W634GU6RB12J - 4Gb DDR3L SDRAM 933MHz | Winbond
N.º de pieza: W634GU6RB12J ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.1 | $710,00 |
| 500 | $6.5 | $3.250,00 |
| 1.000 | $6 | $6.000,00 |
W634GU6RB12J Descripción general
DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high data rates. It is part of the DDR3L memory family, which is widely used in computing, networking, and industrial applications where power efficiency is critical.
Key features include a 4Gbit density, x16 organization, 933 MHz clock speed, and support for the DDR3L-1866 specification. The device offers a burst length of 8 and supports on-die termination (ODT) for improved signal integrity. It operates over a temperature range of -40°C to +105°C (TCASE) for the 12J industrial plus grade, making it suitable for harsh environments.
The W634GU6RB12J utilizes advanced DRAM process technology to achieve high speed and low power. It includes features such as programmable CAS latency, write leveling, and self-refresh modes to optimize performance and power consumption. The 96-ball VFBGA package provides excellent thermal and electrical performance.
Typical applications include embedded systems, networking equipment, industrial automation, and automotive infotainment. The low voltage and high speed make it ideal for power-sensitive designs that require high memory bandwidth.
When designing with this device, ensure proper decoupling and signal integrity practices are followed. The DDR3L interface requires careful PCB layout to minimize crosstalk and maintain signal quality at high speeds.
Alternativas directas para W634GU6RB12J — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con W634GU6RB12J (mismo factor de forma y huella) — difiere en Operating Temperature, Package, Supply Voltage, Memory Size, CAS Latency.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
W634GU6RB-11
✅ Sustitución directa✓ En stock
$13.5227 / unidad
Ver hoja de datos →W634GU6NB12J
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
W634GU6NB12I
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MT41K256M16TW-107
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$14.1 / unidad
Ver hoja de datos →IS43TR16512B-15HB
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
W634GU6RB12J Valores máximos y características eléctricas
| Tipo de memoria | SDRAM - DDR3L |
| Tamaño de memoria | 4Gbit |
| Organización de memoria | 256M x 16 |
| Interfaz | Parallel |
| Clock Frequency | 933 MHz |
| Access Time | 20 ns |
| Tensión de alimentación | 1.35V |
| Encapsulado | 96-VFBGA (7.5x13) |
| Temperatura de funcionamiento | -40°C to +105°C (TCASE) |
| Speed Grade | 12J (DDR3L-1866) |
| Tipo de montaje | Surface Mount |
| Estado RoHS | Compliant |
| Sin halógenos | Yes |
| Burst Length | 8 |
| On-Die Termination | Yes |
Configuración de pines de W634GU6RB12J
| Pin A1 | VDD — Power supply |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin A4 | VSS — Ground |
| Pin A5 | DQ2 — Data input/output 2 |
| Pin A6 | DQ3 — Data input/output 3 |
| Pin A7 | VDD — Power supply |
| Pin A8 | DQ4 — Data input/output 4 |
| Pin A9 | DQ5 — Data input/output 5 |
| Pin A10 | VSS — Ground |
| Pin A11 | DQ6 — Data input/output 6 |
| Pin A12 | DQ7 — Data input/output 7 |
Aplicaciones típicas
W634GU6RB12J es adecuado para 6 aplicacións: Embedded Computing, Networking Equipment, Industrial Automation, Automotive Infotainment, Consumer Electronics, Test and Measurement.
Embedded Computing
The W634GU6RB12J provides high-density, low-power memory for embedded processors and SoCs. Its 4Gbit capacity and 933 MHz speed support demanding applications like real-time data processing and multitasking. The 1.35V operation reduces power consumption, extending battery life in portable systems. The 96-VFBGA package fits compact PCB designs, enabling space-efficient embedded modules.
Recomendado
Networking Equipment
In routers, switches, and network appliances, the W634GU6RB12J offers the bandwidth and capacity needed for packet buffering and routing tables. Its 933 MHz clock and 20 ns access time ensure low-latency data transfer. The industrial temperature range (-40°C to +105°C) makes it suitable for outdoor and industrial networking gear. The low 1.35V supply reduces heat generation in dense line cards.
Recomendado
Industrial Automation
The W634GU6RB12J is ideal for industrial controllers and PLCs that require reliable memory in harsh environments. Its extended temperature range and RoHS compliance ensure long-term reliability. The 4Gbit capacity supports complex control algorithms and data logging. The parallel interface simplifies integration with industrial SoCs and FPGAs.
Recomendado
Automotive Infotainment
The W634GU6RB12J meets the temperature and reliability requirements for automotive infotainment systems. Its 933 MHz speed supports high-resolution displays and audio processing. The 1.35V operation reduces power draw, important for vehicle electrical systems. The 96-VFBGA package withstands vibration and thermal cycling.
Recomendado
Consumer Electronics
In smart TVs, set-top boxes, and gaming consoles, the W634GU6RB12J provides the memory bandwidth for smooth multimedia playback. Its low power consumption is ideal for energy-efficient designs. The 4Gbit capacity supports multiple applications simultaneously. The compact package enables slim device designs.
Recomendado
Test and Measurement
The W634GU6RB12J is used in oscilloscopes, logic analyzers, and data acquisition systems where high-speed data capture is essential. Its 933 MHz clock and 20 ns access time enable fast data buffering. The industrial temperature range ensures accuracy in varying lab conditions. The low voltage reduces noise in sensitive measurement circuits.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para W634GU6RB12J — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | W634GU6RB-11 | W634GU6NB12J | W634GU6NB12I |
|---|---|---|---|---|
| Package | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) |
| Brand | Winbond Electronics | Winbond Electronics | Winbond Electronics | Winbond Electronics |
| Memory Size | 4Gbit | 4Gbit | 4Gbit | 4Gbit |
| Clock Frequency | 933 MHz | 933 MHz | 933 MHz | 800 MHz |
| Access Time | 20 ns | 20 ns | 20 ns | 20 ns |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Operating Temperature | -40°C to +105°C | -40°C to +105°C | -40°C to +105°C | -40°C to +95°C |
| Speed Grade | 12J (DDR3L-1866) | -11 (DDR3L-1600) | 12J (DDR3L-1866) | 12I (DDR3L-1600) |
Diferenciadores clave
- Higher speed grade (DDR3L-1866) compared to -11 variant (frente a W634GU6RB-11)
- Extended temperature range up to 105°C (frente a W634GU6NB12I)
- Same package and pinout as other Winbond DDR3L variants (frente a W634GU6NB12J)
Notas de diseño
For DDR3L signals, maintain controlled impedance of 40-50 ohms for data lines and 50-60 ohms for address/control lines. Keep trace lengths matched within 100 mils to minimize skew. Use ground planes beneath the memory to reduce noise.
Decouple the VDD pins with 0.1uF and 1uF capacitors placed as close as possible to the device. Use a 10uF bulk capacitor on the power plane. Ensure the 1.35V supply has low ripple (<50mV) to maintain signal integrity.
The W634GU6RB12J can dissipate up to 1.5W under heavy load. Ensure adequate airflow or a thermal pad to keep the case temperature below 105°C. The 96-VFBGA package has a thermal resistance of approximately 20°C/W.
Información de cumplimiento
Winbond states all Flash products are Halogen-Free and RoHS compliant. AEC-Q100 not applicable for DRAM.
