LPDDR / Mobile DDR) SDRAM memory IC with a x32 data interface, 200 MHz clock rate (5 ns clock cycle), fabricated on a 46nm DRAM process and housed in a 90-ball VFBGA (8x13 mm) package, qualified for the industrial temperature range. An LPDDR SDRAM is a mobile-optimized variant of double-data-rate synchronous DRAM. Like all DRAM, it stores each bit as charge on a capacitor that must be periodically refreshed, but LPDDR devices reduce core and I/O operating voltage and add low-power modes such as Deep Power Down and Self Refresh so that battery-powered systems can keep volatile memory alive with minimal energy. In the memory hierarchy, the W949D2DBJX5I sits as main system memory, positioned between embedded SRAM caches and non-volatile flash storage. Key features include 512Mbit total density organized for a x32-wide parallel bus, a 200 MHz maximum clock frequency delivering effective double-data-rate transfers on both clock edges, and the space-saving 90-VFBGA 8x13 mm ball grid array that minimizes board area and improves signal integrity for high-speed memory routing. The I temperature suffix designates industrial-grade operating temperature support, and the 46nm process keeps core current low. Technically, the device uses double data rate signaling on the DQ pins, source-synchronous data strobes (DQS) for capture, and programmable mode registers for CAS latency, burst length and burst type configuration per the LPDDR (Mobile DDR) SDRAM standard. Bank and row/column addressing follow the standard LPDDR command set with ACTIVATE, READ, WRITE, PRECHARGE, REFRESH and mode register set commands. Typical applications include portable and industrial embedded systems: main memory for ARM-based application processors, networking and communication modules, telematics and data-loggers, and human-machine interface boards where 64 MByte of low-power DRAM is sufficient. Design consideration: LPDDR shares command/address lines among devices, so careful length-matched routing and proper termination of the 1.8 V-class signaling environment are essential; verify the controller supports the selected CAS latency and burst configuration before layout. This page synthesizes distributor pricing, drop-in family alternatives, pin-level guidance and practical design notes not consolidated in the manufacturer datasheet.
W949D2DBJX5I-TR - 512Mb LPDDR SDRAM 200MHz x32 | Winbond
The Winbond Electronics W949D2DBJX5I-TR is a 512Mbit Mobile LPDDR SDRAM memory IC with a 32-bit parallel data interface, 200 MHz clock frequency, 5 ns access time, and a 90-ball VFBGA (8x13 mm) package, qualified for the -40C to +85C industrial temperature range. Mobile LPDDR SDRAM is a low-power variant of Double Data Rate synchronous DRAM optimized for battery-powered and thermally constrained systems. Within the memory hierarchy, SDRAM sits under the volatile RAM family, distinguished from asynchronous DRAM by a clocked interface and from standard DDR by reduced core voltage, lower I/O swing, and power-saving features such as deep power-down and temperature-compensated self-refresh. Key features include a 1.7 V to 1.95 V supply range (nominal 1.8 V), x32 organization at 512 Mbit density, a 200 MHz clock rate with 5 ns access time, and the compact 90-VFBGA footprint that minimizes PCB area in portable designs. The industrial temperature grade (-40C to +85C) extends usability from consumer handhelds into industrial and networking equipment. Fabricated on a 46 nm DRAM process, the device achieves a favorable balance of density, power and cost. The double-data-rate interface transfers data on both clock edges, doubling effective bandwidth relative to SDR SDRAM at the same clock. Standard LPDDR command set support (CKE-based power-down, self-refresh, mode register programming) allows straightforward controller integration with common SoCs and application processors. Typical applications include embedded industrial controllers, networking and communication equipment, telematics and navigation boxes, portable instrumentation, and battery-buffered data loggers where 64 MByte of low-power program/data memory is sufficient. Designers should observe LPDDR signal integrity requirements: length-match the differential clock to address/command traces, terminate per the datasheet guidelines, and provide a clean 1.8 V core rail with adequate decoupling at each VDD/VDDQ pin pair of the BGA array. This page synthesizes distributor pricing, family alternatives, and practical LPDDR layout guidance not consolidated in the manufacturer datasheet alone. Specifications above are drawn from verified distributor listings (DigiKey, Mouser, JLCPCB) as of 2026-09-14.
W971GG6JB-25I - 1Gb DDR2 SDRAM, 800MHz, Industrial | Winbond
The Winbond W971GG6JB-25I is a 1 Gbit DDR2 SDRAM organized as 8M words x 8 banks x 16 bits, housed in an 84-ball WBGA package (8 x 12.5 mm). The -25I speed grade supports a clock frequency of 400 MHz (DDR2-800) with data rates up to 800 Mb/s/pin, while the underlying die family extends to DDR2-1066 for higher-grade speed bins. A DDR2 SDRAM (Double Data Rate 2 Synchronous DRAM) is a volatile dynamic random-access memory that transfers data on both clock edges, doubling the effective bus rate versus DDR1. It belongs to the hierarchy SDRAM -> DRAM -> volatile memory -> semiconductor, and is widely used as main working memory in embedded systems, set-top boxes, networking equipment, automotive infotainment, and graphics subsystems. The 'I' suffix indicates the industrial temperature grade (-40 C to +85 C). Key features of the W971GG6JB-25I include 1.8 V SSTL_18 compatible I/O, on-die termination (ODT), programmable CAS latency (typically 5/6 for DDR2-800), and a 4-bit prefetch architecture. The device supports burst lengths of 4 and 8, on-die DLL for clock alignment, and selectable read/write termination strengths. The WBGA-84 package is JEDEC standard for DDR2 x16 devices, enabling drop-in compatibility with other vendors' x16 DDR2 SDRAMs of the same density and speed grade. Architecturally, the W971GG6JB uses 8 internal banks to enable concurrent row activation across banks, hiding precharge and activate latencies. The -25I bin is qualified for industrial operation and is suitable for automotive non-safety applications where AEC-Q100 is not mandated. The 'A' and 'K' suffixes in the family target full automotive AEC-Q100 qualification. Typical applications include automotive infotainment head units, industrial HMI panels, IPTV/set-top box main memory, networking line cards, and printer image buffers. It is also used in point-of-sale terminals and ruggedized industrial PCs that require a robust, JEDEC-standard DDR2 footprint. When designing with this device, follow the JEDEC DDR2 layout guidelines: maintain matched-length trace pairs for DQ/DQS, place VTT termination at the middle of the bus, and provide proper decoupling (typically 0.1 uF plus bulk) near each VDD/VSS ball. A 50 ohm impedance for SSTL_18 signaling is recommended. This page synthesizes distributor pricing, same-family DDR2 alternatives, and JEDEC-compliant layout notes not consolidated in the manufacturer datasheet.
