1EDN7146GXTMA1 vs 2ED2108S06FXUMA1 Comparación
Comparación detallada lado a lado de 1EDN7146GXTMA1 por Infineon y 2ED2108S06FXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | 1EDN7146GXTMA1 | 2ED2108S06FXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,05 | $0,30 |
| Driver Type | High-side, single-channel | — |
| Number of Drivers | 1 | 1 |
| Logic Type | Non-Inverting | — |
| Input Type | TDI (Truly Differential Inductor) | — |
| Maximum Bootstrap Voltage (VB) | 200 V | — |
| Supply Voltage (VCC) | 4.5 V to 20 V | — |
| Source/Sink Drive Current | 500 mA / 500 mA | — |
| Gate Drive Voltage | Up to 11 V (typ) | — |
| Propagation Delay (typ) | 40 ns | — |
| Rise/Fall Time (typ) | [DATA_NEEDED: rise/fall time] | — |
| UVLO (VCC) | Yes | — |
| UVLO (VB) | Yes | — |
| Bootstrap Diode | Integrated | — |
| Temperatura de funcionamiento | -40 C to +125 C | -40 C to +125 C |
| Encapsulado | PG-VSON-10-4 | PG-DSO-8-53 (DSO-8) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 | 1 |
| Driver Configuration | — | Half-Bridge |
| Gate Type | — | N-Channel MOSFET, IGBT |
| Número de salidas | — | 2 (high-side + low-side) |
| Logic Input | — | Non-Inverting |
| Input Voltage (VCC) | — | 10 V to 20 V |
| High-Side Bootstrap Voltage Rating | — | 650 V |
| Peak Source Current (typ.) | — | 0.29 A |
| Peak Sink Current (typ.) | — | 0.7 A |
| Integrated Bootstrap Diode | — | Yes |
| Undervoltage Lockout (UVLO) | — | Yes (VCC and VB) |
| Propagation Delay (typ.) | — | [DATA_NEEDED: propagation delay ns] |
| Rise / Fall Time (typ.) | — | [DATA_NEEDED: tr/tf ns] |