1EDN6550BXTSA1 vs 1ED3124MU12HXUMA1 Comparison

Detailed side-by-side comparison of 1EDN6550BXTSA1 by Infineon and 1ED3124MU12HXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
1EDN6550BXTSA1 1EDN6550BXTSA1 - 5A Gate Driver IC, SOT-23-6 | Infineon

1EDN6550BXTSA1 - 5A Gate Driver IC, SOT-23-6 | Infineon

1EDN6550BXTSA1 βœ“ Active

Specification Comparison

Parameter 1EDN6550BXTSA1 1ED3124MU12HXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.44 $0.89
Product Type Single-channel gate driver IC Single-channel isolated gate driver IC
Driver Configuration High-Side / Low-Side, Non-Inverting β€”
Number of Outputs 1 β€”
Peak Source Current 4 A β€”
Peak Sink Current 8 A β€”
Minimum Pulse Width 29 ns β€”
Input Type Differential (TTL-compatible) β€”
Supply Voltage Range [DATA_NEEDED: VCC range] β€”
UVLO Protection Yes (integrated) β€”
Operating Temperature -40C to +125C β€”
Package PG-SOT23-6-3 (SOT-23-6) PG-DSO-8-66 (DSO-8 wide-body)
Mounting Type Surface Mount Surface Mount
MSL Level [DATA_NEEDED: MSL level] MSL2 (per JEDEC J-STD-020)
RoHS Status Compliant Compliant
Pin Count 6 β€”
Manufacturer Family β€” EiceDRIVER Compact 1ED31xxMU12H (X3 compact)
Peak Output Current (source/sink) β€” 14 A typical
Output Configuration β€” Separate source and sink pins
Galvanic Isolation (rms) β€” 5.7 kV (UL 1577)
Working Voltage (continuous) β€” 1200 V
Common-Mode Transient Immunity (CMTI) β€” 200 kV/us minimum
Propagation Delay (typ.) β€” 90 ns
UVLO Threshold β€” 10.5 V
Isolation Technology β€” Coreless transformer (CT)
Creepage Distance β€” >8 mm
Operating Temperature Range β€” -40C to +125C
Target Switch Types β€” IGBT, power MOSFET, SiC MOSFET
Recommended Switch Class β€” Up to 2300 V IGBT / SiC modules

Datasheets & Resources

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