1EDN7146GXTMA1 vs 2ED2108S06FXUMA1 Comparison
Detailed side-by-side comparison of 1EDN7146GXTMA1 by Infineon and 2ED2108S06FXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | 1EDN7146GXTMA1 | 2ED2108S06FXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Driver Type | High-side, single-channel | — |
| Number of Drivers | 1 | 1 |
| Logic Type | Non-Inverting | — |
| Input Type | TDI (Truly Differential Inductor) | — |
| Maximum Bootstrap Voltage (VB) | 200 V | — |
| Supply Voltage (VCC) | 4.5 V to 20 V | — |
| Source/Sink Drive Current | 500 mA / 500 mA | — |
| Gate Drive Voltage | Up to 11 V (typ) | — |
| Propagation Delay (typ) | 40 ns | — |
| Rise/Fall Time (typ) | [DATA_NEEDED: rise/fall time] | — |
| UVLO (VCC) | Yes | — |
| UVLO (VB) | Yes | — |
| Bootstrap Diode | Integrated | — |
| Operating Temperature | -40 C to +125 C | -40 C to +125 C |
| Package | PG-VSON-10-4 | PG-DSO-8-53 (DSO-8) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 |
| Driver Configuration | — | Half-Bridge |
| Gate Type | — | N-Channel MOSFET, IGBT |
| Number of Outputs | — | 2 (high-side + low-side) |
| Logic Input | — | Non-Inverting |
| Input Voltage (VCC) | — | 10 V to 20 V |
| High-Side Bootstrap Voltage Rating | — | 650 V |
| Peak Source Current (typ.) | — | 0.29 A |
| Peak Sink Current (typ.) | — | 0.7 A |
| Integrated Bootstrap Diode | — | Yes |
| Undervoltage Lockout (UVLO) | — | Yes (VCC and VB) |
| Propagation Delay (typ.) | — | [DATA_NEEDED: propagation delay ns] |
| Rise / Fall Time (typ.) | — | [DATA_NEEDED: tr/tf ns] |