W971GG6NB-6 - 1Gb DDR2-667 SDRAM x16 84-TFBGA | Winbond
The Winbond W971GG6NB-6 is a 1Gbit DDR2 SDRAM organized as 8M x 8 banks x 16 bits per chip, operating at a 667 Mbps data rate (DDR2-667) in a compact 84-ball TFBGA (8x12.5 mm) package. It is the -6 speed-grade variant of the W971GG6NB family and is sorted into multiple grade parts including -18, 18I, 18J, -25, 25I, 25J and -3, where the -18/18I/18J grades are compliant to the DDR2-1066 (6-6-6) specification and the -25/25I/25J grades target the DDR2-800 specification. A DDR2 SDRAM is a synchronous dynamic random-access memory that transfers data on both clock edges (double data rate) while operating from a 1.8V SSTL_18 interface. It belongs to the broader DRAM family (SDRAM -> DDR -> DDR2) and is positioned between DDR and DDR3 in the JEDEC memory hierarchy, offering higher bandwidth than DDR while consuming lower power than DDR3 thanks to the 1.8V supply rail. Key features of the W971GG6NB-6 include 8 internal banks for concurrent operations, on-chip termination (Dynamic ODT), auto precharge, data mask (DM) function for write masking, and programmable CAS latency. The chip is supplied from a single 1.8V power rail with a separate 1.8V VDDQ for the DQ bus and supports self-refresh and power-down modes for low standby power. The 84-ball TFBGA package provides a small footprint suitable for high-density designs. The W971GG6NB-6 architecture uses a double data rate interface that prefetches 4n-bit per I/O per clock cycle, doubling effective throughput without raising the core clock. Programmable impedance matching, calibrated on-die termination, and write leveling simplify board-level signal integrity at the 667 Mbps operating point, making the part straightforward to integrate on standard JEDEC-compliant DDR2 controllers. Typical applications include set-top boxes, networking equipment, LCD TVs, industrial PCs, printers, and embedded systems that need a cost-effective 1Gbit x16 DDR2 memory. The 84-ball TFBGA footprint and JEDEC-standard command set also allow it to be used as a boot RAM or working memory on SoCs that integrate DDR2 controllers. When designing with this device, follow JEDEC DDR2 PCB layout rules: maintain 50 ohm single-ended impedance on the DQ/strobe traces, route DQS and CLK with controlled length matching, and provide a clean 1.8V supply with bulk decoupling near each chip. Note that the -6 grade targets DDR2-667 timing; if your design needs higher bandwidth, consider the -18 or -25 grade parts in the same family. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving engineers a single reference for evaluating W971GG6NB-6 in cost-sensitive DDR2 designs.
W971GG6SB25I - 1Gbit DDR2 SDRAM | Winbond | 84-WBGA
The Winbond W971GG6SB25I is a 1Gbit DDR2 SDRAM organized as 8M words × 8 banks × 16 bits, housed in an 84-ball TFBGA / WBGA (8.0 × 12.5 mm) package. The “25I” speed grade corresponds to a 400 MT/s (DDR2-800) command rate with a 200 MHz clock and approximately 57.5 ns random access time. It is the industrial-temperature grade variant of the W971GG6SB family, qualified from -40 °C to +85 °C. The 1.8 V nominal VDD/V_DDQ makes it the standard JEDEC-compliant DDR2 device for embedded and consumer platforms where density, cost, and the DDR2 pinout footprint must all be satisfied. A DDR2 SDRAM is the second-generation Double Data Rate Synchronous DRAM technology standardized by JEDEC. JEDEC defined DDR2 to quadruple the minimum prefetch width from 2n to 4n (4-bit I/O per clock edge) over DDR, allowing lower clock frequencies at the same data rate, an on-die termination (ODT) scheme for signal integrity, and stricter voltage and timing budgets. Operationally, DDR2 sits between DDR1 and DDR3 in the SDRAM evolution and uses SSTL-18 I/O, a 1.8 V supply, and a separate write-termination concept. The hypernym chain for this part is therefore: DDR2 SDRAM → SDRAM → DRAM → volatile memory → memory IC → semiconductor. Key features of the W971GG6SB25I include: 1 Gbit density at 200 MHz / 400 MT/s (DDR2-800 6-6-6 timing); industrial temperature range of -40 °C to +85 °C for rugged and outdoor use; a 16-bit data bus width to maximize throughput per access; on-die termination (ODT) and a calibrated impedance matching to simplify the PCB layout; an 84-ball TFBGA / WBGA surface-mount package measuring 8 × 12.5 mm, suitable for compact notebooks, set-top boxes, and industrial boards; and synchronous pipelined architecture with auto-refresh and self-refresh capability for low-power standby. Internally, the W971GG6SB25I uses a 4-bit prefetch architecture with 8 banks. The dual-bank operation combined with the 4n prefetch lowers power consumption and signal-edge demand on the bus, while the multi-bank structure enables concurrent operations (activate one bank while reading another) for high throughput. Backward compatibility with the standard DDR2 command set is preserved, simplifying integration with CPUs, SoCs, and FPGAs that already expose a DDR2 controller. Typical applications for the W971GG6SB25I include: industrial control boards needing an operating range down to -40 °C; network routers, switches, and home gateways that need 1 Gbit on a 16-bit bus; set-top boxes, IPTV, and digital video recorders; automotive telematics and infotainment sub-systems (where a full AEC-Q100 part is not required); and embedded computing platforms built around x86, ARM, or MIPS SoCs that expose a DDR2 controller. Design considerations: a 1.8 V low-noise regulator with ±5% tolerance is required; PCB trace lengths must be matched per byte group (tolerances of ≤ 25 ps typically) and the ODT calibrated to the chosen drive strength; decoupling must use 100 nF + 1 µF + 10 µF capacitor combinations at each VDD/V_DDQ ball pair. This page synthesizes Winbond datasheet data, distributor pricing, cross-reference alternatives, and practical layout notes not found together in any single source.
