1EDN7136UXTSA1 vs 1EDN7146UXTSA1 Comparaison
Comparaison détaillée côte à côte de 1EDN7136UXTSA1 par Infineon et 1EDN7146UXTSA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | 1EDN7136UXTSA1 | 1EDN7146UXTSA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,74 | $0,82 |
| Fonction | High-side / Low-side gate driver IC | — |
| Driven Device Type | GaN HEMT, N-channel MOSFET | — |
| Nombre de sorties | 2 (high-side and low-side) | — |
| Peak Source Current | 1 A | — |
| Peak Sink Current | 2 A | — |
| Driver Supply Voltage (Max) | 200 V | — |
| Logic Supply Voltage (VCC) | [DATA_NEEDED: VCC range] | — |
| Input Type | Truly Differential Input (TDI) | — |
| Active Miller Clamp | Yes (integrated) | — |
| Under-Voltage Lockout (UVLO) | Yes (driver supply and logic input) | — |
| Propagation Delay (Typ) | [DATA_NEEDED: propagation delay value] | — |
| Plage de température de fonctionnement | -40 C to +150 C | -40C to +125C |
| Boîtier | TSNP-6 with exposed pad (PG-VSON-1) | PG-VSON-1 (6-pin with exposed pad) |
| Type de montage | Surface Mount | Surface Mount |
| Statut RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Sans halogène | Yes (per Infineon product family convention) | — |
| Niveau MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Driver Type | — | Single-channel high-side TDI gate driver |
| Maximum Blocking Voltage | — | 200 V |
| Input Configuration | — | Truly differential (TDI) |
| Output Current (Source / Sink) | — | 1.5 A / 2.5 A |
| Propagation Delay | — | [DATA_NEEDED: typical propagation delay ns] |
| Temps de montée | — | [DATA_NEEDED: typical rise time ns] |
| Temps de descente | — | [DATA_NEEDED: typical fall time ns] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range V] |
| Target Transistor | — | GaN SG HEMT or power MOSFET |
| Topology Support | — | Half-bridge, low-side, high-side |