1EDN7136UXTSA1 vs 1EDN7146UXTSA1 Comparación
Comparación detallada lado a lado de 1EDN7136UXTSA1 por Infineon y 1EDN7146UXTSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | 1EDN7136UXTSA1 | 1EDN7146UXTSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,74 | $0,82 |
| Función | High-side / Low-side gate driver IC | — |
| Driven Device Type | GaN HEMT, N-channel MOSFET | — |
| Número de salidas | 2 (high-side and low-side) | — |
| Peak Source Current | 1 A | — |
| Peak Sink Current | 2 A | — |
| Driver Supply Voltage (Max) | 200 V | — |
| Logic Supply Voltage (VCC) | [DATA_NEEDED: VCC range] | — |
| Input Type | Truly Differential Input (TDI) | — |
| Active Miller Clamp | Yes (integrated) | — |
| Under-Voltage Lockout (UVLO) | Yes (driver supply and logic input) | — |
| Propagation Delay (Typ) | [DATA_NEEDED: propagation delay value] | — |
| Rango de temperatura de funcionamiento | -40 C to +150 C | -40C to +125C |
| Encapsulado | TSNP-6 with exposed pad (PG-VSON-1) | PG-VSON-1 (6-pin with exposed pad) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Sin halógenos | Yes (per Infineon product family convention) | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Driver Type | — | Single-channel high-side TDI gate driver |
| Maximum Blocking Voltage | — | 200 V |
| Input Configuration | — | Truly differential (TDI) |
| Output Current (Source / Sink) | — | 1.5 A / 2.5 A |
| Propagation Delay | — | [DATA_NEEDED: typical propagation delay ns] |
| Tiempo de subida | — | [DATA_NEEDED: typical rise time ns] |
| Tiempo de bajada | — | [DATA_NEEDED: typical fall time ns] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range V] |
| Target Transistor | — | GaN SG HEMT or power MOSFET |
| Topology Support | — | Half-bridge, low-side, high-side |