1EDN6550BXTSA1 vs 1ED3124MU12HXUMA1 Comparación
Comparación detallada lado a lado de 1EDN6550BXTSA1 por Infineon y 1ED3124MU12HXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
1ED3124MU12HXUMA1 - 14A Isolated Gate Driver | Infineon EiceDRIVER
1ED3124MU12HXUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | 1EDN6550BXTSA1 | 1ED3124MU12HXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,44 | $0,89 |
| Product Type | Single-channel gate driver IC | Single-channel isolated gate driver IC |
| Driver Configuration | High-Side / Low-Side, Non-Inverting | — |
| Número de salidas | 1 | — |
| Peak Source Current | 4 A | — |
| Peak Sink Current | 8 A | — |
| Minimum Pulse Width | 29 ns | — |
| Input Type | Differential (TTL-compatible) | — |
| Supply Voltage Range | [DATA_NEEDED: VCC range] | — |
| UVLO Protection | Yes (integrated) | — |
| Temperatura de funcionamiento | -40C to +125C | — |
| Encapsulado | PG-SOT23-6-3 (SOT-23-6) | PG-DSO-8-66 (DSO-8 wide-body) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | [DATA_NEEDED: MSL level] | MSL2 (per JEDEC J-STD-020) |
| Estado RoHS | Compliant | Compliant |
| Recuento de pines | 6 | — |
| Manufacturer Family | — | EiceDRIVER Compact 1ED31xxMU12H (X3 compact) |
| Peak Output Current (source/sink) | — | 14 A typical |
| Configuración de salida | — | Separate source and sink pins |
| Galvanic Isolation (rms) | — | 5.7 kV (UL 1577) |
| Working Voltage (continuous) | — | 1200 V |
| Common-Mode Transient Immunity (CMTI) | — | 200 kV/us minimum |
| Propagation Delay (typ.) | — | 90 ns |
| UVLO Threshold | — | 10.5 V |
| Isolation Technology | — | Coreless transformer (CT) |
| Creepage Distance | — | >8 mm |
| Rango de temperatura de funcionamiento | — | -40C to +125C |
| Target Switch Types | — | IGBT, power MOSFET, SiC MOSFET |
| Recommended Switch Class | — | Up to 2300 V IGBT / SiC modules |