W972GG6KB-25 - 2Gb DDR2-800 SDRAM x16 84-WBGA | Winbond
The Winbond W972GG6KB-25 is a 2-Gbit (128M x 16) DDR2 SDRAM organized as 134,217,728 words x 16 bits x 4 banks, supplied in an 84-ball WBGA (8x12.5 mm) package and operating from a single 1.8 V supply. The -25 speed grade corresponds to a tCK of 2.5 ns, equivalent to DDR2-800 (400 MHz data rate, 800 MT/s), with a row access time (tRAC) of 57.5 ns. It supports SSTL_18 stub-series-terminated logic, on-die termination (ODT), and auto-precharge with data-mask and dynamic-ODT features. DDR2 SDRAM (Double Data Rate 2 Synchronous DRAM) is a synchronous volatile memory class that transfers data on both clock edges and uses a 1.8 V supply to halve the power of first-generation DDR. In the wider system hierarchy it sits between DDR1 and DDR3, in the taxonomy: SDRAM -> DDR SDRAM -> DDR2 SDRAM -> DRAM -> volatile memory IC. Its JEDEC-defined features (posted CAS, OCD calibration, off-chip driver strength adjustment) make it a workhorse for embedded networking, imaging, and consumer designs that need >400 MT/s bandwidth without migrating to DDR3 footprints. Key features include four internal banks, programmable CAS Latency (3, 4, 5, 6), programmable burst length (4 or 8 with sequential or interleave modes), differential clock inputs (CK, /CK), and a 2-bit refresh control (1x or 4x). The 84-WBGA ballout follows JEDEC standard for x16 DDR2 and is pin-compatible with industry-standard 2-Gbit DDR2 SDRAMs, simplifying second-source qualification. Industrial temperature option (-25I) is available down to -40 C. Typical applications include 720p/1080p video buffering in IP cameras and DVRs, frame buffers in industrial HMI panels, networking line cards requiring 800 MT/s bandwidth, and digital photo frames or set-top box main memory. The combination of x16 width and 1.8 V operation matches legacy DDR2 host controllers without level shifting. When designing with the W972GG6KB-25, follow JEDEC DDR2 PCB layout rules: matched-length CK//CK traces within 5 mils, 50 ohm controlled impedance, VTT termination at 0.9 V via 4.7 uF decoupling, and VREF generation at 0.9 V with 1% tolerance. Decoupling requires 0.1 uF plus 4.7 uF per pin group. This page synthesizes Winbond datasheet parameters, distributor pricing, drop-in equivalents, and PCB layout considerations not consolidated on a single OEM page.
W9751G6KB-25 - 512Mb DDR2-800 SDRAM, x16, 84-WBGA | Winbond
The Winbond W9751G6KB-25 is a 512-Mbit Double Data Rate 2 (DDR2) Synchronous DRAM organized as 32M words by 16 bits, supplied in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA / WBGA) measuring 8 x 12.5 mm. The -25 speed grade delivers a clock rate of 400 MHz (DDR2-800), a 57.5 ns CAS latency timing window at full speed, and a 1.8 V typical operating supply, making it a compact, low-power volatile memory solution for embedded computing platforms. A DDR2 SDRAM is a volatile random-access memory that transfers data on both the rising and falling edges of the clock, doubling the effective data rate of the underlying SDR bus. DDR2 sits in the SDRAM family hierarchy alongside DDR, DDR3, DDR4, and DDR5, and uses a 4-bit prefetch architecture (vs DDR's 2-bit prefetch) to achieve higher throughput at lower clock frequencies. DDR2 devices remain common in cost-sensitive industrial, automotive infotainment, set-top box, networking, and printer applications where the memory controller already supports the JEDEC DDR2 standard and high-density LPDDR alternatives are unnecessary. Key features of the W9751G6KB-25 include the x16 organization, programmable CAS latency (typically 3 to 6), programmable burst length of 4 or 8, on-die termination (ODT), and a self-refresh mode for low standby power. The 8K refresh cycles specification (per JEDEC DDR2) supports standard commercial operating profiles, and the 84-ball WBGA package provides short, controlled-impedance signal paths for reliable 800 MT/s operation. The device is built on a CMOS process and conforms to the JEDEC DDR2 SDRAM standard, enabling drop-in compatibility with other DDR2-compliant memory controllers. Common use cases include frame buffers for displays, working memory for industrial PCs, scratch RAM for Linux/WinCE SoCs, and buffer memory in networking switches. When designing with the W9751G6KB-25, route the 16-bit data bus (DQ0-DQ15), differential clock pair (CK, /CK), command/address bus, and data strobes (DQS, /DQS) with matched lengths and 50 ohm controlled impedance. Place VTT termination, decoupling capacitors, and VREF generation per JEDEC recommendations to achieve a clean 800 MT/s eye at the receiver. This page synthesizes distributor pricing for the W9751G6KB-25, drop-in compatible DDR2 alternatives from Winbond and competitors, and practical PCB layout and termination guidance that augments the manufacturer datasheet.
