1ED3125MU12FXUMA1 vs 1ED3124MC12HXUMA1 Comparación
Comparación detallada lado a lado de 1ED3125MU12FXUMA1 por Infineon y 1ED3124MC12HXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
1ED3125MU12FXUMA1 - 14A Isolated Gate Driver | Infineon EiceDRIVER
1ED3125MU12FXUMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | 1ED3125MU12FXUMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,55 | $1,45 |
| Manufacturer | Infineon Technologies | — |
| Product Family | EiceDRIVER Compact 1ED31xx | — |
| Función | Single-channel isolated gate driver | — |
| Peak Output Current | 14 A | — |
| Typical Output Current | 10 A | — |
| Isolation Voltage | 3000 Vrms | — |
| Propagation Delay (typ) | 90 ns | — |
| Number of Channels | 1 | — |
| Isolation Technology | Magnetic coupling (coreless transformer) | Magnetic coupling (coreless transformer) |
| Encapsulado | PG-DSO-8 | PG-DSO-8 (DSO-8) |
| Recuento de pines | 8 | — |
| Driver Supply Voltage (VCC) | 3 V to 5.5 V (input side) | — |
| Output Side Supply (VOUT) | 12 V to 20 V | — |
| Rango de temperatura de funcionamiento | -40 C to +150 C | — |
| Active Miller Clamp | Yes | — |
| Short-Circuit Clamping | Yes | — |
| Active Shutdown | Yes | — |
| Undervoltage Lockout (UVLO) | Yes | — |
| Estado RoHS | Compliant | Compliant |
| Channel Type | — | Single-channel |
| Configuration | — | High-side / Low-side (non-inverting) |
| Number of Drivers | — | 1 |
| Número de salidas | — | 1 |
| Peak Source Current | — | 13.5 A |
| Peak Sink Current | — | 14 A |
| Isolation Voltage (RMS) | — | 5.7 kV |
| Transient Overvoltage | — | 8000 Vpk |
| Supply Voltage (VCC2) | — | 10.5 V to 35 V |
| Supply Current (Max) | — | 1.1 mA |
| Propagation Delay (Typ) | — | 90 ns |
| Tiempo de subida | — | 15 ns |
| Tiempo de bajada | — | 30 ns |
| Temperatura de funcionamiento | — | -40 C to +125 C |
| Tipo de montaje | — | Surface Mount |
| Protections | — | UVLO, Short-Circuit (DESAT) |
| Target Devices | — | IGBT, SiC MOSFET |