1EDN7146GXTMA1 vs 2ED2108S06FXUMA1 Comparison

Detailed side-by-side comparison of 1EDN7146GXTMA1 by Infineon and 2ED2108S06FXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
1EDN7146GXTMA1

1EDN7146GXTMA1 - 200V TDI Gate Driver IC | Infineon

1EDN7146GXTMA1 βœ“ Active
Infineon
2ED2108S06FXUMA1 2ED2108S06FXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon

2ED2108S06FXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon

2ED2108S06FXUMA1 βœ“ Active

Specification Comparison

Parameter 1EDN7146GXTMA1 2ED2108S06FXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.05 $0.30
Driver Type High-side, single-channel β€”
Number of Drivers 1 1
Logic Type Non-Inverting β€”
Input Type TDI (Truly Differential Inductor) β€”
Maximum Bootstrap Voltage (VB) 200 V β€”
Supply Voltage (VCC) 4.5 V to 20 V β€”
Source/Sink Drive Current 500 mA / 500 mA β€”
Gate Drive Voltage Up to 11 V (typ) β€”
Propagation Delay (typ) 40 ns β€”
Rise/Fall Time (typ) [DATA_NEEDED: rise/fall time] β€”
UVLO (VCC) Yes β€”
UVLO (VB) Yes β€”
Bootstrap Diode Integrated β€”
Operating Temperature -40 C to +125 C -40 C to +125 C
Package PG-VSON-10-4 PG-DSO-8-53 (DSO-8)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
MSL Level 1 1
Driver Configuration β€” Half-Bridge
Gate Type β€” N-Channel MOSFET, IGBT
Number of Outputs β€” 2 (high-side + low-side)
Logic Input β€” Non-Inverting
Input Voltage (VCC) β€” 10 V to 20 V
High-Side Bootstrap Voltage Rating β€” 650 V
Peak Source Current (typ.) β€” 0.29 A
Peak Sink Current (typ.) β€” 0.7 A
Integrated Bootstrap Diode β€” Yes
Undervoltage Lockout (UVLO) β€” Yes (VCC and VB)
Propagation Delay (typ.) β€” [DATA_NEEDED: propagation delay ns]
Rise / Fall Time (typ.) β€” [DATA_NEEDED: tr/tf ns]

Datasheets & Resources

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