W9751G6KB-25-TR - 512Mb DDR2 SDRAM x16 84-WBGA | Winbond
The Winbond W9751G6KB-25-TR is a 512 Mbit (32M x 16) Double Data Rate 2 (DDR2) Synchronous DRAM organized as 8M words x 4 banks x 16 bits, housed in an 84-ball WBGA (8 x 12.5 mm) package supplied on tape and reel. It supports a 400 MHz DDR2-800 data rate, equivalent to 57.5 ns clock cycle time, and operates from a 1.7 V to 1.9 V supply with a commercial 0 C to 85 C temperature range. The device uses SSTL_18-compatible stub-series terminated logic I/O to deliver 800 MT/s peak transfer per pin. A DDR2 SDRAM is a synchronous dynamic random-access memory that transfers two data words per clock cycle on both rising and falling edges, doubling peak throughput compared with DDR1 at the same clock rate. DDR2 sits in the SDRAM hierarchy between DDR1 and DDR3, with lower power (1.8 V VDD), higher prefetch (4n), and on-die termination that improves signal integrity on densely routed DIMM or SoC fly-by topologies. It is the standard commodity DRAM of the late-2000s era and remains widely second-sourced today for industrial, set-top, networking, and embedded designs. Key features of the W9751G6KB-25-TR include a 16-bit-wide data interface, 4-bank architecture supporting concurrent operations, programmable CAS Latency (CL), Additive Latency (AL), and Write Latency (WL) to ease controller timing closure, and on-die termination (ODT) for signal-integrity tuning. The 84-WBGA package with 8 x 12.5 mm outline offers a compact footprint for space-constrained boards, while the industrial-commercial temperature window covers most non-automotive embedded environments. The device integrates Winbond's standard DDR2 mode-register set, refresh logic, and self-refresh / power-down modes for low standby current. Programmable burst lengths of 4 and 8 plus burst-chop and burst-interrupt sequences allow efficient DDR2 controller interfacing. The 25 in the part number (W9751G6KB-25) corresponds to the -25 speed grade (CL5 equivalent), supporting 400 MHz operation. Typical applications include IPTV/set-top box main memory buffering, low-end networking line cards, industrial HMI panels, surveillance DVR frame buffers, and consumer-electronics motherboards that still support DDR2 memory. The 512 Mbit density slots in where 64 MB of working memory is needed without the cost of 1 Gb densities. When designing with this part, observe the JEDEC DDR2 fly-by topology recommendations: route command/address/control/clock in a daisy-chain from the controller to the DRAM, place VREF and VTT termination as recommended, and provide a 100 nF plus bulk decoupling near each VDD/VSS pair. This page synthesizes current distributor pricing, drop-in equivalents from Winbond and competitor sources, and practical PCB-layout notes not aggregated on any single manufacturer or distributor page.
W9751G6NB-25 - 512Mb DDR2-800 SDRAM x16 | Winbond
The Winbond Electronics W9751G6NB-25 is a 512 Mbit DDR2 SDRAM memory IC organized as 8,388,608 words x 4 banks x 16 bits (32M x 16), operating at a 400 MHz clock with DDR2-800 data rates and a 57.5 ns access time, housed in an 84-ball VFBGA (8 x 12.5 mm) package. DDR2 SDRAM (Double Data Rate 2 Synchronous Dynamic Random Access Memory) is a type of volatile semiconductor memory that transfers data on both the rising and falling edges of the clock signal, doubling effective bandwidth compared to single data rate SDRAM. Within the memory hierarchy, DDR2 SDRAM sits below DDR3 and DDR4 in performance but remains widely used in cost-sensitive embedded systems. The broader taxonomy runs: DDR2 SDRAM -> SDRAM -> DRAM -> semiconductor memory -> memory IC. Key features of the W9751G6NB-25 include an auto precharge function for simplified memory controller operation, a data mask (DM) function for selective byte writes, and dynamic on-chip termination (ODT) that improves signal integrity at high data rates by terminating the bus at the die rather than on the motherboard. These on-die features reduce external component count and strengthen signal integrity in dense PCB layouts. Technically, the device achieves transfer rates up to DDR2-800 with the -25 speed grade suffix, operating from a 1.8 V supply per the DDR2 JEDEC standard. Winbond sorts the W9751G6NB family into speed grades -18, -25, and -3 (with I and J industrial variants), allowing designers to scale performance within an identical footprint. The 84-ball VFBGA ball map follows the standard DDR2 x16 JEDEC footprint, ensuring controller and PCB compatibility across the family. Typical applications include embedded computing boards, industrial PCs, networking equipment, set-top boxes, and legacy desktop/laptop memory module repair where DDR2 is still required. The x16 organization suits low-cost controllers with narrower 16-bit buses, and its proven presence in systems such as the Dell Latitude D630 demonstrates field reliability. A key design consideration: DDR2 termination must follow the dynamic ODT settings in the Winbond datasheet, and VREF rails require clean, low-noise routing for timing margins to hold across the full 0 to 85 C commercial temperature range. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
W9812G6KH-6 - 128Mb SDRAM x16 166MHz 54-TSOP II | Winbond
The Winbond W9812G6KH-6 is a 128 Mbit synchronous DRAM (SDRAM) organized as 2M words x 4 banks x 16 bits, housed in a 54-pin TSOP II package with a 166 MHz clock rate and LVTTL interface. It delivers up to 200 M words per second of data bandwidth through a single 16-bit I/O bus running at a 5 ns cycle time, making it a mainstream density for embedded SDRAM sockets. A Synchronous DRAM (SDRAM) is a dynamic random-access memory that synchronizes its operation with an external clock, enabling pipelined, multi-bank burst access. Within the broader memory hierarchy, SDRAM sits between asynchronous DRAM and modern DDR/DDR2/3/4 SDRAM. This 128 Mb density represents the high end of single-chip SDRAM and is widely used in legacy MCUs, SoCs, FPGA soft-processors and consumer ASICs that integrate an SDRAM controller but no DDR PHY. The "-6" speed grade corresponds to a 166 MHz / 200 Mbps/pin class device. Key features include four internal banks for concurrent operation, programmable CAS Latency of 2 or 3, a 64 ms refresh interval (8 K cycles), and 3.3 V single-supply operation with LVTTL-compatible I/O. The 54-pin TSOP II footprint is the industry-standard JEDEC pinout for 16-bit SDRAMs, ensuring socket compatibility with second-source parts. The device supports sequential, interleaved and burst-terminate burst modes, and offers low-power features including Power-Down and Self-Refresh modes. The W9812G6KH-6 is fabricated on a CMOS process and is built around four banks of 2M x 16 cells, each with a sense-amplifier and row/column decoder pipeline. The 5 ns clock-to-access time at 166 MHz matches PC133 SDRAM timing, and the device is fully synchronous to the positive edge of the system clock. The interface uses a single 16-bit DQ bus shared by all banks, with separate DQM byte-mask controls to enable byte-write operations. Typical applications include set-top boxes, network printers, IP cameras, point-of-sale terminals, and industrial HMI panels. It also serves as main memory for mid-range MCUs such as the Winbond W90N745, NXP i.MX family, and various FPGAs with embedded SDR controllers. The wide ecosystem of compatible second-source parts makes it a low-risk design choice. When designing with the W9812G6KH-6, observe the JEDEC SDRAM 16-bit TSOP II routing topology - keep DQ/DQS/CLK traces matched within the prescribed skew window and provide a low-impedance VDD/SS plane beneath the package. Decoupling should use 0.1 uF ceramics at every VDD/VSS pair. Termination is generally not required for clock rates up to 166 MHz when traces are kept short. This page synthesizes distributor pricing from DigiKey, Mouser, LCSC and Octopart, drop-in alternatives from the Winbond W9812G6KH speed-grade family, and cross-vendor pin-compatible replacements from the JEDEC 128 Mb x16 SDRAM category - data not aggregated in any single manufacturer datasheet.
