W634GU6RB11J - 4Gb DDR3L SDRAM x16 933MHz | Winbond
N.º de pieza: W634GU6RB11J ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $13.87 | $13,87 |
| 10 | $12.5 | $125,00 |
| 100 | $11.2 | $1.120,00 |
| 500 | $10.1 | $5.050,00 |
| 1.000 | $9.5 | $9.500,00 |
W634GU6RB11J Descripción general
DDR3L (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory (SDRAM) that operates at 1.35V, reducing power consumption by about 20% compared to standard DDR3 (1.5V). It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is commonly used in mobile devices, embedded systems, and industrial applications where power efficiency is critical.
Key features include auto self-refresh, auto precharge, data mask, write leveling, ZQ calibration, asynchronous reset, and dynamic on-chip termination (DTC). These features enhance signal integrity and simplify system design. The device supports industrial temperature range from -40°C to +95°C, making it suitable for harsh environments. It is RoHS compliant and halogen-free, aligning with environmental standards.
Technically, the W634GU6RB11J uses a 96-ball VFBGA package with a 0.8mm ball pitch, providing excellent thermal and electrical performance. The memory array is organized in 8 banks, and the device supports programmable CAS latency (CL) and additive latency (AL) for flexible timing. The on-die termination (ODT) feature improves signal quality by matching impedance, reducing reflections on the data bus.
Typical applications include networking equipment, industrial automation, medical devices, and embedded computing systems where high-density, low-power memory is required. The 4Gb density and x16 organization make it ideal for applications needing moderate memory capacity with a wide data bus.
When designing with this device, ensure proper decoupling capacitors near the VDD and VDDQ pins to minimize power supply noise. Also, follow the JEDEC DDR3L layout guidelines for signal integrity, including controlled impedance traces and proper termination.
Alternativas directas para W634GU6RB11J — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con W634GU6RB11J (mismo factor de forma y huella) — difiere en Operating Temperature, Package, Supply Voltage, Clock Frequency, Data Rate.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
W634GU6RB-11
✅ Sustitución directa✓ En stock
$13.5227 / unidad
Ver hoja de datos →W634GU6RB11K
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MT41K256M16TW-107
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$14.1 / unidad
Ver hoja de datos →IS43TR16512BL-107MBL
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
K4B4G1646E-BYMA
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$14.3182 / unidad
Ver hoja de datos →W634GU6RB11J Valores máximos y características eléctricas
| Tipo de memoria | SDRAM - DDR3L |
| Tamaño de memoria | 4Gbit (256M x 16) |
| Clock Frequency | 933 MHz |
| Velocidad de datos | 1866 MT/s |
| Interfaz | Parallel |
| Tensión de alimentación | 1.35V |
| Latencia CAS | 20 ns |
| Encapsulado | 96-VFBGA (7.5x13 mm) |
| Temperatura de funcionamiento | -40°C to +95°C |
| Tipo de montaje | Surface Mount |
| Estado RoHS | Compliant |
| Sin halógenos | Yes |
| Auto Self-Refresh | Yes |
| Write Leveling | Yes |
| ZQ Calibration | Yes |
Configuración de pines de W634GU6RB11J
| Pin A1 | VDD — Power supply |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin B1 | VSS — Ground |
| Pin B2 | DQ2 — Data input/output 2 |
| Pin B3 | DQ3 — Data input/output 3 |
| Pin C1 | VDDQ — I/O power supply |
| Pin C2 | DQ4 — Data input/output 4 |
| Pin C3 | DQ5 — Data input/output 5 |
| Pin D1 | VSSQ — I/O ground |
| Pin D2 | DQ6 — Data input/output 6 |
| Pin D3 | DQ7 — Data input/output 7 |
Aplicaciones típicas
W634GU6RB11J es adecuado para 6 aplicacións: Networking Equipment, Industrial Automation, Medical Devices, Embedded Computing, Automotive Infotainment, Test & Measurement.
Networking Equipment
The W634GU6RB11J provides high-density, low-power memory for routers and switches. Its 4Gb capacity and 1866 MT/s data rate support high-bandwidth packet processing. The 1.35V operation reduces power consumption in 24/7 operation, and the industrial temperature range ensures reliability in telecom cabinets. The x16 interface simplifies PCB routing, and features like write leveling improve signal integrity at high speeds.
