2N7002H6327XTSA2 vs 2N7002LT1G Comparación
Comparación detallada lado a lado de 2N7002H6327XTSA2 por Infineon y 2N7002LT1G por onsemi. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | 2N7002H6327XTSA2 | 2N7002LT1G |
|---|---|---|
| Marca | Infineon | onsemi |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,08 | $0,02 |
| Tipo de transistor | N-Channel MOSFET | — |
| Technology | OptiMOS (Planar) | MOSFET |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) | 300 mA (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| On-State Resistance (RDS(on)) | 3 ohm max @ VGS = 10 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Rango de temperatura de funcionamiento | -55C to +150C (Tj) | [DATA_NEEDED: operating temperature range] |
| Encapsulado | PG-SOT23 (SOT-23-3) | SOT-23-3 (TO-236) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Channel Mode | Enhancement | Enhancement Mode |
| Nivel MSL | 1 (per JEDEC J-STD-020) | — |
| Estado RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Qualification | Industrial / Commercial Grade | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage VDSS | — | 60 V |
| Continuous Drain Current ID | — | 115 mA (Tc) |
| Power Dissipation PD | — | 225 mW (Ta) |
| Maximum RDS(on) | — | 7.5 ohm @ VGS = 5 V |
| Configuration | — | Single FET |
| Número de pines | — | 3 |
| Categoría | — | Small Signal MOSFET |
| Manufacturer | — | onsemi (ON Semiconductor) |
| Lead Finish | — | [DATA_NEEDED: lead finish/plating] |
| Packaging | — | [DATA_NEEDED: packaging type] |