W9812G6KH-6-TR - 128Mb SDR SDRAM 166MHz LVTTL 54-TSOP II | Winbond
The Winbond W9812G6KH-6-TR is a 128 Mbit synchronous dynamic random access memory (SDRAM) device organized as 2M words × 4 banks × 16 bits (8M × 16), supplied in a 54-pin TSOP II package and operating from a 3.3 V LVTTL interface at a clock frequency of 166 MHz with a 5 ns access time. It conforms to the JEDEC standard for 128 Mb SDRAM and supports sequential and interleaved burst modes of 1, 2, 4, 8, or full page. A SDR SDRAM (synchronous DRAM) is a volatile memory technology that synchronizes all read/write operations to a system clock, in contrast to older asynchronous DRAM. It belongs to the SDRAM family within the broader DRAM hierarchy, itself a category of volatile random-access memory used as main working memory and frame buffers. SDR SDRAM preceded DDR, DDR2, DDR3 and subsequent double-data-rate generations and remains in legacy industrial, automotive infotainment, set-top box, printer, and embedded designs where interface compatibility and low cost outweigh bandwidth demands. Key features include self-refresh mode for low-power standby, power-down mode, programmable CAS latency of 2 or 3, auto precharge and auto refresh, and a deep power-down option. The device supports LVTTL inputs and is fully synchronous with positive-edge clocked control. Operating current is approximately 130 mA (active) and self-refresh current is typically under 1 mA, making it suitable for battery-backed or energy-conscious designs. Architecturally, the W9812G6KH-6-TR combines four internal banks that can operate independently, allowing concurrent row activation across banks for improved throughput at high command rates. Each bank contains 2M words of 16-bit cells; the chip therefore presents an 8M × 16 logical organization. Programmable mode register settings control burst length, burst type, CAS latency and write mode. Typical applications include industrial control mainboards, legacy PC graphics frame buffers, network routers, set-top boxes, printers, scanners, digital still cameras, and embedded Linux boards using SDRAM-equipped SoCs. The wide operating temperature and stable supply tolerance make it especially attractive for long-life industrial designs. Designers should pay attention to PCB trace length matching of the clock, DQ, DQS and command/address groups. Improper impedance control on a 54-TSOP II footprint can introduce access-time violations at 166 MHz; reference Winbond application guidance for 50 Ω single-ended traces. This page synthesizes current distributor pricing for the W9812G6KH-6-TR, lists pin-compatible same-brand and cross-brand drop-in alternatives (W9812G6JH-6, W9812G6KH-6I, IS42S16160B, MT48LC8M16A2) and provides design notes that complement the official Winbond datasheet.
W9812G6KH-6I TR - 128Mb SDRAM 166MHz 3.3V | Winbond
The Winbond Electronics W9812G6KH-6I TR is a 128Mbit synchronous dynamic random access memory (SDRAM) organized as 2M words x 4 banks x 16 bits, operating at up to 166 MHz with a 3.3V LVTTL interface in a 54-pin TSOP-II package, supplied on tape and reel for automated assembly. An SDRAM is a type of DRAM that synchronizes all address, data, and control signals to a system clock, allowing pipelined burst accesses at the clock edge. Within the memory hierarchy, SDRAM sits above asynchronous DRAM (FPM/EDO) and below DDR generations, and remains the standard volatile memory choice for microcontroller, DSP, and FPGA systems that lack DDR controllers. The W9812G6KH family belongs to the broader DRAM and volatile memory IC category. Key features include a 166 MHz clock rate at CL3 (-6I speed grade), a data bandwidth of up to 200M words per second, four internal banks with interleaved operation to hide precharge and row-to-row delays, and programmable CAS latency and burst lengths (1, 2, 4, 8, or full page). The industrial temperature rating (-40C to +85C) makes the -6I grade suitable for harsh environments. Technically, the device uses a synchronous interface with row and bank activation commands, auto-refresh and self-refresh modes, and auto/precharge options per the standard SDRAM command set. Power is supplied at a nominal 3.3V with LVTTL logic levels, and clock-enable (CKE) support allows power-down for reduced standby current. Typical applications include embedded controller buffering, network equipment line-card memory, industrial HMI frame buffers, and FPGA-based data acquisition systems where an SDR SDRAM controller is already implemented. A key design consideration is refresh budgeting: allocate tRFC and 4096 refresh cycles per 64 ms into your controller scheduling, and terminate clock and address lines appropriately at 166 MHz to maintain signal integrity on a 54-pin TSOP-II footprint. This page synthesizes distributor pricing, drop-in alternatives across Winbond and ISSI, and practical design notes not found in the manufacturer datasheet.
