1EDN7136UXTSA1 vs 1EDN7146UXTSA1 Сравнение
Подробное сравнение бок о бок 1EDN7136UXTSA1 от Infineon и 1EDN7146UXTSA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | 1EDN7136UXTSA1 | 1EDN7146UXTSA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | Power MOSFET Drivers | Power MOSFET Drivers |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,74 | $0,82 |
| Функция | High-side / Low-side gate driver IC | — |
| Driven Device Type | GaN HEMT, N-channel MOSFET | — |
| Количество выходов | 2 (high-side and low-side) | — |
| Peak Source Current | 1 A | — |
| Peak Sink Current | 2 A | — |
| Driver Supply Voltage (Max) | 200 V | — |
| Logic Supply Voltage (VCC) | [DATA_NEEDED: VCC range] | — |
| Input Type | Truly Differential Input (TDI) | — |
| Active Miller Clamp | Yes (integrated) | — |
| Under-Voltage Lockout (UVLO) | Yes (driver supply and logic input) | — |
| Propagation Delay (Typ) | [DATA_NEEDED: propagation delay value] | — |
| Диапазон рабочих температур | -40 C to +150 C | -40C to +125C |
| Корпус | TSNP-6 with exposed pad (PG-VSON-1) | PG-VSON-1 (6-pin with exposed pad) |
| Тип монтажа | Surface Mount | Surface Mount |
| Статус RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Без галогенов | Yes (per Infineon product family convention) | — |
| Уровень MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Driver Type | — | Single-channel high-side TDI gate driver |
| Maximum Blocking Voltage | — | 200 V |
| Input Configuration | — | Truly differential (TDI) |
| Output Current (Source / Sink) | — | 1.5 A / 2.5 A |
| Propagation Delay | — | [DATA_NEEDED: typical propagation delay ns] |
| Время нарастания | — | [DATA_NEEDED: typical rise time ns] |
| Время спада | — | [DATA_NEEDED: typical fall time ns] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range V] |
| Target Transistor | — | GaN SG HEMT or power MOSFET |
| Topology Support | — | Half-bridge, low-side, high-side |