Recomendado
Industrial Automation
In industrial controllers, the W634GU6RB11J offers reliable memory for real-time data logging and control algorithms. Its -40°C to +95°C range suits factory floors, and auto self-refresh maintains data integrity during power-saving modes. The 1.35V supply reduces heat generation, and the 96-ball VFBGA package withstands vibration. The 4Gb density supports complex HMI applications without external storage.
Recomendado
Medical Devices
The W634GU6RB11J is ideal for medical imaging and patient monitoring systems that require high-speed, low-power memory. Its 1866 MT/s data rate enables fast image processing, while 1.35V operation extends battery life in portable devices. The industrial temperature range ensures reliable operation in clinical environments. The x16 interface simplifies connection to medical-grade processors, and features like DTC improve signal quality for error-free data transfer.
Recomendado
Embedded Computing
For embedded systems like single-board computers and IoT gateways, the W634GU6RB11J provides a balance of capacity and power efficiency. Its 4Gb size supports Linux-based applications, and the 1.35V supply is compatible with low-power SoCs. The 96-ball VFBGA package is compact for space-constrained designs. Features like ZQ calibration ensure reliable operation across temperature variations, making it suitable for outdoor IoT deployments.
Recomendado
Automotive Infotainment
The W634GU6RB11J supports automotive infotainment systems requiring high-bandwidth memory for navigation and multimedia. Its 1866 MT/s data rate handles HD video playback, and the 1.35V supply reduces heat in the cabin. The industrial temperature range covers automotive environments, and features like write leveling ensure stable operation. The x16 interface connects easily to automotive SoCs, and the compact package fits head units.
Recomendado
Test & Measurement
In oscilloscopes and data acquisition systems, the W634GU6RB11J provides fast, reliable memory for waveform storage. Its 1866 MT/s data rate enables high-speed sampling, and the 4Gb capacity stores long records. The 1.35V operation reduces noise, and the industrial temperature range ensures accuracy in lab and field use. The x16 interface simplifies connection to FPGAs, and features like auto precharge improve efficiency.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para W634GU6RB11J — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | W634GU6RB-11 | W634GU6RB11K | MT41K256M16TW-107 |
|---|---|---|---|---|
| Package | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) | 96-FBGA (7.5x13) |
| Brand | Winbond Electronics | Winbond Electronics | Winbond Electronics | Micron Technology |
| Memory Size | 4Gbit | 4Gbit | 4Gbit | 4Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Clock Frequency | 933 MHz | 933 MHz | 933 MHz | 933 MHz |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Operating Temperature | -40°C to +95°C | -40°C to +95°C | -40°C to +95°C | 0°C to +95°C |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Diferenciadores clave
- Industrial temperature range (frente a MT41K256M16TW-107)
- Renewable energy option (frente a W634GU6RB-11)
- Low power consumption (frente a K4B4G1646E-BYMA)
Notas de diseño
Ensure proper decoupling capacitors (0.1uF and 1uF) are placed close to each VDD and VDDQ pin to minimize power supply noise. Follow JEDEC DDR3L layout guidelines for controlled impedance traces (typically 50 ohms single-ended, 100 ohms differential) and maintain equal trace lengths for DQ and DQS signals to ensure signal integrity at 1866 MT/s.
The W634GU6RB11J operates over -40°C to +95°C. In high-ambient-temperature environments, ensure adequate airflow or heatsinking to keep the junction temperature within limits. The 1.35V supply reduces power dissipation, but at 1866 MT/s, the device can still generate significant heat. Use thermal vias under the package to improve heat transfer to the PCB.
Do not exceed the absolute maximum ratings for VDD (1.575V) and VDDQ (1.575V). Ensure the memory controller is configured for DDR3L (1.35V) operation, not DDR3 (1.5V), to avoid damage. Also, verify that the CAS latency and timing parameters match the controller's settings to prevent data corruption.
Información de cumplimiento
RoHS and halogen-free per Winbond. AEC-Q100 not specified for this part; automotive variants may be available.