W9816G6JH-6 - 16Mb SDR SDRAM, 166 MHz, TSOP-50 | Winbond
The Winbond W9816G6JH-6 is a 16 Mbit synchronous DRAM (SDRAM) organized as 512K words x 2 banks x 16 bits, operating at a clock frequency of 166 MHz with a 5 ns column access time in a 50-pin TSOP II package. The W9816G6JH-6 is the speed grade -6 variant in a family that includes -5, -6, -6I (industrial temperature), -7, and -7I variants, delivering up to 200M words per second of data bandwidth per the Winbond datasheet. An SDR SDRAM is a synchronous dynamic random-access memory that uses a single-ended clock to synchronize command, address, and data transfers on a rising edge. SDRAM sits in the memory hierarchy between asynchronous SRAM (lowest density, no refresh, simpler) and later-generation DDR SDRAM (higher bandwidth via double data rate and on-die termination). It belongs to the broader category of volatile memory ICs, where each bit is stored on a capacitor-refreshed cell. The W9816G6JH-6 features a 16-bit data bus, two internal banks for interleaved operation, and a synchronous interface driven by CLK, CKE, /RAS, /CAS, /WE, /CS, and DQML/DQMH byte-mask lines. Self-refresh and power-down modes are supported for low standby power, and the device operates from a 3.3 V supply typical for SDR SDRAM. The 50-TSOP II package (10.16 mm body width) is the JEDEC standard form factor for SDR SDRAM, enabling direct drop-in replacement in legacy embedded designs. Typical applications include embedded Linux/MCU systems requiring bulk volatile memory (set-top boxes, industrial controllers, printers, automotive infotainment of its era), legacy networking equipment with 16-bit external memory buses, and graphic LCD frame buffers. The 5 ns access time makes it suitable for ARM7/ARM9-class processors and older MIPS cores that interface to SDRAM at 100-166 MHz. The two-bank architecture supports interleaved row activation that reduces precharge latency in streaming workloads. When designing with this part, observe JEDEC standard PCB layout rules for TSOP-50: keep data, address, and clock traces matched within ±25 ps, maintain a continuous ground plane beneath the package, and use VSS/VCCQ decoupling capacitors within 5 mm of the supply pins. Because this is a 3.3 V parallel SDRAM, confirm that the host controller's external memory interface supports the LVTTL levels used by the W9816G6JH-6 before layout commit. The W9816G6JH-6I variant adds industrial temperature range (-40C to +85C) for harsh environments. This page synthesizes cross-reference candidates, parametric comparisons, and design notes from the Winbond datasheet and distributor listings that are not aggregated on a single product page elsewhere.
W9825G6KH-6 - 256Mb 166MHz SDR SDRAM | Winbond | 54-TSOP II
The Winbond Electronics W9825G6KH-6 is a 256Mbit (16M x 16) Synchronous DRAM (SDRAM) memory IC operating at 3.3V with a clock speed of 166 MHz in a 54-pin TSOP II surface-mount package. The -6 speed grade delivers a data bandwidth of up to 200M words per second, making it one of the most widely used external RAM devices in cost-sensitive embedded systems. SDRAM (Synchronous Dynamic Random Access Memory) is a class of DRAM synchronized to the system clock, allowing a memory controller to execute commands - activate, read, write, precharge - on defined clock edges rather than asynchronously. Within the memory hierarchy, SDRAM sits between on-chip SRAM caches and non-volatile storage such as NOR/NAND flash, providing megabytes of fast working memory for processors that lack sufficient internal RAM. Key features of the W9825G6KH include a x16 organization (16,777,216 words x 16 bits), four internal banks with burst lengths of 1, 2, 4, 8, or full-page, and programmable CAS latency. The device complies with the personal computer industrial standard for SDRAM and is sorted into speed grades -5, -5I, -6, -6I, -6J, -6L, -75, 75J and 75L per the Winbond datasheet, so the -6 grade designates the commercial-temperature 166 MHz version. Technically, the W9825G6KH uses a four-bank architecture with row and column addressing (12 row address lines, 8 column address lines for x16), bank activate/read/write/precharge commands, and auto-refresh with self-refresh entry for low-power standby. Two DQM (data mask) pins enable byte-lane masking on the 16-bit bus, and mode register programming selects burst length, burst type, and CAS latency. Typical applications include external memory expansion for STM32, NXP i.MX RT, and other MCUs/MPUs with SDRAM controllers, industrial HMI display frame buffers, network appliance buffers, and data acquisition buffering. Its 3.3V interface and standard TSOP II footprint keep board-level integration simple. Design consideration: maintain proper signal integrity by keeping clock, DQM, and address traces length-matched, and implement the full auto-refresh schedule required by the controller to prevent data loss. This page synthesizes distributor pricing, verified drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
W9864G6JH-6 - 64Mb SDRAM 4Mx16 166MHz TSOP-54 | Winbond
The Winbond W9864G6JH-6 is a 64-Mbit high-speed synchronous dynamic random access memory (SDRAM) organized as 1M word x 4 banks x 16 bits, housed in a 54-pin TSOP-II (Type II) package. It supports a 166 MHz clock rate with a 5 ns access time and operates from a single 3.3 V supply (3.0 V to 3.6 V). The device uses a 4-bank architecture with bank-active/auto-refresh/self-refresh modes, delivering up to 200M words per second of data bandwidth on a 16-bit data bus. An SDRAM (Synchronous Dynamic Random Access Memory) is a class of volatile DRAM that synchronizes all timing with the system clock, replacing older asynchronous DRAM and enabling pipelined burst operations. It sits in the memory hierarchy between cache and mass storage, offering higher density than SRAM at lower cost, and is a member of the broader semiconductor memory family that includes SRAM, NOR flash, and NAND flash. SDRAM parts are organized as banks, rows, and columns; commands (RAS, CAS, READ, WRITE, PRECHARGE, REFRESH) are latched on the rising clock edge. Key features of the W9864G6JH-6 include programmable CAS latency of 2 or 3, programmable burst length of 1, 2, 4, 8, or full page, auto-refresh and self-refresh power-down modes, LVTTL-compatible I/O, and LVCMOS-compatible address/command inputs. The TSOP-II 54-pin, 0.4-inch-wide, 0.65 mm-pitch package is the industry-standard JEDEC footprint for x16 SDRAM, allowing PCB reuse across densities and vendors. Power dissipation is low because the device enters self-refresh during idle periods and supports a power-down mode that disables the clock when no operation is in progress. Architecturally, the W9864G6JH-6 uses four internal banks that allow concurrent row activation while another bank is being read or written, effectively doubling the throughput compared with single-bank DRAM of similar speed grade. The -6 speed suffix indicates a 166 MHz CAS-3 grade, which the Winbond datasheet specifies as 5 ns tRAC / 5 ns tAC / 2 ns tOH. The LVCMOS/LVTTL interface is fully compliant with 3.3 V logic levels used by PCI, MPEG, and embedded MCU/ASIC hosts. Typical applications include set-top box video buffers, set-top box MPEG transport stream buffers, networking line cards, industrial controllers, printers, and any embedded system that needs a low-density, low-cost synchronous DRAM. In modern designs the part is most often chosen for legacy or cost-sensitive platforms that have not yet migrated to DDR/DDR2/LPDDR. When designing with the W9864G6JH-6, place a 0.1 uF decoupling capacitor close to each VDD pin and provide a 22 ohm series resistor on the clock line to damp overshoot; respect the JEDEC refresh interval of 15.6 us at 0-70 C to retain data.
