1EDN7146GXTMA1 vs 2ED2108S06FXUMA1 对比

详细并排对比 1EDN7146GXTMA1 出自 Infineon 和 2ED2108S06FXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
1EDN7146GXTMA1 1EDN7146GXTMA1 - 200V TDI Gate Driver IC | Infineon

1EDN7146GXTMA1 - 200V TDI Gate Driver IC | Infineon

1EDN7146GXTMA1 ✓ 量产中
Infineon
2ED2108S06FXUMA1 2ED2108S06FXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon

2ED2108S06FXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon

2ED2108S06FXUMA1 ✓ 量产中

规格对比

参数 1EDN7146GXTMA1 2ED2108S06FXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.05 $0.30
Driver Type High-side, single-channel —
Number of Drivers 1 1
Logic Type Non-Inverting —
Input Type TDI (Truly Differential Inductor) —
Maximum Bootstrap Voltage (VB) 200 V —
Supply Voltage (VCC) 4.5 V to 20 V —
Source/Sink Drive Current 500 mA / 500 mA —
Gate Drive Voltage Up to 11 V (typ) —
Propagation Delay (typ) 40 ns —
Rise/Fall Time (typ) [DATA_NEEDED: rise/fall time] —
UVLO (VCC) Yes —
UVLO (VB) Yes —
Bootstrap Diode Integrated —
工作温度 -40 C to +125 C -40 C to +125 C
封装 PG-VSON-10-4 PG-DSO-8-53 (DSO-8)
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant Compliant
MSL 等级 1 1
Driver Configuration — Half-Bridge
Gate Type — N-Channel MOSFET, IGBT
输出数量 — 2 (high-side + low-side)
Logic Input — Non-Inverting
Input Voltage (VCC) — 10 V to 20 V
High-Side Bootstrap Voltage Rating — 650 V
Peak Source Current (typ.) — 0.29 A
Peak Sink Current (typ.) — 0.7 A
Integrated Bootstrap Diode — Yes
Undervoltage Lockout (UVLO) — Yes (VCC and VB)
Propagation Delay (typ.) — [DATA_NEEDED: propagation delay ns]
Rise / Fall Time (typ.) — [DATA_NEEDED: tr/tf ns]

数据手册与资源

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