W989D6DBGX6I - 512Mbit Mobile LPSDR SDRAM x16 166MHz | Winbond
The Winbond Electronics W989D6DBGX6I is a 512Mbit (32Mx16) Mobile Low-Power SDRAM (LPSDR) memory IC organized as 32M words x 16 bits, operating from a single 1.8V supply at a 166 MHz clock rate with 5 ns access time, and housed in a 54-ball VFBGA (8x9) package. The device is fabricated on a 46 nm CMOS process and supports the industry-standard JEDEC LPSDR interface with self-refresh and partial-array self-refresh (PASR) modes that minimize standby power in battery-powered designs. Mobile LPSDR SDRAM is a derivative of the standard SDRAM specification optimized for handheld and portable applications. It is a synchronous dynamic random-access memory, meaning it stores each bit in a separate capacitor inside an array of memory cells, and is refreshed periodically to retain data. Compared with standard SDRAM, LPSDR adds partial-array refresh, temperature-compensated self-refresh, and a deep power-down mode, which dramatically reduce the average current draw in standby. Architecturally LPSDR belongs to the SDRAM family, which in turn is part of the volatile memory hierarchy below SRAM and above NOR/NAND flash in cost per bit. Key features of the W989D6DBGX6I include a x16 data interface, four internal banks for concurrent operation, programmable CAS latency of 2 or 3, programmable burst length of 1, 2, 4, 8, or full page, and on-chip temperature compensation for self-refresh current. The VFBGA-54 (8x9) package measures only 8 mm x 9 mm with a 0.8 mm ball pitch, making it suitable for space-constrained PCB layouts where thin-profile memory stacking is required. The device operates across the industrial -40C to +85C temperature range, designated by the trailing "I" suffix in the MPN. Typical applications for the W989D6DBGX6I include smartphone baseband buffers, wearable and smartwatch frame buffers, portable media player RAM, automotive infotainment working memory, industrial HMI panels, and IoT edge devices that need 32 MB of low-power working RAM. The 1.8V VDDQ/JEDEC-compliant LPSDR interface allows direct connection to common application processors and SoCs that expose an LPSDR/LPDDR controller. When designing with the W989D6DBGX6I, observe the JEDEC LPSDR PCB layout guidelines: keep the 16 data lines (DQ0-DQ15), clock (CLK), clock-enable (CKE), and the command/address bus length-matched within ±25 mil, place a 0.1 µF decoupling capacitor per VDD pin within 100 mil of the ball, and reserve a continuous ground plane beneath the package. The partial-array self-refresh register must be configured during initialization to achieve the lowest standby current in always-on applications. This page synthesizes distributor pricing, drop-in alternatives within the same VFBGA-54 footprint, and practical PCB design notes that go beyond the bare datasheet content.
W989D6DBGX6I-TR - 512Mb Mobile LPSDR SDRAM, x16, 166MHz | Winbond
The Winbond W989D6DBGX6I-TR is a 512Mb (32M x 16) Mobile Low-Power SDR (LPSDR) SDRAM organized as 16-bit wide data, operating at 5 ns clock period (166 MHz), in a 54-ball VFBGA (8x9) package, and supplied from a 1.8 V rail. It is built on a 46 nm process node and qualified to industrial temperature range (-40C to +85C). The suffix -TR denotes tape-and-reel packing for high-volume SMT assembly. A Mobile LPSDR SDRAM is a class of low-power dynamic random-access memory that follows the JEDEC LPSDR standard (a low-voltage derivative of the SDR SDRAM family) designed for portable consumer electronics. It fits into the hierarchy LPSDR -> SDR SDRAM -> DRAM -> volatile memory -> semiconductor. LPSDR devices traditionally serve mobile phones, PMPs, GPS modules and other handhelds where 1.8 V I/O, low standby current and deep power-down modes are required. Compared with classic 3.3 V SDR SDRAM, Mobile LPSDR cuts I/O power roughly in half. Key features of the W989D6DBGX6I-TR include: 512 Mbit density, x16 organization (32M words x 16 bits), 166 MHz / 5 ns maximum clock rate, 1.8 V single supply, four internal banks, and selectable CAS Latency (CL=2/3). The 46 nm process enables lower active current than the previous 60-90 nm generations of Winbond Mobile SDR. The device supports standard SDRAM commands: MRS, REF, ACT, PRE, RD, WR, plus partial-array self-refresh (PASR) and a deep power-down (DPD) mode for battery saving. Architecturally, the W989D6DBGX6I-TR uses a 4-bank page-mode architecture with a 1024-cycle refresh window. Each bank contains 8K rows of 1K x 16 bits. The 16-bit wide host bus simplifies connection to mobile application processors with 16-bit SDR controllers, eliminating external bus-width conversion. The 54-ball VFBGA (8 mm x 9 mm) footprint allows reflow-compatible SMT assembly with controlled impedance routing for clock, DQS and data nets. Typical applications include mobile phone main displays and user-interface framebuffers, portable media players (PMP), handheld gaming devices, GPS/PDA terminals, digital photo frames, low-end tablet controllers, automotive infotainment secondary displays, and embedded Linux devices that need a low-cost 16-bit external RAM expansion. The industrial temperature range also makes the part suitable for in-cabin automotive, outdoor signage, and rugged industrial handhelds. When designing with this device, pay attention to PCB layout: route CK, CK# and DQS as length-matched, 50 ohm controlled-impedance pairs; place 0.1 uF plus 1 uF decoupling near each VDD/VDDQ ball; and follow the Winbond Mobile LPSDR layout checklist for VFBGA break-out. Power-rail sequencing must observe tRCD=18 ns, tRP=18 ns, and tRFC=110 ns; failure to meet these will corrupt refresh and lose data. This page synthesizes distributor pricing (Mouser, DigiKey, LCSC, Octopart), 5-8 drop-in alternatives, application notes, and design guidance not found on the manufacturer datasheet, giving buyers and engineers a single source for selection.
WT:A - Micron 48Gb LPDDR4 SDRAM Mobile Memory | Micron
Micron Technology MT53E1536M32D4DT-046 WT:A is a 48 Gbit Mobile LPDDR4 SDRAM memory IC in the MT53E family, rated at 2.133 GHz and supplied in a 200-ball TFBGA. According to DigiKey listing data retrieved on 2026-10-09, the part is a Mobile LPDDR4 device intended for high-density, low-power system designs that require the bandwidth of LPDDR4 with the smallest possible PCB footprint. What is an LPDDR4 SDRAM? LPDDR4 (Low-Power Double Data Rate 4) is a JEDEC-standardized volatile memory category optimized for mobile and power-constrained applications. Compared with LPDDR3 and DDR3/DDR4, LPDDR4 uses a low-swing I/O interface (V<sub>DDQ</sub> typically 1.1 V), 2n-prefetch architecture, and deep power-down modes, positioning it within the broader mobile memory hierarchy: LPDDR4 -> SDRAM -> volatile memory -> memory IC -> semiconductor. LPDDR4 is the memory type used in virtually every high-end smartphone application processor, and is increasingly adopted in automotive infotainment, edge AI, and ultra-thin notebooks. Key features of this 48 Gbit MT53E1536M32D4DT-046 WT:A device include a 1536M x 32-bit logical organization, 2.133 GHz data rate per the -046 speed-bin suffix, and operation from a low-voltage core rail to maximize battery life. The 200-ball TFBGA package is thin-profile and thermally efficient, suiting space-limited mobile platforms. The device supports the standard LPDDR4 command set including multi-channel operation, low-power states (IDD2N, IDD3P, IDD6), and on-die temperature sensing. The architecture follows Micron's 1y-nm-class mobile DRAM process, enabling a high-density 48 Gbit monolithic die. Combined with the -046 speed grade, this delivers the throughput needed for multi-camera image pipelines, 4K video encode/decode buffers, and large neural network inference workloads running on the application processor. The wide 32-bit datapath keeps channel-count low, simplifying PCB routing on highly integrated SoCs. Typical applications include flagship smartphone application processors, ultra-thin notebook main memory, automotive infotainment platforms, edge AI inference accelerators, AR/VR headset compute modules, and embedded single-board computer platforms. The wide temperature support and small form factor make it attractive in any design that demands high memory density with low standby power. When designing with the MT53E1536M32D4DT-046 WT:A, ensure the host SoC's LPDDR4 PHY matches the 2.133 GHz speed bin to avoid down-training. Decoupling and PCB stack-up should follow the Micron LPDDR4 design guide, with controlled-impedance routing for the CA and DQ byte lanes and matched lengths within each byte group. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on a one-line distributor listing.
XCF02SVOG20C - 2Mb Platform Flash PROM for FPGA Config | AMD/Xilinx
The AMD/Xilinx XCF02SVOG20C is a 2-Mbit in-system programmable configuration PROM designed to store configuration bitstreams for Xilinx FPGAs, housed in a 20-pin TSSOP package. It provides 2,097,152 bits of NOR Flash memory organized as 2,000K x 1, operates from a 3.0V to 3.6V supply, and supports the IEEE 1149.1 / IEEE 1532 JTAG standard for in-system programming and boundary-scan testing. The device delivers guaranteed endurance of 20,000 program/erase cycles and minimum data retention of 20 years, making it suitable for long-lifecycle industrial and embedded designs. A Platform Flash PROM is a non-volatile configuration memory IC purpose-built to hold FPGA bitstreams outside the FPGA fabric. In the broader component taxonomy it belongs to NOR Flash -> non-volatile memory -> memory IC -> integrated circuit. Unlike discrete SPI Flash or parallel boot memories, Platform Flash devices integrate the JTAG programming chain, FPGA hand-shake pins (CCLK, DONE, INIT, PROGRAM) and a cascade-ready architecture, so a single IC can boot a Xilinx Spartan or Virtex FPGA without external glue logic. Key features include 2Mb density in a compact 20-TSSOP footprint, low-power advanced CMOS NOR Flash process, cascadable bitstream expansion for larger FPGAs, and JTAG boundary-scan with 3-stage registers per bidirectional pin. The industrial temperature grade (VOG suffix = -40C to +85C) and lead-free TSSOP-20 packaging make XCF02SVOG20C a mainstream choice for cost-sensitive Spartan-3 / Spartan-3A designs. The OG20C suffix denotes a TSSOP-20 package supplied in tube. From a system-level perspective, XCF02SVOG20C connects directly to the FPGA's configuration mode pins (M[2:0] = 010 selects Master Serial mode). On power-up the PROM serial-clocks the bitstream via the FPGA CCLK pin, the FPGA drives DONE high, and the PROM tri-states its data line. The bidirectional pins are observable and controllable through the JTAG boundary-scan register, which speeds prototype debug and board-level interconnect testing. The NOR Flash cell array provides fast read access with low standby current. Typical applications include Spartan-3, Spartan-3A, Spartan-3E, and Virtex-II configuration storage, industrial control boards, factory automation equipment, medical imaging FPGA platforms, and any design that requires a small-footprint non-volatile boot source for Xilinx FPGAs. Two or more XCF02S PROMs can be cascaded to support larger bitstreams for higher-density FPGAs. When designing with XCF02SVOG20C, confirm the FPGA bitstream does not exceed 2Mb before committing the BOM. AMD PCN XCN20013 (2026) confirms there is NO direct drop-in replacement for XCF02SVOG20C; design teams are advised to forecast demand and place final orders before key dates in Appendix A of that PCN, or migrate the FPGA to a newer family that boots from internal SPI Flash. This page synthesizes distributor pricing, lifecycle risk context (XCN20013), drop-in alternative scarcity, and practical design notes not found in the manufacturer datasheet alone.